US4589007A
Expired / Lapsed
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Semiconductor integrated circuit device
Assignee: Hitachi Ltd
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Filing: 1983-09-06
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Granted: 1986-05-13
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Expires: 2003-09-06
Abstract
Abstract A semiconductor integrated circuit device is disclosed. A plurality of unit cells, each having at least a basic transistor device formed on one main surface of a semiconductor substrate, are arranged in a line to form a unit cell line. At least two of such unit cell lines are arranged adjacent to and in parallel with each other to form a basic cell line. A plurality of such basic cell lines are arranged in parallel with each other with a wiring region of a predetermined width being interleaved between adjacent basic cell lines.
Inventors
- 👤 Shigeo Kuboki
- 👤 Mitsuhiro Ikeda
- 👤 Akihiko Takano
- 👤 Yoji Nishio
- 👤 Ikuro Masuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 07:03
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/853; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10B; H10B12/00; H10B12/30; H10B12/31; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/0165; H10D84/0193; H10D84/90; H10D84/903; H10D84/907
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
158 words
A semiconductor integrated circuit device utilizing a plurality of unit cells each having at least a basic transistor device formed in one main surface of a substrate, said unit cells being formed into unit cell lines each having a plurality of unit cells arranged in a line in a predetermined direction, said device comprising: a plurality of basic cell lines arranged in parallel to each other on said semiconductor substrate, with a wiring region of a predetermined width being interleaved between adjacent basic cell lines, wherein each of said basic cell lines is formed of at least two of said unit cell lines arranged adjacent to and in parallel to each other, and further wherein each basic cell of said basic cell line is comprised of at least two of said unit cells, wherein the unit cells in adjacent ones of said unit cell lines are offset from one another along the direction of said basic cell line.
Claim 2
Dependent Claim
158 words
A semiconductor integrated circuit device utilizing a plurality of unit cells each having at least a basic transistor device formed in one main surface of a substrate, said unit cells being formed into unit cell lines each having a plurality of unit cells arranged in a line in a predetermined direction, said device comprising: a plurality of basic cell lines arranged in parallel to each other on said semiconductor substrate, with a wiring region of a predetermined width being interleaved between adjacent basic cell lines, wherein each of said basic cell lines is formed of at least two of said unit cell lines arranged adjacent to and in parallel to each other, and further wherein each basic cell of said basic cell line is comprised of at least two of said unit cells, wherein the unit cells in adjacent ones of said unit cell lines are offset from one another along the direction of said basic cell line.
Claim 3
Dependent Claim
145 words
A semiconductor integrated circuit device comprising: a semiconductor substrate having a plurality of first unit cell lines arranged in parallel to each other, said first unit cell lines each having a plurality of first unit cells arranged in a line, said first unit cells each having i first conductivity channel MOS transistors having sources or drains thereof connected in series and i+1 second conductivity channel MOS transistors having sources or drains thereof connected in series, arranged on one main surface of said semiconductor substrate so that the number of second conductivity channel MOS transistors is greater than the number of first conductivity channel MOS transistors in each of said first unit cells; and a plurality of wiring layers stacked on said semiconductor substrate with insulation layers being interposed therebetween, for connecting elements in each of said first unit cells and connecting said first unit cells.
Claim 4
Dependent Claim
145 words
A semiconductor integrated circuit device comprising: a semiconductor substrate having a plurality of first unit cell lines arranged in parallel to each other, said first unit cell lines each having a plurality of first unit cells arranged in a line, said first unit cells each having i first conductivity channel MOS transistors having sources or drains thereof connected in series and i+1 second conductivity channel MOS transistors having sources or drains thereof connected in series, arranged on one main surface of said semiconductor substrate so that the number of second conductivity channel MOS transistors is greater than the number of first conductivity channel MOS transistors in each of said first unit cells; and a plurality of wiring layers stacked on said semiconductor substrate with insulation layers being interposed therebetween, for connecting elements in each of said first unit cells and connecting said first unit cells.
Claim 5
Dependent Claim
104 words
A semiconductor integrated circuit device according to claim 2 wherein said i first conductivity channel MOS transistors and ones of said (i+1) second conductivity channel MOS transistors except the (i+1) th second conductivity channel MOS transistors are arranged so as to make pairs in an opposite positional relation to each other and make the direction of the gate electrodes of the paired transistors correspond to that normal to the first unit cell line, and wherein the size of the second conductivity channel MOS transistor which is not paired with the first conductivity channel MOS transistor is smaller than the sizes of other MOS transistors.
Claim 6
Dependent Claim
101 words
A semiconductor integrated circuit device according to claim 2 wherein said i first conductivity channel MOS transistors and ones of said (i+1) second conductivity channel MOS transistors except the (i+1) th second conductivity channel MOS transistors are arranged so as to make pairs in an opposite positional relation to each other and make the direction of the gate electrode of the paired transistors correspond to that normal to the first unit cell line, and wherein a gate electrode of the second conductivity channel MOS transistor which is not paired with the first conductivity channel MOS transistor is used as an underpath.
Claim 7
Dependent Claim
195 words
A semiconductor integrated circuit device according to claim 2 further comprising a plurality of second unit cell lines arranged in parallel with said first unit cell lines wherein each of said second unit cell lines is composed of unit cells each having i+1 first conductivity channel MOS transistors having sources and drains thereof connected in series and i second conductivity channel MOS transistors having sources or drains thereof connected in series, arranged on one main surface of said semiconductor substrate so that the number of first conductivity channel MOS transistors is greater than the number of second conductivity channel MOS transistors in each of said second unit cells, wherein said second unit cell lines are arranged so that each second unit cell line is directly adjacent to a first unit cell line so that each pair of first and second unit cell lines forms a basic cell line of basic cells each comprised of said first and second unit cells, and further wherein said device comprises a plurality of said basic cell lines spaced apart from one another on said substrate with a wiring region of a predetemined width interleaved between adjacent basic cell lines.
Claim 8
Dependent Claim
41 words
A semiconductor integrated circuit device according to claim 5 wherein the first unit cells and the second cells are arranged within said basic cell line to be offset with relationship to one another along the direction of said basic cell line.
Claim 9
Dependent Claim
47 words
A semiconductor integrated circuit device according to claim 2 wherein in each unit cell either sources or drains of said first conductivity transistors are formed in a common diffused region and either sources or drains of said second conductivity transistors are formed in a common diffused region.
Claim 10
Dependent Claim
36 words
A semiconductor integrated circuit device according to claim 2 wherein the gate electrode of at least the i-th first conductivity channel MOS is separated from the gate electrode of the i-th second conductivity channel MOS transistor.
Claim 11
Dependent Claim
186 words
A semiconductor device having a large number of unit cells on a semiconductor substrate, the unit cells being arranged along rows and columns of the semiconductor substrate, characterized in that each said unit cell is comprised of a first MOS transistor of a first conductivity type, a first MOS transistor of a second conductivity type, a second MOS transistor of said first conductivity type, a second MOS transistor of said second conductivity type, and a third MOS transistor of said second conductivity type so that each unit cell has more transistors of said second conductivity type than of said first conductivity type, wherein the gates of said first MOS transistors of said first and second conductivity types are commonly connected to each other and wherein the gates of said second MOS transistors of said first and second conductivity types are not commonly connected to each other, and interconnecting lines being distributed on the semiconductor substrate, said interconnecting lines being selectively distributed adjacent to the unit cells so that a variety of functional circuits can be obtained by suitably utilizing one or more of the unit cells.
Claim 12
Dependent Claim
186 words
A semiconductor device having a large number of unit cells on a semiconductor substrate, the unit cells being arranged along rows and columns of the semiconductor substrate, characterized in that each said unit cell is comprised of a first MOS transistor of a first conductivity type, a first MOS transistor of a second conductivity type, a second MOS transistor of said first conductivity type, a second MOS transistor of said second conductivity type, and a third MOS transistor of said second conductivity type so that each unit cell has more transistors of said second conductivity type than of said first conductivity type, wherein the gates of said first MOS transistors of said first and second conductivity types are commonly connected to each other and wherein the gates of said second MOS transistors of said first and second conductivity types are not commonly connected to each other, and interconnecting lines being distributed on the semiconductor substrate, said interconnecting lines being selectively distributed adjacent to the unit cells so that a variety of functional circuits can be obtained by suitably utilizing one or more of the unit cells.
Claim 13
Dependent Claim
51 words
A semiconductor integrated circuit device according to claim 2 wherein said first unit cells are arranged such that sub-cells defined by evenly dividing said first unit cells by a line normal to said first unit cell lines are line symmetric with respect to the direction of said first unit cell lines.
Claim 14
Dependent Claim
52 words
A semiconductor integrated circuit device according to claim 2 wherein said first unit cells are arranged such that sub-cells defined by evenly dividing said first unit cells by a line normal to said first unit cell lines are line symmetric with respect to the direction normal to said first unit cell lines.
Claim 15
Dependent Claim
51 words
A semiconductor integrated circuit device according to claim 5 wherein said second unit cells are arranged such that sub-cells defined by evenly dividing said second unit cells by a line normal to said second unit cell lines are line symmetric with respect to the direction of said second unit cell lines.
Claim 16
Dependent Claim
52 words
A semiconductor integrated circuit device according to claim 5 wherein said second unit cells are arranged such that sub-cells defined by evenly dividing said second unit cells by a line normal to said second unit cell lines are line symmetric with respect to the direction normal to said second unit cell lines.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-12 | 1989-11-11 | 1990-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-12 | 1993-11-11 | 1994-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-12 | 1997-11-11 | 1998-05-13 | $7700.00 | Window Closed / Lapsed |