US4585537A
Expired / Lapsed
US
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Process for producing continuous insulated metallic substrate
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1984-12-03
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Granted: 1986-04-29
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Expires: 2004-12-03
Abstract
Abstract A process for producing a continuous web of an insulated metallic substrate, comprising the steps of depositing an insulation layer on a continuous web of a metallic substrate by plasma CVD method or sputtering method, and depositing a back electrode on the insulation layer by sputtering method or vapor deposition method. According to the present invention, the insulated metallic substrate for a solar cell or printed circuit board can be produced in a continuous manner and in high productivity and quality.
Inventors
- 👤 Takehisa Nakayama
- 👤 Kunio Nishimura
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:46
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/02; C23C16/00; C23C16/44; C23C16/54; C23C16/545; C23C14/021; C23C14/22; C23C14/56; C23C14/562; C23C16/02; C23C16/0227; H; H10; H10F; H10F71/00; H10F71/10; H10F71/107; H10F71/137; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/05; H05K1/053; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
77 words
A process for producing a continuous web of an insulated metallic substrate, which comprises depositing an insulation layer of a non-monocrystalline material containing Si on a surface of a continuous web of a metallic substrate by a plasma CVD method using parallel plate electrodes, and without exposing the metallic substrate having the insulation layer thereon to atmospheric conditions successively depositing a back electrode directly on the insulation layer by a sputtering method or a vapor deposition method.
Claim 2
Dependent Claim
77 words
A process for producing a continuous web of an insulated metallic substrate, which comprises depositing an insulation layer of a non-monocrystalline material containing Si on a surface of a continuous web of a metallic substrate by a plasma CVD method using parallel plate electrodes, and without exposing the metallic substrate having the insulation layer thereon to atmospheric conditions successively depositing a back electrode directly on the insulation layer by a sputtering method or a vapor deposition method.
Claim 3
Dependent Claim
28 words
The process of claim 1, wherein said metallic substrate is made of iron, aluminum, nickel, copper, zinc, and an alloy thereof, stainless steel, brass or a surface-treated metal.
Claim 4
Dependent Claim
25 words
The process of claim 1, wherein said insulation layer contains at least one element selected from the group consisting of C, O, N and Ge.
Claim 5
Dependent Claim
20 words
The process of claim 1, wherein said insulation layer has a carbon content of not less than 10% by atom.
Claim 6
Dependent Claim
13 words
The process of claim 1, wherein said insulation layer is an amorphous material.
Claim 7
Dependent Claim
70 words
The process of claim 5, wherein said insulation layer is Si:H, Si.sub.(1-x) C x :H (wherein x is 0.1 to 0.9), Si.sub.(1-x) N:H(wherein X is as difined above), Si.sub.(1-x)O x :H (wherein x is as defined above), Si.sub.(1-x-y)C x N y :H (wherein x is as defined above, y is 0 to 0.9, and x+y≦1) or Si.sub.(1-x-y) C x O y :H (wherein x and y are as defined above).
Claim 8
Dependent Claim
40 words
The process of claim 1, wherein said back electrode is a monolayer or a multiple layer of aluminum, chromium, nickel, molybdenum, copper, zinc, silver, tin, an alloy thereof, a metal oxide thereof, a titanium silver alloy, nichrome, SUS or ITO.
Claim 9
Dependent Claim
19 words
The process of claim 1, wherein said continuous web of the metallic substrate is a hoop material in roll.
Claim 10
Dependent Claim
14 words
The process of claim 1, wherein the surface of said metallic substrate is polished.
Claim 11
Dependent Claim
17 words
The process of claim 9, wherein the surface roughness of said substrate is R max ≦0.5 μm.
Claim 12
Dependent Claim
17 words
The process of claim 9, wherein the surface roughness of said substrate is R max ≦0.2 μm.
Claim 13
Dependent Claim
35 words
The process of claim 1, wherein said plasma CVD method is a parallel plate electrode method using an electrode having a magnet arranged so that a magnetic field component is parallel to the electrode plate.
Claim 14
Dependent Claim
24 words
The process of claim 12, wherein the deposition of said insulation layer is carried out at a substrate temperature of 100° to 400° C.
Claim 15
Dependent Claim
18 words
The process of claim 1, wherein the back electrode is deposited in a pattern by using a mask.
Claim 16
Dependent Claim
26 words
The process of claim 14, wherein the deposition of the back electrode is carried out at a substrate temperature of from room temperature to 400° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-28 | 1989-10-28 | 1990-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-28 | 1993-10-28 | 1994-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-28 | 1997-10-28 | 1998-04-29 | $7700.00 | Window Closed / Lapsed |