US4542401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with sprayed metal layer
Assignee: Toshiba Corp
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Filing: 1983-12-22
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Granted: 1985-09-17
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Expires: 2003-12-22
Abstract
Abstract A semiconductor device has a sprayed metal layer formed by a method such as plasma spraying on a metal substrate of a material such as aluminum, and a semiconductor element attached to the sprayed metal layer by soldering. A sprayed insulting layer may be interposed between the sprayed metal layer and the metal substrate for electrically insulating the element from the substrate.
Inventors
- 👤 Toshinobu Sekiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:27
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W40/00; H10W40/20; H10W40/22; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/321; H10W72/322; H10W72/351; H10W72/352; H10W72/381; H10W90/00; H10W90/701; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
99 words
A semiconductor device with a semiconductor element soldered to a metal substrate, comprising: a sprayed insulating layer which is directly attached to a predetermined part of the surface of said metal substrate and which consists of ceramics or plastics, the thickness of the sprayed insulating layer being from 0.05 to 0.4 mm; a sprayed metal layer which is directly attached to said sprayed insulating layer and which consists of one metal selected from the group consisting of copper, nickel, tin and silver; and a solder layer directly attached to said sprayed metal layer for securely attaching said semiconductor element.
Claim 2
Dependent Claim
99 words
A semiconductor device with a semiconductor element soldered to a metal substrate, comprising: a sprayed insulating layer which is directly attached to a predetermined part of the surface of said metal substrate and which consists of ceramics or plastics, the thickness of the sprayed insulating layer being from 0.05 to 0.4 mm; a sprayed metal layer which is directly attached to said sprayed insulating layer and which consists of one metal selected from the group consisting of copper, nickel, tin and silver; and a solder layer directly attached to said sprayed metal layer for securely attaching said semiconductor element.
Claim 3
Dependent Claim
202 words
A semiconductor device having at least two semiconductor elements soldered to a metal substrate, comprising: a first semiconductor element soldered to the metal substrate by means of layers consisting essentially of a sprayed insulating layer, a first sprayed metal layer and a first solder layer, said sprayed insulating layer being directly attached to a predetermined part of the surface of said metal substrate, consisting of ceramics or plastics, and having a thickness of 0.05 to 0.4 mm, said first sprayed metal layer being directly attached to said sprayed insulating layer and consisting of one metal selected from the group consisting of copper, nickel, tin and silver, and said solder layer being directly attached to said sprayed metal layer for securely attaching said first semiconductor element; and a second semiconductor element soldered to the metal substrate by means of layers consisting essentially of a second sprayed metal layer and a second solder layer directly attached to said second sprayed metal layer for securely attaching said second semiconductor element, said second sprayed metal layer being directly attached to a predetermined part of the surface of said metal substrate and consisting of one metal selected from the group consisting of copper, nickel, tin and silver.
Claim 4
Dependent Claim
202 words
A semiconductor device having at least two semiconductor elements soldered to a metal substrate, comprising: a first semiconductor element soldered to the metal substrate by means of layers consisting essentially of a sprayed insulating layer, a first sprayed metal layer and a first solder layer, said sprayed insulating layer being directly attached to a predetermined part of the surface of said metal substrate, consisting of ceramics or plastics, and having a thickness of 0.05 to 0.4 mm, said first sprayed metal layer being directly attached to said sprayed insulating layer and consisting of one metal selected from the group consisting of copper, nickel, tin and silver, and said solder layer being directly attached to said sprayed metal layer for securely attaching said first semiconductor element; and a second semiconductor element soldered to the metal substrate by means of layers consisting essentially of a second sprayed metal layer and a second solder layer directly attached to said second sprayed metal layer for securely attaching said second semiconductor element, said second sprayed metal layer being directly attached to a predetermined part of the surface of said metal substrate and consisting of one metal selected from the group consisting of copper, nickel, tin and silver.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1 or 2, wherein the metal substrate is made of aluminum.
References Cited (Backward Citations)
US3290564A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-16 | 1989-03-18 | 1989-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-16 | 1993-03-18 | 1993-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-16 | 1997-03-18 | 1997-09-17 | $7700.00 | Window Closed / Lapsed |