US4575466A
Expired / Lapsed
US
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Treatment process for semiconductor wafer
Assignee: Toshiba Corp
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Filing: 1983-12-28
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Granted: 1986-03-11
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Expires: 2003-12-28
Abstract
Abstract A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5×10 16 cm -3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order to form small defects therein and out diffuse the impurities, respectively. Thereby, a region including no small defects is formed in a surface region of the semiconductor wafer and another region including many defects is formed in an internal region of the semiconductor wafer.
Inventors
- 👤 Hiroshi Iwai
- 👤 Hideo Ohtsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:55
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/024
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
79 words
A treatment process for a semiconductor wafer, comprising: preparing a semiconductor body having one region including impurities at a concentration more than 5×10 16 cm -3 therein; at least a first radiating step including radiating an energy beam on at least one portion of the one region; and forming a first region including no small defects in a surface region of the one portion and a second region including many defects in an internal region of the one portion.
Claim 2
Dependent Claim
79 words
A treatment process for a semiconductor wafer, comprising: preparing a semiconductor body having one region including impurities at a concentration more than 5×10 16 cm -3 therein; at least a first radiating step including radiating an energy beam on at least one portion of the one region; and forming a first region including no small defects in a surface region of the one portion and a second region including many defects in an internal region of the one portion.
Claim 3
Dependent Claim
25 words
A treatment process for a semiconductor wafer according to claim 1, wherein the impurities are selected from the group consisting of oxygen, carbon and nitrogen.
Claim 4
Dependent Claim
19 words
A treatment process for a semiconductor wafer according to claim 1, wherein the semiconductor body comprises: single crystalline silicon.
Claim 5
Dependent Claim
20 words
A treatment process for a semiconductor wafer according to claim 1, comprising: forming said semiconductor body on an insulating substrate.
Claim 6
Dependent Claim
20 words
A treatment process for a semiconductor wafer according to claim 1, wherein the radiating step comprises radiating a laser beam.
Claim 7
Dependent Claim
20 words
A treatment process for a semiconductor wafer according to claim 1, wherein the radiating step comprises radiating an electron beam.
Claim 8
Dependent Claim
36 words
A treatment process for a semiconductor wafer according to claim 1, further comprising: a second radiating step including radiating an energy beam having different power levels than the radiation beam used in said first radiating step.
Claim 9
Dependent Claim
24 words
A treatment process for a semiconductor wafer according to claim 1, wherein a heating step is performed in a furnace before the radiating step.
Claim 10
Dependent Claim
21 words
A treatment process for a semiconductor wafer according to claim 1, wherein a heating step is performed after the radiating step.
Claim 11
Dependent Claim
33 words
A treatment process for a semiconductor wafer according to claim 1, further comprising: controlling the size and density of the defects by heating the semiconductor wafer after forming the first and second regions.
Claim 12
Dependent Claim
26 words
A treatment process for a semiconductor wafer according to claim 1, wherein the impurities have a concentration between 5×10 17 and 1.5×10 18 cm -3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-03-10 | 1989-09-09 | 1990-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-03-10 | 1993-09-09 | 1994-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-03-10 | 1997-09-09 | 1998-03-11 | $7700.00 | Window Closed / Lapsed |