Abstract The semiconductor device has a first emitter layer and an auxiliary first emitter layer each having a first electrical conductivity, a first base layer having a second electrical conductivity, a second base layer having said first electrical conductivity and a second emitter layer having said second electrical conductivity. The layers are formed in the stated order from one main surface of the semiconductor to the other with the first base layer being partially exposed in the region of the auxiliary first emitter layer on said one main surface to form a gate region. A heavy metal impurity such as gold or platinum whose density is higher than the impurity density determining the electrical conductivity of said second base layer is selectively diffused in a particular region which extends through said gate region to make the specific resistance of said second base layer inside said particular region higher than the specific resistance of said second base layer outside said particular region.
A semiconductor device having a major surface, a first emitter region of first conductivity type disposed from said major surface into a first base layer of second conductivity type, an auxiliary emitter region of first conductivity type disposed from said major surface into said first base layer, a second base layer of first conductivity type having a first impurity concentration, and a second emitter region of second conductivity type, wherein the first base layer has a gate region extending to the major surface characterized in that a dopant of heavy metal impurities having a concentration higher than said first impurity concentration of said second base layer and above approximately 2.5×10 13 /cm 3 is selectively diffused in a particular region which is extended from said major surface through said gate region and through the first base layer, the second base layer, and the second emitter region, but not through the first emitter region or auxiliary emitter region, to make the specific resistance of said second base layer inside said particular region higher than the specific resistance of said second base layer outside said particular region.
Claim 2
Dependent Claim
185 words
A semiconductor device having a major surface, a first emitter region of first conductivity type disposed from said major surface into a first base layer of second conductivity type, an auxiliary emitter region of first conductivity type disposed from said major surface into said first base layer, a second base layer of first conductivity type having a first impurity concentration, and a second emitter region of second conductivity type, wherein the first base layer has a gate region extending to the major surface characterized in that a dopant of heavy metal impurities having a concentration higher than said first impurity concentration of said second base layer and above approximately 2.5×10 13 /cm 3 is selectively diffused in a particular region which is extended from said major surface through said gate region and through the first base layer, the second base layer, and the second emitter region, but not through the first emitter region or auxiliary emitter region, to make the specific resistance of said second base layer inside said particular region higher than the specific resistance of said second base layer outside said particular region.
Claim 3
Dependent Claim
15 words
A semiconductor device as set forth in claim 1 wherein said heavy metal is gold.
Claim 4
Dependent Claim
15 words
A semiconductor device as set forth in claim 1, wherein said heavy metal is platinum.