US4569700A
Expired / Lapsed
US
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Method of manufacturing a stacked semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-07-01
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Granted: 1986-02-11
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Expires: 2005-07-01
Abstract
Abstract The invention provides a stacked semiconductor device having a plurality of monocrystalline semiconductor films of the same material which are formed on a monocrystalline semiconductor substrate and between which insulating films are sandwiched wherein the semiconductor device comprises at least one connecting region, and wherein the semiconductor substrate and the semiconductor films are vertically connected at the one connecting region.
Inventors
- 👤 Masaharu Toyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:37
CPC Classifications
H; H10; H10D; H10D88/00; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
103 words
A method for manufacturing a stacked semiconductor device, comprising: forming a first non-mono-crystalline semiconductor film on a monocrystalline semiconductor substrate through a first insulating film; converting said first non-mono-crystalline semiconductor film into a first monocrystalline semiconductor film; forming a second non-mono-crystalline semiconductor film on said first monocrystalline semiconductor film through a second insulating film; and converting said second non-mono-crystalline semiconductor film into a second monocrystalline film, wherein the conversion into the monocrystalline semiconductor film is performed by using as a seed crystal at least one connecting region at which said semiconductor substrate and said first and second monocrystalline semiconductor film are vertically connected.
Claim 2
Independent Claim
103 words
A method for manufacturing a stacked semiconductor device, comprising: forming a first non-mono-crystalline semiconductor film on a monocrystalline semiconductor substrate through a first insulating film; converting said first non-mono-crystalline semiconductor film into a first monocrystalline semiconductor film; forming a second non-mono-crystalline semiconductor film on said first monocrystalline semiconductor film through a second insulating film; and converting said second non-mono-crystalline semiconductor film into a second monocrystalline film, wherein the conversion into the monocrystalline semiconductor film is performed by using as a seed crystal at least one connecting region at which said semiconductor substrate and said first and second monocrystalline semiconductor film are vertically connected.
Claim 3
Dependent Claim
28 words
A method according to claim 1 wherein said non-mono-crystalline semiconductor film consists of semiconductor material selected from the group consisting of amorphous semiconductor material and polycrystalline semiconductor material.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said conversion into the monocrystalline semiconductor film is performed by irradiation of a laser or electron beam.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein said connecting region comprises parts of said semiconductor films which do not sandwich said insulating films therebetween.
Claim 6
Dependent Claim
22 words
A method according to claim 4, wherein said connecting region is a projection which is formed from part of said semiconductor substrate.
Claim 7
Dependent Claim
26 words
A method according to claim 5 wherein said of said semiconductor films is formed by conversion into single crystals using said projection as a seed crystal.
Claim 8
Dependent Claim
19 words
A method according to claim 4 wherein said connecting part is formed in a periphery of a semiconductor chip.
Claim 9
Dependent Claim
24 words
A method according to claim 1 wherein said connecting part comprises parts of said semiconductor films and portions of monocrystalline semiconductor materials sandwiched therebetween.
Claim 10
Dependent Claim
39 words
The method according to claim 8 wherein each of said semiconductor films is obtained by conversion into single crystals using as a seed crystal one of said portions of monocrystalline semiconductor material immediately below each of said semiconductor films.
Claim 11
Dependent Claim
27 words
A method according to claim 1 wherein said connecting part is used as one of a ground line and a power source line of an integrated circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-02-10 | 1989-08-12 | 1990-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-02-10 | 1993-08-12 | 1994-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-02-10 | 1997-08-12 | 1998-02-11 | $7700.00 | Window Closed / Lapsed |