US4549199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device providing a contact structure which can be miniaturized
Assignee: Fujitsu Ltd
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Filing: 1983-07-14
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Granted: 1985-10-22
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Expires: 2003-07-14
Abstract
Abstract A semiconductor device comprises a connection structure composed of a first conductive layer formed in or on a semiconductor substrate, a second conductive layer arranged adjacent to the first conductive layer, and a third conductive layer connecting the first conductive layer to the second conductive layer. The device of the present invention provides a contact structure which can be miniaturized.
Inventors
- 👤 Takahiko Yamauchi
- 👤 Teruo Seki
- 👤 Keizo Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:09
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
164 words
A semiconductor device having a semiconductor substrate, comprising: a connection structure including: a first conductive layer formed in or on the semiconductor substrate; a second conductive layer arranged adjacent to said first conductive layer; and a third conductive layer connecting said first conductiver layer to said second conductive layer by being in contact with said first and second conductive layers in a quadrangular contact region which is formed where said first conductive layer is adjacent to said second conductive layer and is defined so as to extend over said first and second conductive layers, the portion of said second conductive layer located within said quadrangular contact region having a pattern such that the width of said second conductive layer in a direction along one side or said quadrangular contact region is narrower at a predetermined section of said second conductive layer than at a section thereof spaced from the predetermined section along the longitudinal direction of said second conductive layer from the end thereof.
Claim 2
Dependent Claim
164 words
A semiconductor device having a semiconductor substrate, comprising: a connection structure including: a first conductive layer formed in or on the semiconductor substrate; a second conductive layer arranged adjacent to said first conductive layer; and a third conductive layer connecting said first conductiver layer to said second conductive layer by being in contact with said first and second conductive layers in a quadrangular contact region which is formed where said first conductive layer is adjacent to said second conductive layer and is defined so as to extend over said first and second conductive layers, the portion of said second conductive layer located within said quadrangular contact region having a pattern such that the width of said second conductive layer in a direction along one side or said quadrangular contact region is narrower at a predetermined section of said second conductive layer than at a section thereof spaced from the predetermined section along the longitudinal direction of said second conductive layer from the end thereof.
Claim 3
Dependent Claim
41 words
A semiconductor device according to claim 1, wherein said second conductive layer has a pattern with a square or rectangular shape, and wherein one corner portion of the square or rectangular shape is cut so as to have a triangular shape.
Claim 4
Dependent Claim
43 words
A semiconductor device according to claim 1, wherein said second conductive layer has a pattern with a square or rectangular shape, and wherein one corner of the square or rectangular shape is cut so as to have a smaller square or rectangular shape.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said second conductive layer is made of polycrystalline silicon, molybdenum, or tungsten.
Claim 6
Dependent Claim
128 words
A semiconductor device having a semiconductor substrate, comprising: a first conductive layer formed in the semiconductor substrate, a quadrangular contact region defining a contact window over at least a portion of said first conductive layer; a second conductive layer arranged adjacent to said first conductive layer, said second conductive layer including a first portion located outside said contact window and a second portion located within said contact window, said second portion having a width at predetermined points of said second portion taken along the longitudinal direction thereof, which is less than the width of said first portion; and a third conductive layer connecting said first conductive layer to said second conductive layer by being in contact with said first and second conductive layers in the quadrangular contact region.
Claim 7
Dependent Claim
128 words
A semiconductor device having a semiconductor substrate, comprising: a first conductive layer formed in the semiconductor substrate, a quadrangular contact region defining a contact window over at least a portion of said first conductive layer; a second conductive layer arranged adjacent to said first conductive layer, said second conductive layer including a first portion located outside said contact window and a second portion located within said contact window, said second portion having a width at predetermined points of said second portion taken along the longitudinal direction thereof, which is less than the width of said first portion; and a third conductive layer connecting said first conductive layer to said second conductive layer by being in contact with said first and second conductive layers in the quadrangular contact region.
Claim 8
Dependent Claim
30 words
A semiconductor device according to claim 5, wherein said second portion of said second conductive layer has a quadrangular shape with one corner of the quadrangular shape being deleted therefrom.
Claim 9
Dependent Claim
15 words
A semiconductor device according to claim 6, wherein said second conductive layer comprises polycrystalline silicon.
Claim 10
Dependent Claim
30 words
A semiconductor device according to claim 5, wherein said second portion of said second conductive layer has a quadrangular shape with a quadrangular corner of the quadrangular shape being deleted.
Claim 11
Dependent Claim
15 words
A semiconductor device according to claim 8, wherein said second conductive layer comprises polycrystalline silicon.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 5, wherein said second portion of said second conductive layer has a triangular shape.
Claim 13
Dependent Claim
15 words
A semiconductor device according to claim 10, wherein said second conductive layer comprises polycrystalline silicon.
Claim 14
Dependent Claim
109 words
A semiconductor device having a semiconductor substrate, comprising: a first conductive layer formed in the semiconductor substrate, a quadrangular contact region defining a contact window being formed on at least a portion of said first conductive layer; a second conductive layer arranged adjacent to said first conductive layer, said second conductive layer including a first portion formed outside said contact window and a second portion formed within said contact window, the width of said second portion being variable; and a third conductive layer connecting said first conductive layer to said second conductive layer by being in contact with said first and second conductive layers in the quadrangular contact region.
Claim 15
Dependent Claim
109 words
A semiconductor device having a semiconductor substrate, comprising: a first conductive layer formed in the semiconductor substrate, a quadrangular contact region defining a contact window being formed on at least a portion of said first conductive layer; a second conductive layer arranged adjacent to said first conductive layer, said second conductive layer including a first portion formed outside said contact window and a second portion formed within said contact window, the width of said second portion being variable; and a third conductive layer connecting said first conductive layer to said second conductive layer by being in contact with said first and second conductive layers in the quadrangular contact region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-21 | 1989-04-22 | 1989-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-21 | 1993-04-22 | 1993-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-21 | 1997-04-22 | 1997-10-22 | $7700.00 | Window Closed / Lapsed |