US4546726A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for reacting a semiconductor wafer with steam
Assignee: Toshiba Corp
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Filing: 1983-10-26
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Granted: 1985-10-15
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Expires: 2003-10-26
Abstract
Abstract An apparatus for reacting a semiconductor wafer with steam includes a reaction tube and a heater for heating the reaction tube. The reaction tube is divided into three chambers by partition plates having a through hole. Pure water is directly supplied into the most upstream chamber and is evaporated into steam. The steam enters the second chamber and further heated therein into superheated steam. The superheated steam enters the most downstream chamber in which a semiconductor wafer or wafers are placed, and is heated sufficient for reaction with the wafer to form an oxide film thereon.
Inventors
- 👤 Syuichi Nagasaka
- 👤 Siyoukichi Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:17
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C23; C23C; C23C8/00; C23C8/06; C23C8/08; C23C8/10; C23C8/16; C30; C30B; C30B33/00; C30B33/005; F; F22; F22B; F22B27/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
331 words
An apparatus for reacting a semiconductor wafer with steam, comprising: a reaction tube for placing the semiconductor wafer therein, said reaction tube having a free end and a coupling end and being disposed to be substantially horizontal; a pipe, coupled to said coupling end of said reaction tube, for communicating with an interior said reaction tube; pure water supply means coupled to said pipe for supplying water to said reaction chamber; heating means for heating said reaction tube; a first chamber defined by a first partition plate in said reaction tube, said first partition plate being disposed in said reaction tube to be spaced apart from said coupling end of said reaction tube and having a through hole, said first chamber being supplied with the pure water through said pipe, and the pure water being evaporated to generate steam by heat from said heating means; a second chamber defined between said first partition plate and a second partition plate in said reaction tube, said second partition plate being disposed downstream of said first partition plate and having a through hole, the steam which is generated in said first chamber being supplied to said second chamber through said through hole in said first partition plate, and the steam in said second chamber being heated by the heat from said heating means, thereby generating superheated steam; and a third chamber defined by said second partition plate and downstream of said second chamber in said reaction tube, and third chamber being arranged such that the semiconductor wafer may be placed therein, the superheated steam being supplied from said second chamber to said third chamber through said through hole in said second partition plate, the superheated steam being further heated in said third chamber to a sufficient temperature for a reaction with the semiconductor wafer to occur, and the superheated steam being brought into contact with a surface of the semiconductor wafer and reacted steam flowing out from said free end of said reaction tube.
Claim 2
Independent Claim
331 words
An apparatus for reacting a semiconductor wafer with steam, comprising: a reaction tube for placing the semiconductor wafer therein, said reaction tube having a free end and a coupling end and being disposed to be substantially horizontal; a pipe, coupled to said coupling end of said reaction tube, for communicating with an interior said reaction tube; pure water supply means coupled to said pipe for supplying water to said reaction chamber; heating means for heating said reaction tube; a first chamber defined by a first partition plate in said reaction tube, said first partition plate being disposed in said reaction tube to be spaced apart from said coupling end of said reaction tube and having a through hole, said first chamber being supplied with the pure water through said pipe, and the pure water being evaporated to generate steam by heat from said heating means; a second chamber defined between said first partition plate and a second partition plate in said reaction tube, said second partition plate being disposed downstream of said first partition plate and having a through hole, the steam which is generated in said first chamber being supplied to said second chamber through said through hole in said first partition plate, and the steam in said second chamber being heated by the heat from said heating means, thereby generating superheated steam; and a third chamber defined by said second partition plate and downstream of said second chamber in said reaction tube, and third chamber being arranged such that the semiconductor wafer may be placed therein, the superheated steam being supplied from said second chamber to said third chamber through said through hole in said second partition plate, the superheated steam being further heated in said third chamber to a sufficient temperature for a reaction with the semiconductor wafer to occur, and the superheated steam being brought into contact with a surface of the semiconductor wafer and reacted steam flowing out from said free end of said reaction tube.
Claim 3
Dependent Claim
99 words
An apparatus according to claim 1, wherein said heating means comprises an electric furnace heater for heating said reaction tube such that a first area of said reaction tube is heated at a temperature falling within a range between 100° C. and 500° C., a second area thereof is heated at a temperature falling within a range between 800° C. and a reaction temperature, and a third area thereof is heated at a temperature falling within a range between 1,000° C. and 1,100° C., said first, second and third areas corresponding to said first, second and third chamber, respectively.
Claim 4
Dependent Claim
33 words
An apparatus according to claim 1, wherein said second partition plate has a plurality of through holes for bringing the superheated steam into uniform contact with the semiconductor wafer in said third chamber.
Claim 5
Dependent Claim
35 words
An apparatus according to claim 3, wherein said second partition plate is arcuated and each of said plurality of through holes in said second partition plate extends along radial direction of said second partition plate.
Claim 6
Dependent Claim
28 words
An apparatus according to claim 1, wherein said first chamber is divided into at least two subchambers by at least one additional partition plate having a through hole.
Claim 7
Dependent Claim
26 words
An apparatus according to claim 1, further including means for supplying the pure water to said first chamber through said pipe at a predetermined flow rate.
Claim 8
Dependent Claim
24 words
An apparatus according to claim 1, wherein a cap having a tube-like distal end is mounted on said free end of said reaction tube.
Claim 9
Dependent Claim
37 words
An apparatus according to claim 1, further including a soaking tube disposed between said heating means and said reaction tube so as to uniformly heat at least said third chamber by the heat from said heating means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-14 | 1989-04-15 | 1989-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-14 | 1993-04-15 | 1993-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-14 | 1997-04-15 | 1997-10-15 | $7700.00 | Window Closed / Lapsed |