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US4584431A Expired / Lapsed US ⏱️ 0.0 years remaining

High voltage RF coaxial cable

Assignee: United States Department of the Air Force
•
Filing: 1984-10-11
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Granted: 1986-04-22
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Expires: 2004-10-11
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Abstract

Abstract A high voltage coaxial cable wherein a corona-free configuration is produced by applying a room temperature-curable silicone elastomeric material under pressure to the outer surface of the cable braid so that the material is forced between the voids of the braid and adheres to the primary insulation material at the insulation/braid interface.

Inventors

  • 👤 Robert J. Tippie
  • 👤 Anthony T. Nasuta, Jr.

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 12:02
CPC Classifications
H; H01; H01B; H01B11/00; H01B11/18; H01B11/1808; H01B11/1813; Y; Y10; Y10T; Y10T428/00; Y10T428/29; Y10T428/2913; Y10T428/2933; Y10T428/2936; Y10T428/2962

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 65 words
A high voltage coaxial cable comprising: a center conductor; a layer of semiconductor material surrounding said center conductor; a primary insulation material surrounding said semiconductor material; a braided metallic shield surrounding said primary insulation material; and a room temperature-curable silicone elastomeric material applied to said braided metallic shield and filling the voids at the interface of said primary insulation material and said braided metallic shield.
Claim 2
Dependent Claim 65 words
A high voltage coaxial cable comprising: a center conductor; a layer of semiconductor material surrounding said center conductor; a primary insulation material surrounding said semiconductor material; a braided metallic shield surrounding said primary insulation material; and a room temperature-curable silicone elastomeric material applied to said braided metallic shield and filling the voids at the interface of said primary insulation material and said braided metallic shield.
Claim 3
Dependent Claim 32 words
A high voltage coaxial cable as defined in claim 1 wherein said layer of semiconductor material comprises a tape wound about said center conductor and having particles of semiconductor material embedded therein.
Claim 4
Dependent Claim 29 words
A high voltage coaxial cable as defined in claim 1 wherein said layer of semiconductor material is a carbon-containing polymeric material extruded on the surface of said center conductor.
Claim 5
Dependent Claim 26 words
A high voltage coaxial cable as defined in claim 3 wherein said primary insulation material is extruded on the surface of said layer of semiconductor material.
Claim 6
Dependent Claim 21 words
A high voltage caoxial cable as defined in claim 4 wherein said center conductor comprises a plurality of electrical conductor strands.
Claim 7
Independent Claim 77 words
A method of forming a high voltage coaxial cable comprising the steps of: (a) forming a layer of a semiconductor material over a center conductor; (b) forming a primary insulation material over said semiconductor material; (c) braiding a metallic shield over said primary insulation material; and (d) applying a room temperature-curable silicone elastomeric material to said metallic shield with a sufficient pressure to provide a substantially void-free interface of said primary insulation material and said metallic shield.
Claim 8
Independent Claim 77 words
A method of forming a high voltage coaxial cable comprising the steps of: (a) forming a layer of a semiconductor material over a center conductor; (b) forming a primary insulation material over said semiconductor material; (c) braiding a metallic shield over said primary insulation material; and (d) applying a room temperature-curable silicone elastomeric material to said metallic shield with a sufficient pressure to provide a substantially void-free interface of said primary insulation material and said metallic shield.
Claim 9
Dependent Claim 19 words
A method in accordance with claim 5 wherein said pressure is between 5 and 10 pounds per square inch.
Claim 10
Dependent Claim 40 words
A method in accordance with claim 7 wherein in step (a) said semiconductor material is extruded over the surface of said center conductor and in step (b) said primary insulation material is extruded over the surface of said semiconductor material.

References Cited (Backward Citations)

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US3098893A Cited
US3236939A Cited
US3187071A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-04-21 1989-10-21 1990-04-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-04-21 1993-10-21 1994-04-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-04-21 1997-10-21 1998-04-22 $7700.00 Window Closed / Lapsed

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