Abstract An X-ray lithography apparatus wherein a linear X-ray source is formed by line scanning a target with electron lines, a band-slit having slits which extend in the direction similar to the longitudinal direction of said linear X-ray source and a solar-slit having plural slits in the direction perpendicular to said band-slit are interposed between the X-ray source and a wafer in order to irradiate only the component which is substantially perpendicular to the surface of the wafer out of the X-ray generated from the linear source, and said wafer is made to move continuously or stepwise in respect of a rectangular region which is highly collimated in order to conduct X-ray transfer against a predetermined region.
An X-ray lithography apparatus which is characterized by the structure that a same region on a target is linearly scanned with electron lines emitted from plural electron guns to form a linear X-ray source, that a solar-slit is provided between said linear X-ray source and a mask substrate, the solar-slit comprising band-slits having slits which extend in the direction similar to the longitudinal direction of said X-ray source and which restricts the divergent angle of the X-ray in the direction perpendicular to said longitudinal direction and a group of slits which restricts the divergent angle of the X-ray in the longitudinal direction of the slits of said band-slit, and that said mask substrate is moved either continuously or stepwise in respect of an X-ray irradiation region of a rectangular cross section which is highly collimated by a band-slit or a solar-slit.
Claim 2
Dependent Claim
141 words
An X-ray lithography apparatus which is characterized by the structure that a same region on a target is linearly scanned with electron lines emitted from plural electron guns to form a linear X-ray source, that a solar-slit is provided between said linear X-ray source and a mask substrate, the solar-slit comprising band-slits having slits which extend in the direction similar to the longitudinal direction of said X-ray source and which restricts the divergent angle of the X-ray in the direction perpendicular to said longitudinal direction and a group of slits which restricts the divergent angle of the X-ray in the longitudinal direction of the slits of said band-slit, and that said mask substrate is moved either continuously or stepwise in respect of an X-ray irradiation region of a rectangular cross section which is highly collimated by a band-slit or a solar-slit.
Claim 3
Dependent Claim
31 words
The X-ray lithography apparatus as claimed in claim 1 which is characterized in that the target for generating X-ray is a rotary-type target which is water-cooled in the inner circumference thereof.
Claim 4
Dependent Claim
33 words
The X-ray lithography apparatus as claimed in claim 1 which is characterized in that said solar-slit comprises a plural number of planes arranged in the direction perpendicular to the longitudinal direction of band-slits.
Claim 5
Dependent Claim
21 words
The X-ray lithography apparatus as claimed in claim 1 wherein said solar-slit has a section in the form of a grid.
Claim 6
Dependent Claim
16 words
The X-ray lithography apparatus as claimed in claim 1 wherein said solar-slit comprises plural cylindrical members.
Claim 7
Dependent Claim
26 words
The X-ray lithography apparatus as claimed in any one of claims 1 to 5 wherein said solar-slit is minutely vibrated in the longitudinal direction of band-slits.
Claim 8
Dependent Claim
32 words
The X-ray lithography apparatus as claimed in any one of claims 1 to 5 wherein said mask substrate is vibrated in the longitudinal direction of the band-slits integrally with the semiconductor wafer.