Singly terminated distributed amplifier

Claim 2

An integrated circuit comprising: a. a plurality of amplifying means for amplifying an input signal and mounted on a semiconductor substrate; and b. means for interconnection of said amplifying means, each to the others, to form an amplification stage, said means for interconnection having a dissimilar susceptance and reactance for each connection from the susceptance and reactance of the other connection means, the dissimilarity a function of the total number of amplifying means in said stage and resulting in substantially all of the output of said amplifying means being provided to a singly terminated output.

Claim 3

An integrated circuit as in claim 1 wherein said input signal has a frequency from 0 to 20 Gigahertz.

Claim 4

An integrated circuit as in claim 1 wherein said means for interconnection comprises metal oxide capacitors.

Claim 5

An integrated circuit as in claim 1 wherein said means for interconnection comprises wire bonding.

Claim 6

An integrated circuit as in claim 1 wherein said means for interconnection comprises photolithographic metalization.

Claim 7

An integrated circuit as in claim 1 wherein said means for amplifying comprises N-channel field effect transistors.

Claim 8

A distributed amplifier having a singly terminated output comprising: a. an integrated circuit substrate; b. a plurality of active amplifier devices mounted on said substrate with electrical interconnection, each to the others, to form a distributed amplifier; and c. said electrical interconnection having a reactance difference between said active devices resulting in substantially all of the amplifier power being output to said singly terminated output.

Claim 9

A distributed amplifier having a singly terminated output comprising: a. an integrated circuit substrate; b. a plurality of active amplifier devices mounted on said substrate with electrical interconnection, each to the others, to form a distributed amplifier; and c. said electrical interconnection having a reactance difference between said active devices resulting in substantially all of the amplifier power being output to said singly terminated output.

Claim 10

A traveling wave amplifier comprising: a. a plurality of amplifying devices on a single substrate, each of said devices interconnected with the others in a phase shifting parallel configuration and to a singly terminated output; and b. a phase difference in said interconnections, each from the others, such that substantially all of the power from said devices is output to said singly terminated output, said phase difference having a capacitive susceptance increasing toward the output as a direct function of the number of amplifying devices, from one device to the next, and also having inductive reactance decreasing toward the output as a direct function of the number of amplifying devices, from one device to the next.

Claim 11

A traveling wave amplifier comprising: a. a plurality of amplifying devices on a single substrate, each of said devices interconnected with the others in a phase shifting parallel configuration and to a singly terminated output; and b. a phase difference in said interconnections, each from the others, such that substantially all of the power from said devices is output to said singly terminated output, said phase difference having a capacitive susceptance increasing toward the output as a direct function of the number of amplifying devices, from one device to the next, and also having inductive reactance decreasing toward the output as a direct function of the number of amplifying devices, from one device to the next.

Claim 12

An amplifier as in claim 8 wherein said interconnections comprise metal oxide capacitors.

Claim 13

An amplifier as in claim 8 wherein said interconnections comprise wire bonding.

Claim 14

An amp1ifier as in claim 8 wherein said interconnections comprise photolithographic metalization.

Claim 15

An amplifier as in claim 8 wherein said amplifying devices comprise N-channel field effect transistors.