US4563240A
Expired / Lapsed
US
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Method and apparatus for plasma process
Assignee: Hitachi Ltd
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Filing: 1984-08-02
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Granted: 1986-01-07
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Expires: 2004-08-02
Abstract
Abstract The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.
Inventors
- 👤 Fumio Shibata
- 👤 Katsuaki Nagatomo
- 👤 Hidetomo Fukuhara
- 👤 Gen Marumoto
- 👤 Sadayuki Okudaira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:13
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32082; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3348
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
27 words
A plasma-processing method comprising a step of processing samples with a radio-frequency plasma, and another step of processing the radio-frequency plasma processed samples with a microwave plasma.
Claim 2
Dependent Claim
27 words
A plasma-processing method comprising a step of processing samples with a radio-frequency plasma, and another step of processing the radio-frequency plasma processed samples with a microwave plasma.
Claim 3
Dependent Claim
89 words
The plasma-processing method as defined in claim 1, wherein the step of processing samples with a radio-frequency plasma includes processing the samples with a radio-frequency plasma having a large self-bias, and the another step of processing the radio-frequency plasma process samples with a microwave plasma includes processing the radio-frequency plasma process samples with a microwave plasma having a small self-bias so as to enable an increase in the plasma processing rate of said samples and a reduction of electrical damage of said samples due to ions in the plasma.
Claim 4
Dependent Claim
44 words
The plasma-processing method as defined in claim 1, wherein said samples which have been processed by the utilization of said radio-frequency plasma are subjected to a plasma process as far as a final stage by the utilization of a plurality of said microwave plasmas.
Claim 5
Dependent Claim
44 words
The plasma-processing method as defined in claim 3, wherein said samples which have been processed by the utilization of said radio-frequency plasma are subjected to plasma processes in series as far as said final stage by the utilization of said plurality of microwave plasmas.
Claim 6
Dependent Claim
44 words
The plasma-processing method as defined in claim 3, wherein said samples which have been processed by the utilization of said radio-frequency plasma are subjected to plasma processes in parallel as far as said final stage by the utilization of said plurality of microwave plasmas.
Claim 7
Dependent Claim
41 words
A plasma-processing apparatus comprising a radio-frequency plasma generation means which generates a radio-frequency plasma for processing a sample with said radio-frequency plasma, and a microwave plasma generation means which generates a microwave plasma for processing said sample with said microwave plasma.
Claim 8
Dependent Claim
41 words
A plasma-processing apparatus comprising a radio-frequency plasma generation means which generates a radio-frequency plasma for processing a sample with said radio-frequency plasma, and a microwave plasma generation means which generates a microwave plasma for processing said sample with said microwave plasma.
Claim 9
Dependent Claim
31 words
The plasma-processing apparatus as defined in claim 6, wherein said microwave plasma generation means is provided on a post-process side of said radio-frequency plasma generation means, through an auxiliary vacuum chamber.
Claim 10
Dependent Claim
36 words
The plasma-processing apparatus as defined in claim 7, wherein a plurality of sets of said microwave plasma generation means is provided on the post-process side of said radio-frequency plasma generation means, through said auxiliary vacuum chamber.
Claim 11
Dependent Claim
29 words
The plasma-processing apparatus as defined in claim 8, wherein said plurality of sets of said microwave plasma generation means is provided in series after said radio-frequency plasma generation means.
Claim 12
Dependent Claim
29 words
The plasma-processing apparatus as defined in claim 8, wherein said plurality of sets of said microwave plasma generation means is provided in parallel after said radio-frequency plasma generation means.
Claim 13
Dependent Claim
53 words
The plasma-processing apparatus as defined in claim 7, wherein said microwave plasma generation means is provided on the post-process side of said radio-frequency plasma generation means, and a transportation means is provided between said radio-frequency plasma generation means and said microwave plasma generation means for transporting said samples through said auxiliary vacuum chamber.
Claim 14
Dependent Claim
104 words
The plasma-processing apparatus as defined in claim 6, wherein said radio-frequency plasma generation means is disposed for initially processing a sample with said radio-frequency plasma, and said microwave plasma generation means is disposed for processing said radio-frequency plasma processed sample, said radio-frequency plasma generation means enabling processing of said samples with a radio-frequency plasma having a large self-bias, and said microwave plasma generation means enabling processing of said radio-frequency plasma processed samples with a microwave plasma having a small self-bias, thereby enabling an increase in the plasma processing rate and a reduction in electrical damage of the samples due to ions in the plasma.
References Cited (Backward Citations)
US4316791A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-06 | 1989-07-08 | 1990-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-06 | 1993-07-08 | 1994-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-06 | 1997-07-08 | 1998-01-07 | $7700.00 | Window Closed / Lapsed |