US4539580A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High density integrated circuit device with MOS transistor and semiconductor region having potential wells
Assignee: Toshiba Corp
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Filing: 1982-09-16
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Granted: 1985-09-03
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Expires: 2002-09-16
Abstract
Abstract A semiconductor device includes a dynamic memory area formed in a semiconductor substrate and set in an inequilibrium potential state, and a plurality of MOS transistors which emit minority carriers or more than a predetermined number into said semiconductor substrate during operation in a saturation region. Each of the MOS transistors is so arranged that a prolonged line extending in a direction from the source region to the drain region may cross the dynamic memory area.
Inventors
- 👤 Junichi Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:17
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D62/00; H10D62/40; H10D62/405
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
A semiconductor device comprising: a semiconductor substrate; a semiconductor region formed within said semiconductor substrate and having a potential locally susceptible to change by minority carriers; and at least one MOS transistor having source and drain regions and which emits minority carriers of more than a predetermined number into said semiconductor substrate during operation in a saturation region, wherein said semiconductor region is arranged in an area defined by two boundary lines which start from said MOS transistor and form angles of substantially ±45° with respect to a line connecting said source and drain regions, and wherein the material connecting said semiconductor region and said MOS transistor is semiconductor material of uniform conductivity type.
Claim 2
Dependent Claim
114 words
A semiconductor device comprising: a semiconductor substrate; a semiconductor region formed within said semiconductor substrate and having a potential locally susceptible to change by minority carriers; and at least one MOS transistor having source and drain regions and which emits minority carriers of more than a predetermined number into said semiconductor substrate during operation in a saturation region, wherein said semiconductor region is arranged in an area defined by two boundary lines which start from said MOS transistor and form angles of substantially ±45° with respect to a line connecting said source and drain regions, and wherein the material connecting said semiconductor region and said MOS transistor is semiconductor material of uniform conductivity type.
Claim 3
Dependent Claim
40 words
A semiconductor device according to claim 1, wherein said semiconductor region is of substantially rectangular shape, and said at least one MOS transistor is arranged with said two boundary lines being substantially parallel to two sides of said semiconductor region.
Claim 4
Dependent Claim
30 words
A semiconductor device according to claim 2, wherein said at least one MOS transistor is arranged at a distance of not more than 50 μm from said said semiconductor region.
Claim 5
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said at least one MOS transistor is arranged at a distance of not more than 50 μm from said semiconductor region.
Claim 6
Dependent Claim
123 words
A semiconductor device comprising: a semiconductor substrate; a semiconductor region formed within said substrate and having a potential locally susceptible to change by minority carriers; and at least one MOS transistor having source and drain regions and which emits minority carriers of more than a predetermined number into said semiconductor substrate during operation in a saturation region, wherein said semiconductor region is of substantially rectangular shape and is arranged in an area defined by two boundary lines which start from said MOS transistor and form angles of substantially ±45° with respect to a line connecting said source and drain regions, said at least one MOS transistor being arranged with said two boundary lines being substantially parallel to two sides of said semiconductor region.
Claim 7
Dependent Claim
123 words
A semiconductor device comprising: a semiconductor substrate; a semiconductor region formed within said substrate and having a potential locally susceptible to change by minority carriers; and at least one MOS transistor having source and drain regions and which emits minority carriers of more than a predetermined number into said semiconductor substrate during operation in a saturation region, wherein said semiconductor region is of substantially rectangular shape and is arranged in an area defined by two boundary lines which start from said MOS transistor and form angles of substantially ±45° with respect to a line connecting said source and drain regions, said at least one MOS transistor being arranged with said two boundary lines being substantially parallel to two sides of said semiconductor region.
Claim 8
Dependent Claim
29 words
A semiconductor device according to claim 5, wherein said at least one MOS transistor is arranged at a distance of not more than 50 μm from said semiconductor region.
Claim 9
Dependent Claim
31 words
A semiconductor device according to claim 5 or 6, wherein said at least one MOS transistor is arranged at a distance of not more than 50 μm from said semiconductor region.
References Cited (Backward Citations)
US4163245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-02 | 1989-03-04 | 1989-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-02 | 1993-03-04 | 1993-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-02 | 1997-03-04 | 1997-09-03 | $7700.00 | Window Closed / Lapsed |