US4586168A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual port memory sense amplifier isolation
Assignee: Motorola Solutions Inc
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Filing: 1983-12-12
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Granted: 1986-04-29
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Expires: 2003-12-12
Abstract
Abstract A dual port memory has been provided which allows read and write operations by separate data processors during a read cycle of one of the processors. A method of accomplishing this is provided by shortening the column drive signal to disconnect the column line from the sense amplifier once the sense amplifier has latched the data being read. Write circuitry can then be enabled to write into the memory cell which has just been read by the sense amplifier.
Inventors
- 👤 Richard H. Adlhoch
- 👤 James Ward
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:36
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/06; G11C7/065; G11C8/00; G11C8/16
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
113 words
A memory having dual read and write capability, comprising: a storage cell having a true signal line and a complement signal line coupled thereto; first means for controllably coupling the true and complement signal lines from the storage cell to bit sense lines; a sense amplifier for receiving data from the bit sense lines and temporarily latching the data therein; second means for controllably coupling the bit sense lines to the sense amplifier; third means for controllably coupling the true and complement signal lines from the storage cell to access lines; circuitry for writing data into the storage cell; and fourth means for controllably coupling the access lines to the circuitry for writing.
Claim 2
Dependent Claim
113 words
A memory having dual read and write capability, comprising: a storage cell having a true signal line and a complement signal line coupled thereto; first means for controllably coupling the true and complement signal lines from the storage cell to bit sense lines; a sense amplifier for receiving data from the bit sense lines and temporarily latching the data therein; second means for controllably coupling the bit sense lines to the sense amplifier; third means for controllably coupling the true and complement signal lines from the storage cell to access lines; circuitry for writing data into the storage cell; and fourth means for controllably coupling the access lines to the circuitry for writing.
Claim 3
Dependent Claim
56 words
The memory of claim 1 wherein the first and third means are separate row select switches and each of the first and third means is controlled by separate control signals, and wherein the second and fourth means are separate column select switches and each of the second and fourth means are controlled by separate control signals.
Claim 4
Dependent Claim
17 words
The memory of claim 2 wherein the row select switches and the column select switches are transistors.
Claim 5
Dependent Claim
24 words
The memory of claim 2 wherein the circuitry for writing is some write logic which receives data to be stored in the storage cell.
Claim 6
Independent Claim
107 words
A method of accessing a storage cell within a memory wherein the storage cell has dual read and write capability, comprising: commencing a read cycle and enabling a first row line coupled to the storage cell and a first column line coupled to the storage cell; enabling a sense amplifier coupled to the first column line; latching data from the storage cell in the sense amplifier; disabling the first column line before the end of the read cycle; enabling a second row line and a second column; and writing data into the storage cell thereby reading and writing data in the storage cell during a single cycle.
Claim 7
Independent Claim
107 words
A method of accessing a storage cell within a memory wherein the storage cell has dual read and write capability, comprising: commencing a read cycle and enabling a first row line coupled to the storage cell and a first column line coupled to the storage cell; enabling a sense amplifier coupled to the first column line; latching data from the storage cell in the sense amplifier; disabling the first column line before the end of the read cycle; enabling a second row line and a second column; and writing data into the storage cell thereby reading and writing data in the storage cell during a single cycle.
Claim 8
Dependent Claim
34 words
The method of claim 5 wherein enabling a first column line enables a true and a complement data line, and enabling a second column line includes enabling a true and a complement data line.
Claim 9
Dependent Claim
98 words
A memory system having a dual port storage cell comprising: a storage cell having first and second access lines; first row select means for coupling the first access lines to first bit lines; second row select means for coupling the second access lines to second bit lines; a first sense amplifier and write circuitry; a second sense amplifier and write circuitry; first column select means for coupling the first bit lines to the first sense amplifier and write circuitry; and second column select means for coupling the second bit lines to the second sense amplifier and write circuitry.
Claim 10
Dependent Claim
98 words
A memory system having a dual port storage cell comprising: a storage cell having first and second access lines; first row select means for coupling the first access lines to first bit lines; second row select means for coupling the second access lines to second bit lines; a first sense amplifier and write circuitry; a second sense amplifier and write circuitry; first column select means for coupling the first bit lines to the first sense amplifier and write circuitry; and second column select means for coupling the second bit lines to the second sense amplifier and write circuitry.
Claim 11
Dependent Claim
140 words
A dual port memory having capability of read and write operations by separate data processors during a read cycle of one of the data processors, comprising: a dual port memory cell; a first sense amplifier and a first write circuit both cooperatively coupled to one set of column lines of the dual port memory cell; first controllable means for coupling the dual port memory cell to the first sense amplifier and the first write circuit; a second sense amplifier and a second write circuit both cooperatively coupled to a second set of column lines of the dual port memory cell; second controllable means for coupling the dual port memory cell to the second sense amplifier and the second write circuit wherein the second controllable means can be enabled during the same read cycle that the first controllable means is enabled.
Claim 12
Dependent Claim
140 words
A dual port memory having capability of read and write operations by separate data processors during a read cycle of one of the data processors, comprising: a dual port memory cell; a first sense amplifier and a first write circuit both cooperatively coupled to one set of column lines of the dual port memory cell; first controllable means for coupling the dual port memory cell to the first sense amplifier and the first write circuit; a second sense amplifier and a second write circuit both cooperatively coupled to a second set of column lines of the dual port memory cell; second controllable means for coupling the dual port memory cell to the second sense amplifier and the second write circuit wherein the second controllable means can be enabled during the same read cycle that the first controllable means is enabled.
References Cited (Backward Citations)
US4165540A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-28 | 1989-10-28 | 1990-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-28 | 1993-10-28 | 1994-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-28 | 1997-10-28 | 1998-04-29 | $7700.00 | Window Closed / Lapsed |