US4560901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light-emitting device having at least two semiconductor crystals
Assignee: US Philips Corp
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Filing: 1982-12-27
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Granted: 1985-12-24
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Expires: 2002-12-27
Abstract
Abstract An electroluminescent device is provided with two semiconductor crystals, in each of which an electroluminescent junction is formed, which junctions can alternately be energized from an external current source. One of the semiconductor crystals is of the p/n-type and the other semiconductor crystal is of the n/p-type, while both crystals are provided on the bottom of a reflecting cavity of a single metal support.
Inventors
- 👤 Jacques C. Thillays
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:10
CPC Classifications
H; H10; H10W; H10W90/00; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/85; H10H20/852; H10H20/853; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W74/00; H10W74/10; H10W90/701; H10W90/751; H10W90/753; H10W90/756
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
179 words
A light transmitter comprising at least two semiconductor crystals, in each of which an electroluminescent junction is formed between two regions of opposite conductivity types, said crystals being accommodated in a transparent protective envelope which has a surface from which the radiation emitted by said junction emanates, which junctions can be alternately energized from an external current source through only output electrodes which are passed through said transparent envelope, said two crystals being secured on a single metal support on the bottom of a reflecting cavity, one of the crystals having a subjacent n-type region secured to said support and an upper p-type region from which the light emanates, and the other crystal having a subjacent p-type region secured to said support and an upper n-type region from which the light emanates, said support comprising a portion of a first of said two electrodes with said subjacent regions of the crystals secured thereto, while a second of said two electrodes is connected to the upper regions of said two crystals, so that the two crystals are connected in parallel.
Claim 2
Dependent Claim
179 words
A light transmitter comprising at least two semiconductor crystals, in each of which an electroluminescent junction is formed between two regions of opposite conductivity types, said crystals being accommodated in a transparent protective envelope which has a surface from which the radiation emitted by said junction emanates, which junctions can be alternately energized from an external current source through only output electrodes which are passed through said transparent envelope, said two crystals being secured on a single metal support on the bottom of a reflecting cavity, one of the crystals having a subjacent n-type region secured to said support and an upper p-type region from which the light emanates, and the other crystal having a subjacent p-type region secured to said support and an upper n-type region from which the light emanates, said support comprising a portion of a first of said two electrodes with said subjacent regions of the crystals secured thereto, while a second of said two electrodes is connected to the upper regions of said two crystals, so that the two crystals are connected in parallel.
Claim 3
Dependent Claim
18 words
A device as claimed in claim 1, characterized in that the semiconductor crystals are obtained from III-V compounds.
Claim 4
Dependent Claim
29 words
A device as claimed in claim 2, characterized in that the crystal of the n/p-conductivity type comprises GaAlAs and in that the crystal of the p/n-conductivity type comprises GaP.
Claim 5
Dependent Claim
48 words
A device as claimed in claim 1, 2 or 3, wherein said two crystals comprise a crystal of GaAlAs and a crystal of GaP which are surrounded by an envelope comprising a first filtering zone of green color, on which a second zone of red color is formed.
Claim 6
Dependent Claim
41 words
A device as claimed in claim 2, characterized in that said two crystals are made of GaAs and in that the junctions formed therein emit radiations of the same wave-length, irrespective of the direction of the current supplied to the device.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-23 | 1989-06-24 | 1989-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-23 | 1993-06-24 | 1993-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-23 | 1997-06-24 | 1997-12-24 | $7700.00 | Window Closed / Lapsed |