Thick film resistor compositions

Claim 2

A resistor composition which is an admixture of finely divided particles of (a) 4-75% wt. ruthenium-based conductive materials, (b) 96-25% wt. nonconductive glass, and (c) 0.05-15% wt. Co 2 RuO 4 dispersed in organic medium.

Claim 3

The composition of claim 1 in which the ruthenium-based conductive material is selected from the group consisting of RuO 2 , compounds corresponding to the formula (M c Bi 2-c )(M' d Ru 2-d )O 7-e and mixtures thereof, wherein M is at least one of the group consisting of yttrium, thallium, indium, cadmium, lead and the rare earth metals of atomic number 57-71, inclusive: M' is at least one of platinum, titanium, chromium, rhodium and antimony; c is a number in the range 0 to 2; d is a number in the range 0 to about 0.5, provided that d is a number in the range 0 to 1 when M' is rhodium or more than one of platinum, and titanium; and e is a number in the range 0 to 1, being at least equal to about c/2 when M is divalent lead or cadmium.

Claim 4

The composition of claim 2 in which the conductor material is Bi 2 Ru 2 O 7 .

Claim 5

The composition of claim 2 in which the conductor material is BiPbRu 2 O 6 .5.

Claim 6

The composition of claim 2 in which the conductor material is Bi 0 .2 Pb 1 .8 Ru 2 O 6 .1.

Claim 7

The composition of claim 2 in which the conductor material is Pb 2 Ru 2 O 6 .

Claim 8

A resistor comprising a thin layer of the dispersion of claim 1 which has been fired to volatilize the organic medium and to effect liquid phase sintering of the glass.

Claim 9

The method of forming a resistor comprising (a) forming a patterned thin layer of the dispersion of claim 1 drying the layer and (c) firing the dried layer to effect volatilization of the organic medium and to effect liquid phase sintering of the glass.