US4567392A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sezawa surface-acoustic-wave device using ZnO(0001)/SiO2 / Si(100)(011)
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1984-12-04
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Granted: 1986-01-28
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Expires: 2004-12-04
Abstract
Abstract A surface acoustic wave device comprises a silicon substrate, a silicon dioxide layer provided on the silicon substrate, a zinc oxide layer provided on the silicon dioxide layer and input and output electrodes provided on the zinc oxide layer. The silicon substrate is cut by a crystalline surface substantially equivalent to the (100)- or (110)-surface, and the zinc oxide layer is such that its crystalline surface substantially equivalent to the (0001)-surface is parallel to the cut-surface of the silicon substrate, so that a surface acoustic wave entered from the input electrode is propagated to the output electrode in a direction substantially equivalent to the [011]- or [001]-axis of the silicon substrate.
Inventors
- 👤 Ryuichi Asai
- 👤 Takeshi Okamoto
- 👤 Shoichi Minagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:28
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/05; H03H9/0538; H03H9/0542; H03H9/02535; H03H9/02543; H03H9/02574
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
89 words
A surface acoustic wave device comprising: a silicon substrate which is cut by a surface equivalent to the (100)-crystalline surface; a silicon dioxide layer provided on said silicon sub- strate; a zinc oxide layer provided on said silicon dioxide layer so that a surface thereof substantially equivalent to the (0001)-crystalline surface is parallel to said cut surface of said silicon substrate, said surface acoustic wave entered from said input electrode being propagated in a direction substantially equivalent to the [011]-axis of said silicon substrate up to said output electrode.
Claim 2
Dependent Claim
89 words
A surface acoustic wave device comprising: a silicon substrate which is cut by a surface equivalent to the (100)-crystalline surface; a silicon dioxide layer provided on said silicon sub- strate; a zinc oxide layer provided on said silicon dioxide layer so that a surface thereof substantially equivalent to the (0001)-crystalline surface is parallel to said cut surface of said silicon substrate, said surface acoustic wave entered from said input electrode being propagated in a direction substantially equivalent to the [011]-axis of said silicon substrate up to said output electrode.
Claim 3
Dependent Claim
89 words
A surface acoustic wave device comprising: a silicon substrate which is cut by a surface substantially equivalent to the (110)-crystalline surface; a silicon dioxide layer provided on said silicon substrate; a zinc oxide layer provided on said silicon dioxide layer so that a surface thereof substantially equivalent to the (0001)-crystalline surface is parallel to said cut surface of said silicon substrate, said surface acoustic wave entered from said input electrode being propagated in a direction substantially equivalent to the [001]-axis of said silicon substrate up to said output electrode.
Claim 4
Dependent Claim
89 words
A surface acoustic wave device comprising: a silicon substrate which is cut by a surface substantially equivalent to the (110)-crystalline surface; a silicon dioxide layer provided on said silicon substrate; a zinc oxide layer provided on said silicon dioxide layer so that a surface thereof substantially equivalent to the (0001)-crystalline surface is parallel to said cut surface of said silicon substrate, said surface acoustic wave entered from said input electrode being propagated in a direction substantially equivalent to the [001]-axis of said silicon substrate up to said output electrode.
Claim 5
Dependent Claim
43 words
A surface acoustic wave device of Claim 1 wherein said crystalline sarfaces of said zinc oxide layer and said silicon substrate and said wave propagation axis of said silicon substrate are deviated within 10 degrees from the (0001)- and (100)-surfaces and [011]-axis, respectively.
Claim 6
Dependent Claim
17 words
A surface acoustic wave device of Claim 1 wherein said surface acoustic wave is a Sezawa wave.
Claim 7
Dependent Claim
36 words
A surface acoustic wave device of Claim 4 wherein said zinc oxide layer has a thickness h 1 which satisfies the relation 4200≦ωh 1 ≦15000 (where ω is the angular frequency of said surface acoustic wave).
Claim 8
Dependent Claim
25 words
A surface acoustic wave device of Claim 5 wherein said silicon dioxide layer has a thickness h 2 which satisfies the relation 126≦ωh 2 ≦10000.
Claim 9
Dependent Claim
24 words
A surface acoustic wave device of Claim 6 wherein a conductive layer is interposed between said zinc oxide layer and said silicon dioxide layer.
Claim 10
Dependent Claim
16 words
A surface acoustic wave device of Claim 7 wherein said each electrode has a comb-shaped structure.
Claim 11
Dependent Claim
24 words
A surface acoustic wave device of Claim 8 wherein said conductive layer is placed at least just below interdigitating portions of said comb-shaped electrodes.
Claim 12
Dependent Claim
24 words
A surface acoustic wave device of Claim 8 wherein said conductive layer is placed at least just above interdigitating portions of said comb-shaped electrodes.
Claim 13
Dependent Claim
30 words
A surface acoustic wave device of Claim 1 wherein said silicon substrate is a substrate also carrying thereon an integrated circuit to be connected to said input and output electrodes.
Claim 14
Dependent Claim
43 words
A surface acoustic wave device of Claim 2 wherein said crystalline surfaces of said zinc oxide layer and said silicon substrate and said wave propagation axis of said silicon substrate are deviated within 10 degrees from the (0001)- and (110)-surfaces and [001]-axis, respectively.
Claim 15
Dependent Claim
17 words
A surface acoustic wave device of Claim 2 wherein said surface acoustic wave is a Sezawa wave.
Claim 16
Dependent Claim
36 words
A surface acoustic wave device of Claim 13 wherein said zinc oxide layer has a thickness h 1 which satisfies the relation 4200≦ωh 1 ≦15000 (where ω is the angular frequency of said surface acoustic wave).
Claim 17
Dependent Claim
25 words
A surface acoustic wave device of Claim 14 wherein said silicon dioxide layer has a thickness h 2 which satisfies the relation 126≦ωh 2 ≦10000.
Claim 18
Dependent Claim
24 words
A surface acoustic wave device of Claim 15 wherein a conductive layer is interposed between said zinc oxide layer and said silicon dioxide layer.
Claim 19
Dependent Claim
16 words
A surface acoustic wave device of Claim 16 wherein said each electrode has a comb-shaped structure.
Claim 20
Dependent Claim
24 words
A surface acoustic wave device of Claim 17 wherein said conductive layer is placed at least just below interdigitating portions of said comb-shaped electrodes.
Claim 21
Dependent Claim
24 words
A surface acoustic wave device of Claim 17 wherein said conductive layer is placed at least just above interdigitating portions of said comb-shaped electrodes.
Claim 22
Dependent Claim
30 words
A surface acoustic wave device of Claim 2 wherein said silicon substrate is a substrate also carrying thereon an integrated circuit to be connected to said input and output electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-27 | 1989-07-29 | 1990-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-27 | 1993-07-29 | 1994-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-27 | 1997-07-29 | 1998-01-28 | $7700.00 | Window Closed / Lapsed |