Method and apparatus for detecting edge of fine pattern on specimen

Claim 1

A method of detecting the edge of a fine circuit pattern formed on a semiconductor device, comprising the steps of: storing a model wave form signal representing the estimated amount of secondary electrons to be obtained at each scanning position on a line intersecting the edge of said circuit pattern along which an electron beam is to be scanned, said model wave form signal being determined on the basis of the material of the circuit pattern, a cross section of the circuit pattern, the acceleration voltage of the electron beam which is to scan the circuit pattern and the diameter of the electron beam; projecting an electron beam from an electron lens system onto successive scanning points along said scanning line extending at least across the edge portion of said fine circuit pattern; sequentially detecting secondary electrons emitted from each of the scanning positions on the scanning line resulting from the irradiation of said circuit pattern by said electron beam and storing an actual wave form signal representing the amount of detected secondary electrons at each said scanning position; and comparing said actual wave form signal and said model wave form signal while shifting the model wave form signal with respect to the actual wave form signal in the direction of said scanning, thereby obtaining a measure of the degree of inconsistency between the actual wave form signal and the model wave form signal for each point on the actual waveform signal to detect a position representing the position of the edge along the scanning point direction on the basis of a designated position in said model wave form signal when the highest coincidence exists between the actual waveform signal and said model waveform signal.

Claim 2

A method of detecting the edge of a fine circuit pattern formed on a semiconductor device, comprising the steps of: storing a model wave form signal representing the estimated amount of secondary electrons to be obtained at each scanning position on a line intersecting the edge of said circuit pattern along which an electron beam is to be scanned, said model wave form signal being determined on the basis of the material of the circuit pattern, a cross section of the circuit pattern, the acceleration voltage of the electron beam which is to scan the circuit pattern and the diameter of the electron beam; projecting an electron beam from an electron lens system onto successive scanning points along said scanning line extending at least across the edge portion of said fine circuit pattern; sequentially detecting secondary electrons emitted from each of the scanning positions on the scanning line resulting from the irradiation of said circuit pattern by said electron beam and storing an actual wave form signal representing the amount of detected secondary electrons at each said scanning position; and comparing said actual wave form signal and said model wave form signal while shifting the model wave form signal with respect to the actual wave form signal in the direction of said scanning, thereby obtaining a measure of the degree of inconsistency between the actual wave form signal and the model wave form signal for each point on the actual waveform signal to detect a position representing the position of the edge along the scanning point direction on the basis of a designated position in said model wave form signal when the highest coincidence exists between the actual waveform signal and said model waveform signal.

Claim 3

An apparatus for detecting the edge of a fine pattern formed on a semiconductor device, comprising: first memory means for storing a model waveform signal representing the estimated amount of secondary electrons to be obtained at each scanning position on a line intersecting an edge of said circuit pattern along which an electron beam is to be scanned, said model waveform signal being determined on the basis of the material of the circuit pattern, a cross section of the circuit pattern, the acceleration voltage of the electron beam which is to scan the circuit pattern, and the electron beam diameter; an electron lens system for projecting an electron beam onto successive scanning points along said scanning line extending at least across the edge portion of said fine circuit pattern; a secondary electron detector for sequentially detecting secondary electrons emitted from the scanning positions on said scanning line due to irradiation of said circuit pattern by said electron beam; second memory means for storing an actual waveform signal representing the amount of detected secondary electrons for each scanning position as detected by said secondary electron detector; means for producing a signal representative of the difference between said actual waveform signal and said model waveform signal by comparing these signals while shifting the model waveform signal from said first memory means with respect to the actual waveform signal from said second memory means in the direction of the scanning point during successive comparison operations; and means for analyzing said difference signal from said difference signal producing means to detect as a position of said edge one of the scanning points in said actual waveform signal which corresponds to a designated scanning point in said model wave form signal when said difference signal has a minimum value.

Claim 4

An apparatus for detecting the edge of a fine pattern formed on a semiconductor device, comprising: first memory means for storing a model waveform signal representing the estimated amount of secondary electrons to be obtained at each scanning position on a line intersecting an edge of said circuit pattern along which an electron beam is to be scanned, said model waveform signal being determined on the basis of the material of the circuit pattern, a cross section of the circuit pattern, the acceleration voltage of the electron beam which is to scan the circuit pattern, and the electron beam diameter; an electron lens system for projecting an electron beam onto successive scanning points along said scanning line extending at least across the edge portion of said fine circuit pattern; a secondary electron detector for sequentially detecting secondary electrons emitted from the scanning positions on said scanning line due to irradiation of said circuit pattern by said electron beam; second memory means for storing an actual waveform signal representing the amount of detected secondary electrons for each scanning position as detected by said secondary electron detector; means for producing a signal representative of the difference between said actual waveform signal and said model waveform signal by comparing these signals while shifting the model waveform signal from said first memory means with respect to the actual waveform signal from said second memory means in the direction of the scanning point during successive comparison operations; and means for analyzing said difference signal from said difference signal producing means to detect as a position of said edge one of the scanning points in said actual waveform signal which corresponds to a designated scanning point in said model wave form signal when said difference signal has a minimum value.