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US4560634A Expired / Lapsed US ⏱️ 0.0 years remaining

Electrophotographic photosensitive member using microcrystalline silicon

Assignee: Toshiba Corp
•
Filing: 1982-05-26
•
Granted: 1985-12-24
•
Expires: 2002-05-26
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Abstract

Abstract An electrophotographic photosensitive member constituted of an electroconductive supporting substrate and a photoconductive layer provided on said substrate, said photoconductive layer being composed primarily of a microcrystalline silicon or a layered product of a microcrystalline silicon and an amorphous silicon.

Inventors

  • 👤 Takeshi Matsuo
  • 👤 Yukio Suzuki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 22:25
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221

Claims Analysis

Total Claims: 24
Claim 1
Independent Claim 75 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer provided on said supporting substrate, wherein said photoconductive layer consists essentially of a crystalline silicon having a specific dark resistance greater than 10 6 ohm cm, said crystalline silicon being produced by a glow discharge method under the following conditions: supporting substrate temperature: 300°-350° C.; powder density: 0.5-5 W/cm 2 ; and pressure: 0.01-10 Torr, using hydrogen as a carrier gas.
Claim 2
Dependent Claim 75 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer provided on said supporting substrate, wherein said photoconductive layer consists essentially of a crystalline silicon having a specific dark resistance greater than 10 6 ohm cm, said crystalline silicon being produced by a glow discharge method under the following conditions: supporting substrate temperature: 300°-350° C.; powder density: 0.5-5 W/cm 2 ; and pressure: 0.01-10 Torr, using hydrogen as a carrier gas.
Claim 3
Dependent Claim 25 words
An electrophotographic photosensitive member according to claim 1, wherein said photosensitive member further comprises a layer comprised of amorphous silicon disposed on said photoconductive layer.
Claim 4
Dependent Claim 18 words
An electrophotographic photosensitive member according to claim 2, wherein said photoconductive layer is adjacent to said supporting substrate.
Claim 5
Dependent Claim 22 words
An electrophotographic photosensitive member according to claim 2, wherein said layer comprised of amorphous silicon layer is adjacent to said supporting substrate.
Claim 6
Dependent Claim 25 words
An electrophotographic photosensitive member according to claim 1 or claim 2, wherein the photoconductive layer is doped with 5 to 30 atomic % of hydrogen.
Claim 7
Dependent Claim 30 words
An electrophotographic photosensitive member according to claim 1 or claim 2, wherein at least one from the group consisting of oxygen, nitrogen and carbon is doped in the photoconductive layer.
Claim 8
Dependent Claim 30 words
An electrophotographic photosensitive member according to claim 6, wherein the doping amount of at least one kind of oxygen, nitrogen and carbon is 10 -4 to 10 -3 atomic %.
Claim 9
Dependent Claim 32 words
An electrophotographic photosensitive member according to claim 1 or claim 2, wherein an element of the Group III A of the periodic table is doped as a dopant in the photoconductive layer.
Claim 10
Dependent Claim 32 words
An electrophotographic photosensitive member according to claim 8, wherein the doping amount of an element of the Group III A of the periodic table is 10 -6 to 10 -4 atomic %.
Claim 11
Dependent Claim 32 words
An electrophotographic photosensitive member according to claim 1 or claim 2, wherein an element of the Group V A of the periodic table is doped as a dopant in the photoconductive layer.
Claim 12
Dependent Claim 32 words
An electrophotographic photosensitive member according to claim 10, wherein the doping amount of an element of the Group V A in the photoconductive layer is 10 -5 to 10 -2 atomic %.
Claim 13
Dependent Claim 21 words
An electrophotographic photosensitive member according to claim 1 or claim 2, having further a surface protective layer on the photoconductive layer.
Claim 14
Dependent Claim 21 words
An electrophotographic photosensitive member according to claim 1 or claim 2, further having a reflection prevention layer on the photoconductive layer.
Claim 15
Dependent Claim 29 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer wherein said photoconductive layer consists essentially of silicon having a crystal diffraction pattern at 27°.
Claim 16
Dependent Claim 29 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer wherein said photoconductive layer consists essentially of silicon having a crystal diffraction pattern at 27°.
Claim 17
Dependent Claim 31 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer wherein said photoconductive layer consists essentially of silicon having microcrystals with particle sizes of several 10 angstroms.
Claim 18
Dependent Claim 31 words
An electrophotographic photosensitive member, which comprises an electroconductive supporting substrate and a photoconductive layer wherein said photoconductive layer consists essentially of silicon having microcrystals with particle sizes of several 10 angstroms.
Claim 19
Dependent Claim 30 words
An electrophotographic photosensitive member according to claim 3, wherein the ratio of the thickness of said lower layer to the thickness of said upper layer is about 0.01-0.5 to 1.
Claim 20
Dependent Claim 16 words
An electrophotographic photosensitive member according to claim 16, wherein said ratio is about 0.1-0.5 to 1.
Claim 21
Dependent Claim 30 words
An electrophotographic photosensitive member according to claim 2, wherein said supporting substrate temperature is 320°-350° C., said power density is 0.5-5 W/cm 2 , and said pressure is 0.02-0.2 Torr.
Claim 22
Dependent Claim 30 words
An electrophotographic photosensitive member according to claim 4, wherein the ratio of the thickness of said upper layer to the thickness of said lower layer is about 0.01-0.5 to 1.
Claim 23
Dependent Claim 16 words
An electrophotographic photosensitive member according to claim 19, wherein said ratio is about 0.1-0.5 to 1.
Claim 24
Dependent Claim 23 words
An electrophotographic photosensitive member according to claim 1, wherein said crystalline silicon has a specific dark resistance of 10 11 ohm.cm or more.

References Cited (Backward Citations)

US4004954A Cited
US4225222A Cited
US4265991A Cited
US4253882A Cited
JPS56155945A Cited
DE3134189A1 Cited
US4420546A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-12-23 1989-06-24 1989-12-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-12-23 1993-06-24 1993-12-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-12-23 1997-06-24 1997-12-24 $7700.00 Window Closed / Lapsed

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