US4576691A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching optical surfaces on GaAs
Assignee: Nokia Bell Labs
•
Filing: 1984-07-31
•
Granted: 1986-03-18
•
Expires: 2004-07-31
Abstract
Abstract Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is available to produce holes in the valence band.
Inventors
- 👤 Paul A. Kohl
- 👤 Lawrence E. Smith
- 👤 Harvey S. Trop
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:16
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/617; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; C25F3/14
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
167 words
A process for fabricating an optical device comprising at least one n-type or intrinsic compound semiconductor consisting of at least 95 mole percent gallium arsenide comprising the step of etching at least part of the compound semiconductor to produce a compound semiconductor surface of optical quality characterized in that the etching procedure is an electrochemical photoetching procedure in which electric current is passed through the compound semiconductor, electrolytic solution with conductivity greater than 0.0001 mhos/cm and anode in which the electrochemical photoetching procedure further comprises a. applying a potential to the semiconducting compound which is between the maximum potential of the valence band of the semiconductor compound in the electrolytic solution and the minimum potential of the conduction band of the semiconductor compound in the electrolytic solution; b. illuminating the part of the surface of the compound semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band; and c. the electrolytic solution comprises aqueous alkaline solution with pH greater than 11.
Claim 2
Dependent Claim
167 words
A process for fabricating an optical device comprising at least one n-type or intrinsic compound semiconductor consisting of at least 95 mole percent gallium arsenide comprising the step of etching at least part of the compound semiconductor to produce a compound semiconductor surface of optical quality characterized in that the etching procedure is an electrochemical photoetching procedure in which electric current is passed through the compound semiconductor, electrolytic solution with conductivity greater than 0.0001 mhos/cm and anode in which the electrochemical photoetching procedure further comprises a. applying a potential to the semiconducting compound which is between the maximum potential of the valence band of the semiconductor compound in the electrolytic solution and the minimum potential of the conduction band of the semiconductor compound in the electrolytic solution; b. illuminating the part of the surface of the compound semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band; and c. the electrolytic solution comprises aqueous alkaline solution with pH greater than 11.
Claim 3
Dependent Claim
16 words
The process of claim 1 in which the compound semiconductor consists essentially of n-type gallium arsenide.
Claim 4
Dependent Claim
13 words
The process of claim 1 in which the pH is greater than 12.
Claim 5
Dependent Claim
13 words
The process of claim 3 in which the pH is greater than 13.
Claim 6
Dependent Claim
21 words
The process of claim 4 in which the electrolytic solution comprises KOH in the concentration range from 0.1 to 2±0.2 molar.
Claim 7
Dependent Claim
30 words
The process of claim 1 in which the roughness of the compound semiconductor surface of optical quality is less than about one quarter of a wavelength inside the compound semiconductor.
Claim 8
Dependent Claim
16 words
The process of claim 1 in which the radiation wavelength is greater than about 700 nm.
Claim 9
Dependent Claim
19 words
The process of claim 1 in which the potential is between -0.2 and 1.0 volts on the SCE scale.
Claim 10
Dependent Claim
19 words
The process of claim 8 in which the potential is between -0.2 and 0.7 volts on the SCE scale.
Claim 11
Dependent Claim
13 words
The process of claim 1 in which the device is a light-emitting diode.
Claim 12
Dependent Claim
9 words
A device produced by the process of claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-03-17 | 1989-09-16 | 1990-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-03-17 | 1993-09-16 | 1994-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-03-17 | 1997-09-16 | 1998-03-18 | $7700.00 | Window Closed / Lapsed |