US4586066A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Avalanche photodetector
Assignee: RCA Inc
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Filing: 1984-09-14
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Granted: 1986-04-29
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Expires: 2004-09-14
Abstract
Abstract The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a central zone which is thicker than a surrounding peripheral zone and a second region overlying the first region. The avalanche region is then restricted to the thicker central zone of the first region.
Inventors
- 👤 Robert J. McIntyre
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:33
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1243; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; H10F77/1248; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
85 words
An avalanche photodetector comprising: a substrate of first conductivity type having a first major surface; a light-absorptive region of first conductivity type overlying said first major surface; a first region of first conductivity type overlying said absorptive region and having a central zone and a surrounding peripheral zone wherein said central zone is thicker than said peripheral zone; a second region of opposite conductivity type overlying said first region; a first electrical contact to said second region; and a second electrical contact to said substrate.
Claim 2
Dependent Claim
85 words
An avalanche photodetector comprising: a substrate of first conductivity type having a first major surface; a light-absorptive region of first conductivity type overlying said first major surface; a first region of first conductivity type overlying said absorptive region and having a central zone and a surrounding peripheral zone wherein said central zone is thicker than said peripheral zone; a second region of opposite conductivity type overlying said first region; a first electrical contact to said second region; and a second electrical contact to said substrate.
Claim 3
Dependent Claim
26 words
The photodetector of claim 1 wherein said areal concentration of conductivity modifiers in the central zone is between about 2.5 and 4×10 12 /cm 2 .
Claim 4
Dependent Claim
33 words
The photodetector of claim 2 wherein said central zone is between about 0.6 and 4 micrometers thick and said peripheral zone is less than about 0.6 times the thickness of said central zone.
Claim 5
Dependent Claim
16 words
The photodetector of claim 3 further comprising a buffer region between said absorptive and first regions.
Claim 6
Dependent Claim
58 words
The photodetector of claim 3 wherein said first region is composed of N-type InP, said second region is composed of P-type InP and said light-absorptive region has ν-type conductivity and is composed of a material selected from a group consisting of In 0 .57 Ga 0 .43 As and In x Ga 1-x As y P 1-y alloys.
References Cited (Backward Citations)
US4116733A
Cited
EP0043734A2
Cited
US4442444A
Cited
US4481523A
Cited
US4471370A
Cited
US4473835A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-28 | 1989-10-28 | 1990-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-28 | 1993-10-28 | 1994-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-28 | 1997-10-28 | 1998-04-29 | $7700.00 | Window Closed / Lapsed |