US4536231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polysilicon thin films of improved electrical uniformity
Assignee: Intersil Corp
•
Filing: 1984-05-22
•
Granted: 1985-08-20
•
Expires: 2004-05-22
Abstract
Abstract A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.
Inventors
- 👤 Alan J. Kasten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:54
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/30; H10P32/302; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
95 words
A polysilicon thin film semiconductor device precursor of reduced anisotropy, comprising: a substrate with a polysilicon thin film deposited thereover which film has been scanned a first time by a laser beam in a first direction to produce relatively long, thin crystallites having a long axis oriented generally parallel to the direction of said first scan, and scanned a second time by a laser beam in a direction at a bias to said first direction, whereby the recrystallized crystallites of the polysilicon thin film are caused to grow in the direction of said second scanning.
Claim 2
Dependent Claim
95 words
A polysilicon thin film semiconductor device precursor of reduced anisotropy, comprising: a substrate with a polysilicon thin film deposited thereover which film has been scanned a first time by a laser beam in a first direction to produce relatively long, thin crystallites having a long axis oriented generally parallel to the direction of said first scan, and scanned a second time by a laser beam in a direction at a bias to said first direction, whereby the recrystallized crystallites of the polysilicon thin film are caused to grow in the direction of said second scanning.
Claim 3
Dependent Claim
31 words
The polysilicon thin film semiconductor device precursor of claim 1, wherein sad second scanning of said polysilicon film is at an angle of 90° to the direction of said first scanning.
Claim 4
Dependent Claim
46 words
The polysilicon thin film semiconductor device precursor of claim 1, wherein the resistance across said polysilicon thin film in a first direction is substantially equal to the resistance of the polysilicon thin film in the direction at right angle to the direction of said first resistance.
Claim 5
Dependent Claim
25 words
The polysilicon thin film semiconductor device precursor of claim 3, wherein the difference between said first and said second resistances is no greater than 2%.
Claim 6
Dependent Claim
92 words
A polysilicon thin film semiconductor device precursor of reduced anisotropy, produced by a process which includes scanning the precursor with a laser beam in a first direction, followed by scanning the procursor a second time in a second direction at a bias to said first direction, comprising: a substrate with a polysilicon thin film deposited thereover, said film comprising recrystallized crystallites having a first angle of orientation generally aligned in the direction of said first scan, and having a second angle of orientation generally aligned in the direction of said second scan.
Claim 7
Dependent Claim
92 words
A polysilicon thin film semiconductor device precursor of reduced anisotropy, produced by a process which includes scanning the precursor with a laser beam in a first direction, followed by scanning the procursor a second time in a second direction at a bias to said first direction, comprising: a substrate with a polysilicon thin film deposited thereover, said film comprising recrystallized crystallites having a first angle of orientation generally aligned in the direction of said first scan, and having a second angle of orientation generally aligned in the direction of said second scan.
References Cited (Backward Citations)
US4315130A
Cited
US4309224A
Cited
US4198246A
Cited
JPS55148431A
Cited
US4309225A
Cited
US4394191A
Cited
US4372990A
Cited
US4330363A
Cited
JPS5797620A
Cited
US4406709A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-19 | 1989-02-18 | 1989-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-19 | 1993-02-18 | 1993-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-19 | 1997-02-18 | 1997-08-20 | $7700.00 | Window Closed / Lapsed |