← Back to Patent Explorer
US4568411A Expired / Lapsed US ⏱️ 0.0 years remaining

Metal/semiconductor deposition

Assignee: British Telecommunications PLC
•
Filing: 1984-11-16
•
Granted: 1986-02-04
•
Expires: 2004-11-16
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Metal is deposited by bias sputtering over a two-layer photoresist mask, the lower layer having a thickness at least 1.5 times the metal thickness and the second layer having an edge overhang in excess of 0.1 μm, and unwanted metal removed by lift-off.

Inventors

  • 👤 Brian Martin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 12:29
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/202; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/095

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 122 words
A metal patterning process comprising the steps of forming a mask on the substrate, the mask having a first layer and a second layer overlying the first and the edges of the second layer extending beyond the edges of the first layer, depositing metal over the mask and substrate, and removing the mask to remove the metal overlying the mask leaving a metal pattern over the unmasked areas of substrate; in which (a) the metal is deposited by bias sputtering (b) the thickness of the first layer exceeds the deposited metal thickness by a factor of at least 1.5 (c) the edges of the second layer extend beyond the edges of the first layer by a distance of greater than 0.1 μm.
Claim 2
Dependent Claim 122 words
A metal patterning process comprising the steps of forming a mask on the substrate, the mask having a first layer and a second layer overlying the first and the edges of the second layer extending beyond the edges of the first layer, depositing metal over the mask and substrate, and removing the mask to remove the metal overlying the mask leaving a metal pattern over the unmasked areas of substrate; in which (a) the metal is deposited by bias sputtering (b) the thickness of the first layer exceeds the deposited metal thickness by a factor of at least 1.5 (c) the edges of the second layer extend beyond the edges of the first layer by a distance of greater than 0.1 μm.
Claim 3
Dependent Claim 28 words
A process according to claim 1 in which the thickness of the first layer exceeds the deposited metal thickness by a factor in the range 1.7 to 2.3.
Claim 4
Dependent Claim 28 words
A process according to claim 1 in which the thickness of the first layer exceeds the deposited metal thickness by a factor in the range 1.8 to 2.2.
Claim 5
Dependent Claim 28 words
A process according to claim 1, in which the distance by which the upper layer extends beyond the first layer is in the range 0.3 to 0.7 μm.
Claim 6
Dependent Claim 33 words
A process according to claim 1 or claim 4 in which the width of said first layer is greater than twice the distance by which said second layer extends beyond said first layer.

References Cited (Backward Citations)

GB2023857A Cited
GB2059679A Cited
EP0314633A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-02-03 1989-08-05 1990-02-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-02-03 1993-08-05 1994-02-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-02-03 1997-08-05 1998-02-04 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag