US4591547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual layer positive photoresist process and devices
Assignee: Arris Technology Inc
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Filing: 1984-06-08
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Granted: 1986-05-27
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Expires: 2004-06-08
Abstract
Abstract A method of fabricating a semiconductor device including the steps of forming a first layer of positive photoresist on a substrate surface; exposing selected portions of the photoresist; developing the photoresist to remove those portions which are exposed and leave those portions which are not. Then, plasma etching the substrate and the unexposed resist so that the etch fixes the photoresist. Subsequently forming a second layer of photoresist over the fixed first layer and over the etched substrate. Finally, exposing and developing selected portions of the second layer of photoresist in a pattern which is noncongruent with fixed first photoresist layer. This forms a selective double photoresist layer with the second layer over the fixed first layer, and may also provide single layers of either the first or second photoresist.
Inventors
- 👤 Terry Brownell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:40
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/0035; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
148 words
A method of fabricating a semi-conductor device comprising the steps of: (a) forming a first layer of positive photoresist on a substrate surface; (b) exposing selected portions of said photoresist layer; (c) developing said layer to remove those portions which were exposed, and leaving those other portions which were not exposed; (d) plasma etching said substrate and said unexposed resist so that the plasma etch fixes said unexposed photoresist; (e) forming a second layer of photoresist over said fixed first layer and said etched substrate; and (f) exposing and developing selected portions of said second layer of photoresist being non-congruent with said unexposed fixed left first photoresist; thereby forming a double photoresist layer where said second layer is over said fixed first layer; and wherein in step (b) said photoresist is fully exposed; and wherein said photoresist is overexposed to avoid spewing of said photoresist during step (f).
Claim 2
Independent Claim
148 words
A method of fabricating a semi-conductor device comprising the steps of: (a) forming a first layer of positive photoresist on a substrate surface; (b) exposing selected portions of said photoresist layer; (c) developing said layer to remove those portions which were exposed, and leaving those other portions which were not exposed; (d) plasma etching said substrate and said unexposed resist so that the plasma etch fixes said unexposed photoresist; (e) forming a second layer of photoresist over said fixed first layer and said etched substrate; and (f) exposing and developing selected portions of said second layer of photoresist being non-congruent with said unexposed fixed left first photoresist; thereby forming a double photoresist layer where said second layer is over said fixed first layer; and wherein in step (b) said photoresist is fully exposed; and wherein said photoresist is overexposed to avoid spewing of said photoresist during step (f).
Claim 3
Dependent Claim
34 words
A method according to claim 1 comprising the further step of (g) ion implanting said substrate, said double photoresist layer providing a thick barrier to said implant, and permitting a high energy of implantation.
Claim 4
Dependent Claim
18 words
A method according to claim 2 wherein said implantation is done with an energy greater than 75 Kev.
Claim 5
Dependent Claim
18 words
A method according to claim 1 wherein said plasma has a minimum power of 5 watts/cm 2 .
Claim 6
Dependent Claim
21 words
A method according to claim 1 wherein said plasma is applied in a planar etcher, thereby uniformly fixing said unexposed resist.
Claim 7
Dependent Claim
40 words
A method according to claim 1 further comprising between steps (d) and (e) the further step of heating, said heating be done at a temperature 50° to 100° C. above the normal flow point temperature of the unfixed first photoresist.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-26 | 1989-11-25 | 1990-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-26 | 1993-11-25 | 1994-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-26 | 1997-11-25 | 1998-05-27 | $7700.00 | Window Closed / Lapsed |