US4565677A
Expired / Lapsed
US
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Method for purifying raw material gas for use in semiconductor manufacturing and purifier for use in said method and method of manufacturing said purifier
Assignee: Olympus Corp
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Filing: 1984-06-20
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Granted: 1986-01-21
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Expires: 2004-06-20
Abstract
Abstract A purifier for purifying a raw material gas for use in manufacturing semiconductor devices is formed by a hydrogenated amorphous substance of an element selected from a group consisting of Si, Ge, P and As whose hydride gas is used as the raw material gas. This purifier is used for purifying the raw material gas to be purified in such a manner that the raw material gas is brought into contact with the purifier comprising the hydrogenated amorphous substance which is maintained at a temperature a little lower than the decomposition temperature of the raw material gas to efficiently remove the small amount of oxygen from the raw material gas.
Inventors
- 👤 Atsushi Yusa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:10
CPC Classifications
C; C01; C01B; C01B25/00; C01B25/06; C01B33/00; C01B33/04; C01B33/046; C01B6/00; C01B6/34
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
123 words
A method for purifying a raw material gas for use in manufacturing semi-conductor devices, comprising: (a) preparing a purifier by: (i) charging an oxygen absorption tank with a high surface area carrier; (ii) heating the carrier to a temperature greater than a thermal decomposition temperature of at least one gaseous hydride of at least one element selected from the group consisting of silicon, germanium, phosphorus and arsenic; (iii) flushing said heated carrier with said at least one hydride, thereby depositing on said carrier a hydrogenated amorphous layer of said at least one element; (b) heating said purifier to a predetermined temperature; and (c) bringin raw material gas into contact with the heated purifier to remove any oxygen contained in the raw material gas.
Claim 2
Independent Claim
123 words
A method for purifying a raw material gas for use in manufacturing semi-conductor devices, comprising: (a) preparing a purifier by: (i) charging an oxygen absorption tank with a high surface area carrier; (ii) heating the carrier to a temperature greater than a thermal decomposition temperature of at least one gaseous hydride of at least one element selected from the group consisting of silicon, germanium, phosphorus and arsenic; (iii) flushing said heated carrier with said at least one hydride, thereby depositing on said carrier a hydrogenated amorphous layer of said at least one element; (b) heating said purifier to a predetermined temperature; and (c) bringin raw material gas into contact with the heated purifier to remove any oxygen contained in the raw material gas.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said raw material gas comprises a hydride of an element selected from silicon, germanium, phosphorus and arsenic.
Claim 4
Dependent Claim
27 words
A method according to claim 2, wherein said hydrogenated amorphous layer is formed by the same element whose hydride gas is used as the raw material gas.
Claim 5
Dependent Claim
24 words
A method according to claim 2, wherein said purifier is heated to a temperature below the thermal decomposition temperature of the raw material gas.
Claim 6
Dependent Claim
26 words
A method according to claim 2, wherein said purifier is heated to a temperature slightly higher than the thermal decomposition temperature of the raw material gas.
Claim 7
Dependent Claim
70 words
A method according to claim 5, wherein contacting said raw material gas with said purifier produces purified hydride gas and hydrogen gas, and wherein the relative concentrations of the purified hydride gas and the hydrogen gas are detected and the temperature of the purifier is controlled in accordance with the detected relative concentrations such that the concentration of the purified hydride gas with respect to the hydrogen gas remains constant.
Claim 8
Dependent Claim
39 words
A method according to claim 4, wherein the hydrogenated amorphous layer comprises a hydrogenated amorphous silicon, the raw material gas is formed by a silane, and the purifier is heated to a temperature of about 200° to 250° C.
Claim 9
Dependent Claim
37 words
A method according to claim 6, wherein said hydrogenated amorphous layer comprises a hydrogenated amorphous silicon, the raw material gas comprises a silane, and the purifier is heated to a temperature of about 300° to 350° C.
Claim 10
Independent Claim
89 words
A method of making a purifier for purifying a raw material gas for use in manufacturing semi-conductor devices, comprising: charging an oxygen absorption tank with a high surface area carrier; heating the carrier to a temperature greater than a thermal decomposition temperature of at least one gaseous hydride of at least one element selected from the group consisting of silicon, germanium, phosphorus and arsenic; flushing said heated carrier with said at least one hydride, thereby depositing on said carrier a hydrogenated amorphous layer of said at least one element.
Claim 11
Independent Claim
89 words
A method of making a purifier for purifying a raw material gas for use in manufacturing semi-conductor devices, comprising: charging an oxygen absorption tank with a high surface area carrier; heating the carrier to a temperature greater than a thermal decomposition temperature of at least one gaseous hydride of at least one element selected from the group consisting of silicon, germanium, phosphorus and arsenic; flushing said heated carrier with said at least one hydride, thereby depositing on said carrier a hydrogenated amorphous layer of said at least one element.
Claim 12
Dependent Claim
18 words
A method according to claim 9, wherein said gaseous hydride comprises the raw material gas to be purified.
Claim 13
Dependent Claim
24 words
A method according to claim 10, wherein said carrier is heated to the temperature higher than a thermal decomposition temperature of the gaseous hydride.
Claim 14
Dependent Claim
15 words
A method according to claim 10, wherein said gaseous hydride is decomposed by excitation radiation.
Claim 15
Dependent Claim
15 words
A method according to claim 10, wherein said gaseous hydride is decomposed by excitation plasma.
Claim 16
Dependent Claim
21 words
A purifier produced according to the method of claim 9, for purifying raw material gas for use in manufacturing semi-conductor devices.
Claim 17
Dependent Claim
31 words
A purifier according to claim 14, wherein said carrier comprises a material having a large specific surface selected from the group consisting of fine particle silicon, quartz wool and alumina powder.
Claim 18
Dependent Claim
30 words
A purifier according to claim 14, wherein said carrier comprises a porous material having a large specific inner surface selected from the group consisting of zeolite and carbon molecular sieves.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-20 | 1989-07-22 | 1990-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-20 | 1993-07-22 | 1994-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-20 | 1997-07-22 | 1998-01-21 | $7700.00 | Window Closed / Lapsed |