Monolithic integrated circuit device including AC negative feedback type high frequency amplifier circuit

Claim 2

A monolithic integrated circuit device including an AC negative feedback type high frequency amplifier circuit comprising: a substrate on which said monolithic integrated circuit device is formed; and an AC negative feedback circuit for said high frequency amplifier circuit including a semiconductor impedance element having a junction capacitance of a diode supplied with a reverse bias voltage and connected to an external terminal on said substrate, which is connected to a variable control means for adjusting an amount of AC feedback of said high frequency amplifier circuit.

Claim 3

The monolithic integrated circuit device according to claim 1 wherein said high frequency amplifier circuit comprises a transistor with its base electrode supplied with an input signal, a load resistor connected between a first source of reference voltage and a collector electrode of said transistor, a DC negative feedback resistor connected between a second source of reference voltage and an emitter electrode of said transistor and a diode constituting said AC negative feedback circuit, one end of said diode being connected to the emitter electrode of said transistor and the other end of said diode being connected to said variable control means through said external terminal.

Claim 4

The monolithic integrated circuit device according to claim 1 wherein said high frequency amplifier circuit comprises: two sets of serially connected members, each including a load resistor, a transistor and a DC negative feedback resistor; a current source commonly connected to one ends of respective DC negative feedback resistors; and two diodes with one ends being connected to respective emitter electrodes of said transistors, the other ends of the diodes being commonly connected to said variable control means through said external terminal.

Claim 5

The monolithic integrated circuit device according to claim 1 wherein said diode is connected to said high frequency amplifier circuit via a capacitor for interrupting direct current.

Claim 6

The monolithic integrated circuit device according to claim 5 which further comprises a resistor connected between a juncture between said diode and said capacitor and said external terminal.

Claim 7

The monolithic integrated circuit device according to claim 5 wherein said high frequency amplifier circuit comprises: a transistor having base, collector and emitter electrodes; means for applying an input signal to said base electrode; a load resistor connected between a first source of reference voltage and the collector electrode of said transistor; and a DC negative feedback resistor connected between a second source of reference voltage and said emitter electrode, and wherein said capacitor for interrupting direct current is connected to said emitter electrode, and the other end of said diode is connected to said second source of reference voltage.

Claim 8

The monolithic integrated circuit device according to claim 5 wherein said high frequency amplifier circuit comprises; two sets of serially connected members, each comprising a load resistor, a transistor and a DC negative feedback resistor; and a current source connected between commonly connected one ends of respective DC negative feedback resistors and a second source of reference voltage, and wherein said AC negative feedback circuit comprises two sets each including a capacitor for interrupting direct current, a diode and a resistor, one ends of different DC interrupting capacitors are connected to emitter electrodes of said transistors, and one ends of said diodes are commonly connected to said second source of reference voltage.

Claim 9

The monolithic integrated circuit device according to claim 1 wherein said semiconductor impedance element comprises a diffusion capacity between base and emitter electrodes of a transistor.

Claim 10

The monolithic integrated circuit device according to claim 1 wherein said semiconductor impedance element comprises a diffusion capacitance between base and collector electrodes of a transistor.

Claim 11

The monolithic integrated circuit device according to claim 1 wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes and a base electrode; and a variable current source, one output electrodes of said first and second transistors are commonly connected to a first source of reference voltage, the output electrodes of said first and second transistors are commonly connected to said variable current source, said variable current source is connected to said external terminal connected to said variable control means, the base electrode of said first transistor is connected to said high frequency circuit, a bias source is connected to the base electrode of said second transistor such that the same operates as a base grounded type, and wherein said semiconductor impedance element is constituted by a diffusion capacitances between base and emitter electrodes of said first and second transistors.

Claim 12

The monolithic integrated circuit device according to claim 10 wherein said variable current source is constituted by a transistor.

Claim 13

The monolithic integrated circuit device according to claim 1 wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes and a base electrode, one output electrodes of said first and second electrodes are commonly connected to a first source of reference voltage, the other output electrodes of said first and second transistors are commonly connected to a variable current source, said variable current source is connected to said external terminal connected to said variable control means, the base electrode of said first transistor is connected to said high frequency circuit, a bias source is connected to the base electrode of said second transistor such that the same operates as a base grounded type, and wherein said semiconductor impedance element is constituted by diffusion capacitances of the base and collector electrodes of said first and second transistors.

Claim 14

The monolithic integrated circuit device according to claim 11 wherein said variable current source comprises a transistor.

Claim 15

The monolithic integrated circuit device according to claim 1 wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes and a base electrode; and a current source, one output electrodes of the first and second transistors are commonly connected to a source of reference voltage, the other output electrodes of the first and second transistors are commonly connected to said current source, the base electrode of said first transistor is connected to a high frequency circuit, the base electrode of said second transistor is connected to said external terminal connected to said variable control means, and said semiconductor impedance element is constituted by diffusion capacitances between base and emitter electrodes of said first and second transistors.

Claim 16

The monolithic integrated circuit device according to claim 14 wherein said current source is constituted by a transistor.

Claim 17

The monolithic integrated circuit device according to claim 1 wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes and a base electrode; and a current source, one output electrodes of the first and second transistors are commonly connected to a source of reference voltage, the other output electrodes of said first and second transistors are commonly connected to a current source, the base electrode of said first transistor is connected to a high frequency circuit, the base electrode of said second transistor is connected to said external terminal connected to said variable control means, and said semiconductor impedance means is constituted by diffusion capacitances between base and collector electrodes of said first and second transistors.

Claim 18

The monolithic integrated circuit according to claim 1 wherein said AC negative feedback circuit includes: first and second transistors and a resistor, an output electrode of said first transistor and said resistor which are connected in series between first and second voltage sources, a base electrode of said first transistor is connected to a high frequency circuit, an output electrode of said second transistor is connected in parallel with said resistor, and a base electrode of said second transistor is connected to said external terminal connected to said variable control means.

Claim 19

The monolithic integrated circuit device according to claim 8 wherein said high frequency amplifier circuit comprises: two sets of serially connected members each set including a load resistor, a transistor and a DC negative feedback resistor; and a current source connected between a junction between respective DC negative feedback resistors and a second source of reference voltage, and wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes, and a variable current source, one output electrodes of said first and second transistors are commonly connected to a first source of reference voltage, the other output electrodes of said first and second transistors are commonly connected to a variable current source which is connected to said external terminal connected to said variable control means, and base electrodes of said first and second transistors are connected between said transistor of said high frequency amplifier circuit and said DC negative feedback resistor.

Claim 20

The monolithic integrated circuit device acccording to claim 18 wherein said variable current source comprises a transistor.

Claim 21

The monolithic integrated circuit device according to claim 9 wherein said high frequency amplifier circuit comprises: two sets of serially connected members each set including a load resistor, a transistor and a DC negative feedback resistor; and a current source connected between a junction between respective DC negative feedback resistors and a second source of reference voltage, and wherein said AC negative feedback circuit comprises: first and second transistors each having a plurality of output electrodes and a base electrode; and a variable current source, one output electrodes of said first and second transistors are commonly connected to a first source of reference voltage, the other output electrodes of said first and second of transistors are commonly connected to said variable current source which is connected to said external terminal connected to said variable control means, and the base electrodes of said first and second transistors are connected between the transistor of said high frequency amplifier circuit and said DC negative feedback resistor.

Claim 22

The monolithic integrated circuit device according to claim 20 wherein said variable current source comprises a transistor.

Claim 23

The monolithic integrated circuit device according to claim 21 wherein said AC negative feedback circuit comprises: a diode and a variable current source which are connected in series between first and second voltage sources; and a capacitor with one and connected to a junction between said diode and said variable current source and the other and connected to said high frequency amplifier circuit, and wherein said variable current source is connected to said external terminal connected to said variable control device.

Claim 24

The monolithic integrated circuit device according to claim 22 wherein said high frequency amplifier circuit comprises: a transistor including base collector and emitter electrodes; means for applying an input signal to said base electrode; a load resistor connected between said first source of reference voltage and said collector electrode; and a DC negative feedback resistor connected between a second source of reference voltage and said emitter electrode, and wherein said capacitor in said AC negative feedback circuit is connected to said emitter electrode.

Claim 25

The monolithic integrated circuit device according to claim 23 wherein said high frequency amplifier circuit comprises: two sets of serially connected members each including a load resistor, a transistor and a DC negative feedback resistor; a current source conducted between commonly connected one ends of respective DC negative feedback resistors and second source of reference voltage, and wherein said AC negative feedback circuit comprises: first and second capacitors; first and second diodes; and first and second variable current sources, said first diode, said first variable current source and said second diode are connected in series between a first source of reference voltage and said second voltage source, one ends of said first and second capacitors are connected to the junctions between said first and second diodes and between said first and second variable current sources respectively, the other ends of said first and second capacitors are connected to junctions between said transistors and said DC negative feedback resistors respectively, and said first and second variable current source are commonly connected to said external terminal connected to said variable control means.

Claim 26

A monolithic integrated circuit device including an AC negative feedback type high frequency amplifier circuit comprising: a substrate on which said monolithic integrated circuit device is formed; and an AC negative feedback circuit for said high frequency amplifier circuit including a semiconductor impedance element, wherein said element is a capacitance between a base region of the element and a region neighboring the base region and connected to an external terminal on said substrate, which is connected to a variable control means for adjusting an amount of AC feedback of said high frequency amplifier circuit.

Claim 27

A monolithic integrated circuit device including an AC negative feedback type high frequency amplifier circuit comprising: a substrate on which said monolithic integrated circuit device is formed; and an AC negative feedback circuit for said high frequency amplifier circuit including a semiconductor impedance element, wherein said element is a capacitance between a base region of the element and a region neighboring the base region and connected to an external terminal on said substrate, which is connected to a variable control means for adjusting an amount of AC feedback of said high frequency amplifier circuit.

Claim 28

A monolithic integrated circuit device including an AC negative feedback type high frequency amplifier circuit comprising: a substrate on which said monolithic integrated circuit device is formed; and an AC negative feedback circuit for said high frequency amplifier circuit including a semiconductor impedance element, wherein said element is a differentiated resistance of a diode, connected to an external terminal on said substrate, which is connected to a variable control means for adjusting an amount of AC feedback of said high frequency amplifier circuit.

Claim 29

A monolithic integrated circuit device including an AC negative feedback type high frequency amplifier circuit comprising: a substrate on which said monolithic integrated circuit device is formed; and an AC negative feedback circuit for said high frequency amplifier circuit including a semiconductor impedance element, wherein said element is a differentiated resistance of a diode, connected to an external terminal on said substrate, which is connected to a variable control means for adjusting an amount of AC feedback of said high frequency amplifier circuit.