Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
227 words
A method of making a charge-coupled device comprising forming a first masking layer on a surface of a substrate of single crystalline silicon of one conductivity type, coating the first masking layer with a second masking layer, forming openings in the second masking layer over areas of the substrate surface where blooming drains are to be formed, removing the areas of the first masking layer exposed by the openings in the second masking layer to form openings in the first masking layer to the substrate surface, embedding a conductivity modifier of the type opposite to that of the substrate into the substrate through the openings in the first and second masking layers to form blooming drains in the substrate, removing the second masking layer, embedding a conductivity modifier of the same type as the substrate through the openings in the first masking layer and through portions of the first masking layer adjacent the edges of the openings to form regions of the one conductivity type in the substrate around each of the blooming drains, removing the first masking layer, and embedding a conductivity modifier of the type opposite to that of the substrate into the substrate surface to form channels between the blooming drain and to compensate the portion of the one conductivity type regions at each side of the blooming drains to form channel stop regions.
Claim 2
Independent Claim
227 words
A method of making a charge-coupled device comprising forming a first masking layer on a surface of a substrate of single crystalline silicon of one conductivity type, coating the first masking layer with a second masking layer, forming openings in the second masking layer over areas of the substrate surface where blooming drains are to be formed, removing the areas of the first masking layer exposed by the openings in the second masking layer to form openings in the first masking layer to the substrate surface, embedding a conductivity modifier of the type opposite to that of the substrate into the substrate through the openings in the first and second masking layers to form blooming drains in the substrate, removing the second masking layer, embedding a conductivity modifier of the same type as the substrate through the openings in the first masking layer and through portions of the first masking layer adjacent the edges of the openings to form regions of the one conductivity type in the substrate around each of the blooming drains, removing the first masking layer, and embedding a conductivity modifier of the type opposite to that of the substrate into the substrate surface to form channels between the blooming drain and to compensate the portion of the one conductivity type regions at each side of the blooming drains to form channel stop regions.
Claim 3
Dependent Claim
54 words
A method in accordance with claim 1 in which the areas of the first masking layer are removed so as to provide openings having side walls which taper back from the substrate surface under the second masking layer so that the first masking layer has thinner portions adjacent the exposed surface of the substrate.
Claim 4
Dependent Claim
29 words
A method in accordance with claim 2 in which the first masking layer is of silicon oxide and the areas of the first masking layer are removed by etching.
Claim 5
Dependent Claim
28 words
A method in accordance with claim 3 in which the second masking layer is a photoresist material and the openings are photolithographically formed in the second masking layer.
Claim 6
Dependent Claim
66 words
A method in accordance with claim 2 in which the conductivity modifiers of the same type as the substrate are embedded into the substrate through the openings in the first masking layer by ion implantation with some of the ions passing through the thinner portions of the first masking layer to form the poritons of the one conductivity type at each side of the blooming drains.
Claim 7
Dependent Claim
40 words
A method in accordance with claim 5 in which the ions are implanted into the substrate in a manner to pass through the blooming drains to form portions of the regions of the one conductivity type under the blooming drains.