US4559099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching device
Assignee: TECHNICS GmbH
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Filing: 1984-08-24
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Granted: 1985-12-17
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Expires: 2004-08-24
Abstract
Abstract An etching device is disclosed which comprises a high frequency generator and a reactor in close proximity to each other. The reactor has a plasma zone and a processing zone which open directly into each other. The device is advantageous for chemical dry etching in that a short distance between plasma zone and processing zone offers the benefit of small radical loss.
Inventors
- 👤 Gerhard Liebel
- 👤 Bert Kegel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:55
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/16
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
101 words
Etching device comprising a high frequency generator (2) having a radiator (3) and a resonator (4), where the said radiator (3) projects directly into the said resonator (4); a reactor (5) having a plasma zone (6) and a processing zone (7) which open directly into each other, where one of these zones, the plasma zone (6), is surrounded by the said resonator (4) except the direct opening of the said plasma zone (6) into the said processing zone (7); means (8) for introducing the gaseous plasma medium into the said reactor (5); and means (9) for evacuating the said reactor (5).
Claim 2
Dependent Claim
101 words
Etching device comprising a high frequency generator (2) having a radiator (3) and a resonator (4), where the said radiator (3) projects directly into the said resonator (4); a reactor (5) having a plasma zone (6) and a processing zone (7) which open directly into each other, where one of these zones, the plasma zone (6), is surrounded by the said resonator (4) except the direct opening of the said plasma zone (6) into the said processing zone (7); means (8) for introducing the gaseous plasma medium into the said reactor (5); and means (9) for evacuating the said reactor (5).
Claim 3
Dependent Claim
23 words
Etching device according to claim 1, characterized by a high frequency generator (2) having a continuously variable power of 30 to 300 W.
Claim 4
Dependent Claim
20 words
Etching device according to claim 1, characterized by a high frequency generator (2) for an energization in the microwave range.
Claim 5
Dependent Claim
26 words
Etching device according to claim 3, characterized by a high frequency generator (2) of a frequency of 1 to 30 and especially 2 to 5 GHz.
Claim 6
Dependent Claim
24 words
Etching device according to claim 1, characterized by a reactor (5) adapted to a processing pressure range of 1×10 -1 to 2×10 1 hPa.
Claim 7
Dependent Claim
19 words
Etching device according to claim 1, characterized by two separate chambers (6, 7) connected by a ring-like sealing (10).
Claim 8
Dependent Claim
30 words
Etching device according to claim 6, characterized in that the two chambers (6, 7) are disposed above each other where the upper chamber (6) is surrounded by the resonator (4).
Claim 9
Dependent Claim
24 words
Etching device according to claim 1, characterized in that the reactor (5) is provided with a gas inlet (11) for intermittently breaking the vacuum.
Claim 10
Dependent Claim
26 words
Etching device according to claim 8, characterized in that the inlet (11) ends into one or several nozzles (12) for blowing gas jets onto articles treated.
References Cited (Backward Citations)
US4065369A
Cited
US4298419A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-16 | 1989-06-17 | 1989-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-16 | 1993-06-17 | 1993-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-16 | 1997-06-17 | 1997-12-17 | $7700.00 | Window Closed / Lapsed |