Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes

Claim 1

A process for photopatterning a polymethylmethacrylate resist on a silicon substrate which comprises (1) spin casting onto a silicon substrate, a polymethylmethacrylate resin composition comprising (A) 100 parts of an inert organic solvent (B) 1 to 15 parts of a polymethylmethacrylate and (C) 0.01 to 1.0 parts of a cinnamic acid derivative included within the formula ##STR4## (2) baking the applied resist composition of (1) to a temperature of 100° to 200° C. to produce a polymethylmethacrylate resist layer having a thickness of from 1 to 3 microns, (3) applying onto the layer of (2) a polynovolak resist to a thickness of from about 0.2 to 1.0 microns, (4) baking the resist layer of (3) to a temperature of 140° to 200° C., (5) exposing the upper resist layer of (4) to patterned UV light at about 350 to 440 nm to produce a latent positive image in the resist, (6) developing the resist of (7) and thereafter baking the resulting portable conformable mask, (7) exposing the composite of the portable conformable mask and the polymethylmethacrylate resist layer to UV light in the range of 190 to 250 nm to produce a positive image of the portable conformable mask, and (8) developing the resulting polymethylmethacrylate resist, where R and R 1 are selected from hydrogen or C.sub.(1-8) alkyl, Q is --O-- or --N--, X is selected from nitrile and halogen, R 2 is a monovalent group selected from ##STR5## polyalkylene glycol, polyalkylene amine and polyalkylene ester and R 3 is a C.sub.(1-8) alkylene radical or C.sub.(6-13) aryl radial.