Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
382 words
A series-parallel-series shift register memory comprising: a serial data input (200) for first electrical signals having a value range of at least two values; a redundancy generator (202, 204) fed by said serial data input for generating, on the basis of a plurality of p successive first electrical signals, (n-p) greater than or equal to one redundant electrical signal; a converter (22) fed by said redundancy generator for receiving said p first electrical signals and thereafter said (n-p) redundant electrical signals and converting each of these electrical signals into a series of p data representations; and a substrate comprising storage positions for the storage of a data representation as represented by a single physical quantity in that storage position; said substrate having a serial input register (206) fed by said converter; a plurality of parallel storage registers (208) fed in parallel by parallel outputs of said serial input register; and a serial output register (210) fed in parallel by the output of each of said storage registers; and comprising: a serial data output (32), wherein said storage registers comprise first storage registers for transiently storing data representations of said first electrical signals in series of equal lengths of m>2 storage positions each; and second storage registers for transiently storing data representations of said redundant electrical signals in a second series of equal lengths of 1<t≦(m-1) storage positions each; said shift register memory having a transfer control device for transferring these representations in parallel to the storage registers after introduction of n data representations in the input register and at the same time transferring n data representations from the storage registers to the output register; said transfer control otherwise activating only the input/and output registers, whereby the storage length of said first storage registers is longer than the storage length of said second storage registers; said shift register memory furthermore comprising a second converter (34) fed by said serial data output for reconstituting electrical signals from data representations received; and a redundancy reducer (212, 214) fed by said second converter for receiving first said (n-p) redundant signals and thereafter said p first electrical signals and thereby correcting at least one deficient electrical signal within said p first electrical signals for outputting said p first electrical signals on a serial data output (230) element.
Claim 2
Dependent Claim
382 words
A series-parallel-series shift register memory comprising: a serial data input (200) for first electrical signals having a value range of at least two values; a redundancy generator (202, 204) fed by said serial data input for generating, on the basis of a plurality of p successive first electrical signals, (n-p) greater than or equal to one redundant electrical signal; a converter (22) fed by said redundancy generator for receiving said p first electrical signals and thereafter said (n-p) redundant electrical signals and converting each of these electrical signals into a series of p data representations; and a substrate comprising storage positions for the storage of a data representation as represented by a single physical quantity in that storage position; said substrate having a serial input register (206) fed by said converter; a plurality of parallel storage registers (208) fed in parallel by parallel outputs of said serial input register; and a serial output register (210) fed in parallel by the output of each of said storage registers; and comprising: a serial data output (32), wherein said storage registers comprise first storage registers for transiently storing data representations of said first electrical signals in series of equal lengths of m>2 storage positions each; and second storage registers for transiently storing data representations of said redundant electrical signals in a second series of equal lengths of 1<t≦(m-1) storage positions each; said shift register memory having a transfer control device for transferring these representations in parallel to the storage registers after introduction of n data representations in the input register and at the same time transferring n data representations from the storage registers to the output register; said transfer control otherwise activating only the input/and output registers, whereby the storage length of said first storage registers is longer than the storage length of said second storage registers; said shift register memory furthermore comprising a second converter (34) fed by said serial data output for reconstituting electrical signals from data representations received; and a redundancy reducer (212, 214) fed by said second converter for receiving first said (n-p) redundant signals and thereafter said p first electrical signals and thereby correcting at least one deficient electrical signal within said p first electrical signals for outputting said p first electrical signals on a serial data output (230) element.
Claim 3
Dependent Claim
47 words
A series/parallel/series shift register memory as claimed in claim 1, characterized in that each group of n bits successively presented to the data input comprises at least two redundant code elements, the series/parallel/series shift register memory having a second equal storage length for these redundant code elements.
Claim 4
Dependent Claim
65 words
A series/parallel/series shift register memory as claimed in claim 1 or 2, characterized in that said redundancy generator and redundancy reducer each comprise a storage element for the storage of a data element which is copied to form a redundant code element and for the resubstitution of said code element in the position of the originating data element within the same group of data elements.
Claim 5
Dependent Claim
65 words
A series/parallel/series shift register memory as claimed in claim 1 or 2 in which the storage registers comprise a modular array configuration of storage positions, characterized in that a storage register intended for a redundant code element comprises an array position (118) which entirely forms part of a neighboring array storage position of the same storage register due to enlargement of the latter storage position.
Claim 6
Dependent Claim
42 words
A series/parallel/series shift register memory as claimed in any of the claims 1 or 2, characterized in that the storage positions, the converters, the redundancy generator and the redundancy reducer are suitable for the processing of bivalent data elements or code elements.
Claim 7
Dependent Claim
22 words
A series/parallel/series shift register memory as claimed in claim 5, characterized in that the storage positions are formed to accommodate magnetic bubbles.
Claim 8
Dependent Claim
26 words
A series/parallel/series shift register memory as claimed in any of the claims 1 or 2, characterized in that the storage positions form a charge transfer device.
Claim 9
Dependent Claim
55 words
In a series/parallel/series shift register memory of claims 1 or 2 wherein the substrate comprises a serial input register, a serial output register, and a number K of storage registers (K>1) of different lengths as measured in a number of storage periods which are connected in parallel between the input register and the output register.
Claim 10
Dependent Claim
44 words
A display apparatus comprising a series/parallel/series shift register memory as claimed in any one of claims 1 or 2, characterized in that the storage capacity of the series/parallel/series shift register memory suffices for the storage of a two-dimensional picture frame organized in picture lines.