US4589097A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile memory circuit having a common write and erase terminal
Assignee: Citizen Watch Co Ltd
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Filing: 1983-03-15
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Granted: 1986-05-13
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Expires: 2003-03-15
Abstract
Abstract A non-volatile memory circuit comprising a plurality of semiconductor non-volatile memory elements, with erasure of data stored in all of these elements, enabling of selective write-in to all of the elements and read-out of stored data being controlled by potentials applied to a single control terminal. Use of a single terminal for these functions, rather than a pair of terminals as in the prior art, makes the circuit highly suitable for ultra-miniature electronic device applications.
Inventors
- 👤 Heihachiro Ebihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:27
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/14; G11C16/16
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
257 words
A non-volatile memory circuit for storing data which is input thereto as a plurality of data signals in parallel form, each data signal varying between a first and a second low potential level, comprising: a plurality of semiconductor non-volatile memory elements each provided with a source electrode, a gate electrode and a drain electrode, with all of said source electrodes of said non-volatile memory elements being connected in common to said first low potential level; a common control terminal coupled to receive a first high potential level when said non-volatile memory circuit is operating in a write-in mode in which said data are stored therein and to receive a second high potential level of opposite polarity to said first high potential level when said non-volatile memory circuit is operating in an erase mode in which said stored data are erased; a plurality of first resistive elements each coupled between said common control terminal and a gate electrode of a corresponding one of said non-volatile memory elements; a plurality of control transistors each provided with a drain electrode which is connected to a corresponding one of said gate electrodes of said non-volatile memory elements, a gate electrode which is coupled to receive a corresponding one of said data signals, and a source electrode; a plurality of second resistive elements each connected between a corresponding one of said drain electrode of said non-volatile memory elements and said second low potential level; and diode means connected between said source electrodes of said control transistors and said second low potential level.
Claim 2
Dependent Claim
257 words
A non-volatile memory circuit for storing data which is input thereto as a plurality of data signals in parallel form, each data signal varying between a first and a second low potential level, comprising: a plurality of semiconductor non-volatile memory elements each provided with a source electrode, a gate electrode and a drain electrode, with all of said source electrodes of said non-volatile memory elements being connected in common to said first low potential level; a common control terminal coupled to receive a first high potential level when said non-volatile memory circuit is operating in a write-in mode in which said data are stored therein and to receive a second high potential level of opposite polarity to said first high potential level when said non-volatile memory circuit is operating in an erase mode in which said stored data are erased; a plurality of first resistive elements each coupled between said common control terminal and a gate electrode of a corresponding one of said non-volatile memory elements; a plurality of control transistors each provided with a drain electrode which is connected to a corresponding one of said gate electrodes of said non-volatile memory elements, a gate electrode which is coupled to receive a corresponding one of said data signals, and a source electrode; a plurality of second resistive elements each connected between a corresponding one of said drain electrode of said non-volatile memory elements and said second low potential level; and diode means connected between said source electrodes of said control transistors and said second low potential level.
Claim 3
Dependent Claim
38 words
A non-volatile memory circuit according to claim 1, in which said diode means comprise a plurality of diodes, each connected between a corresponding one of said source electrodes of said control transistors and said second low potential level.
Claim 4
Dependent Claim
45 words
A non-volatile memory circuit according to claim 1, in which said diode means comprise a single diode having one terminal connected in common to all of said source electrodes of said control transistors and the opposite terminal thereof connected to said second low potential level.
Claim 5
Dependent Claim
68 words
A non-volatile memory circuit according to claim 1, and further comprising a plurality of capacitors, each coupled between a corresponding one of said gate electrodes of said non-volatile memory elements and a common ground potential, each of said capacitors cooperating with a corresponding one of said first resistive elements to form an integrator circuit for eliminating the effects of transient voltage interference appearing on said common control terminal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |