Method of forming an electrically conductive member

Claim 2

An improved method of applying an electrically conductive metallic material in a preselected pattern directly onto a substantially transparent, electrically conductive layer of an electronic device; the method including the steps of: selecting said substantially transparent, electrically conductive layer from layers formed from materials consisting essentially of: tin oxide, indium oxide, zinc oxide and combinations thereof; cleaning the substantially transparent, electrically conductive layer; immersing the substantially transparent, electrically conductive layer in an electroplating bath; providing a counter electrode in the electroplating bath; providing a source of direct current; establishing electrical communication between (a) a first terminal of the source of direct current and the substantially transparent, electrically conductive layer and (b) a second terminal of the source of direct current and the counter electrode; activating the source of direct current, and electroplating the metallic material onto the substantially transparent, electrically conductive layer.

Claim 3

A method as in claim 1 wherein the step of establishing electrical communication includes the further step of: establishing electrical contact from a first terminal of the source of direct current directly to the transparent conductive layer.

Claim 4

A method as in claim 1 further comprising the step of: providing a plating resist layer atop preselected areas of the transparent electrically conductive layer, prior to the electroplating thereof, said preselected areas corresponding to portions of the transparent layer which will not have the conductive pattern thereon, whereby said conductive pattern is only formed upon the transparent electrically conductive layer.

Claim 5

A method as in claim 1, further comprising the steps of: providing an etch resist layer atop preselected areas of the electrically conductive metallic material, after said material is electroplated onto the transparent electrically conductive layer; the preselected areas corresponding to said preselected pattern of electrically conductive metallic material; and etching the electrically conductive metallic material not covered by the resist layer, whereby said preselected pattern is formed upon the transparent electrically conductive layer.

Claim 6

A method as in claim 1, further comprising the step of: selecting the electrically conductive metallic material from the group consisting essentially of: copper, nickel, silver, gold, aluminum, chromium and mixtures thereof.

Claim 7

A method as in claim 1 wherein the step of electroplating the electrically conductive metallic material includes the further step of electroplating a layer of nickel.

Claim 8

A method as in claim 1 wherein said electronic device is a liquid crystal display.

Claim 9

A method as in claim 1 wherein the electronic device is formed upon an elongated web of material, and wherein the step of electroplating includes the step of: continuously advancing the web of material through a plating station, said plating station adapted to continuously electroplate the electrically conductive metallic material onto the transparent electrically conductive layer.

Claim 10

A method as in claim 1 wherein the step of electroplating the electrically conductive metallic material includes the further steps of: electroplating a layer of nickel; and electroplating a layer of copper, the two electroplated layers being substantially co-extensive.

Claim 11

A method as in claim 1 wherein said electronic device is a photodetector.

Claim 12

A method as in claim 1 wherein said electronic device is a photoconductive device.

Claim 13

A method as in claim 1 wherein said electronic device is a photovoltaic device.

Claim 14

An improved method of applying an electrically conductive metallic material in a preselected pattern directly onto the substantially transparent electrically conductive layer of a photovoltaic device which comprises: a first electrode; an active semiconductor body including an amorphous silicon alloy, said body having a first surface which is disposed in electrical communication with the first electrode, the semiconductor body adapted to provide for the flow of electrical current in response to the absorption of light incident thereon; a second electrode formed of a layer of substantially transparent electrically conductive material, a first surface of the second electrode disposed in electrical communication with a second surface of the semiconductor body; and an electrically conductive metallic pattern formed from a layer of electrically conductive metallic material disposed in electrical contact with the second surface of the second electrode; the method including the steps of: selecting said substantially transparent, electrically conductive layer of material from the group consisting essentially of: tin oxide, indium oxide, zinc oxide, and combinations thereof; cleaning the substantially transparent, electrically conductive layer; immersing the substantially transparent, electrically conductive layer in an electroplating bath; providing a counter electrode in the electroplating bath; providing a source of direct current; establishing electrical communication between (a) a first terminal of the source of direct current and the substantially transparent electrically conductive layer and (b) a second terminal of the source of direct current and the counter electrode; activating the source of direct current, and electroplating the metallic material onto the substantially transparent, electrically conductive layer.

Claim 15

An improved method of applying an electrically conductive metallic material in a preselected pattern directly onto the substantially transparent electrically conductive layer of a photovoltaic device which comprises: a first electrode; an active semiconductor body including an amorphous silicon alloy, said body having a first surface which is disposed in electrical communication with the first electrode, the semiconductor body adapted to provide for the flow of electrical current in response to the absorption of light incident thereon; a second electrode formed of a layer of substantially transparent electrically conductive material, a first surface of the second electrode disposed in electrical communication with a second surface of the semiconductor body; and an electrically conductive metallic pattern formed from a layer of electrically conductive metallic material disposed in electrical contact with the second surface of the second electrode; the method including the steps of: selecting said substantially transparent, electrically conductive layer of material from the group consisting essentially of: tin oxide, indium oxide, zinc oxide, and combinations thereof; cleaning the substantially transparent, electrically conductive layer; immersing the substantially transparent, electrically conductive layer in an electroplating bath; providing a counter electrode in the electroplating bath; providing a source of direct current; establishing electrical communication between (a) a first terminal of the source of direct current and the substantially transparent electrically conductive layer and (b) a second terminal of the source of direct current and the counter electrode; activating the source of direct current, and electroplating the metallic material onto the substantially transparent, electrically conductive layer.

Claim 16

A method as in claim 13 further including the step of electroplating the electrically conductive material onto the first electrode.

Claim 17

A method as in claim 13 wherein the step of establishing electrical communication includes the further step of: establishing electrical contact from a first terminal of the source of direct current directly to the transparent conductive layer.

Claim 18

A method as in claim 13 futher comprising the step of: providing a plating resist layer atop preselected areas of the second electrode prior to the electroplating of the second electrode; said preselected areas corresponding to portions of the second electrode which will not have the conductive pattern thereon, whereby said electrically conductive pattern is only formed upon the second electrode.

Claim 19

A method as in claim 13, further comprising the step of: providing an etch resist layer atop preselected areas of the metallic material, after the material is electroplated onto the second electrode, said preselected areas corresponding to said electrically conductive metallic pattern; and etching the electrically conductive metallic material not covered by the resist layer, whereby said electrically conductive metallic pattern is formed upon the second electrode.

Claim 20

A method as in claim 13 further comprising the step of: selecting the electrically conductive metallic material from the group consisting essentially of: copper, nickel, silver, gold, aluminum, chromium and mixtures thereof.

Claim 21

A method as in claim 13 wherein the step of electroplating the electrically conductive metallic material comprises electroplating a layer of nickel.

Claim 22

A method as in claim 13, wherein the step of electroplating the electrically conductive metallic material comprises electroplating a layer of copper.

Claim 23

A method as in claim 13, wherein the step of electroplating the electrically conductive metallic material includes: electroplating a layer of nickel; and electroplating a layer of copper, the two electroplated layers being substantially co-extensive.

Claim 24

A method as in claim 13 wherein the photovoltaic device is formed upon an elongated web of material, and wherein the step of electroplating includes the step of: continuously advancing the web of material through a plating station, said plating station adapted to continuously electroplate the electrically conductive metallic material onto the second electrode.