US4534840A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a compound semiconductor film
Assignee: Konica Minolta Inc
•
Filing: 1983-09-16
•
Granted: 1985-08-13
•
Expires: 2003-09-16
Abstract
Abstract In the case of forming a single-layered or multilayered compound semiconductor film such as a GaAs thin film for a semiconductor laser, an EL light-emission element and the like in a molecular beam epitaxis method, a vacuum deposition method or a sputtering method, the method of the invention is to prevent the compounds from deteriorating and decomposing by making activated hydrogen coexist therein.
Inventors
- 👤 Masanari Shindo
- 👤 Shigeru Sato
- 👤 Akinari Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:10
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0047; C23C14/0057; C30B29/00; C30B29/10; C30B29/40; C30B29/46; C30B29/48; H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3424; H10P14/3428; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
31 words
A vacuum deposition method for forming a compound semiconductor film comprising, depositing compound semiconductor film forming materials on a substrate in the presence of sufficient ionized hydrogen to react with impurities.
Claim 2
Dependent Claim
31 words
A vacuum deposition method for forming a compound semiconductor film comprising, depositing compound semiconductor film forming materials on a substrate in the presence of sufficient ionized hydrogen to react with impurities.
Claim 3
Dependent Claim
39 words
The method for forming a compound semiconductor film of claim 1, wherein said compound semiconductor film forming materials are selected from the group consisting of compounds in combination of the periodic table's Groups III-V, Groups II-VI and Groups IV-VI.
Claim 4
Dependent Claim
47 words
The method for forming a compound semiconductor film of claim 1, wherein said compound semiconductor film forming materials are deposited on the substrate in accordance with a method selected from the group consisting of a molecular beam epitaxis method, a vacuum deposition method, and a sputtering method.
Claim 5
Dependent Claim
47 words
The method for forming a compound semiconductor film of claim 2, wherein said compound semiconductor film forming materials are deposited on the substrate in accordance with a method selected from the group consisting of a molecular beam epitaxis method, a vacuum deposition method, and a sputtering method.
Claim 6
Dependent Claim
28 words
The method for forming a compound semiconductor film of claim 1, wherein a multilayered compound semiconductor film of different compounds is formed by repeated application of the method.
Claim 7
Dependent Claim
28 words
The method for forming a compound semiconductor film of claim 2, wherein a multilayered compound semiconductor film of different compounds is formed by repeated application of the method.
Claim 8
Dependent Claim
37 words
The method for forming a compound semiconductor film of claim 1, wherein the film for an EL element is formed by the method selected from the group consisting of a vacuum deposition method and a sputtering method.
Claim 9
Dependent Claim
37 words
The method for forming a compound semiconductor film of claim 2, wherein the film for an EL element is formed by the method selected from the group consisting of a vacuum deposition method and a sputtering method.
Claim 10
Dependent Claim
27 words
The method for forming a compound semiconductor film of claim 1, wherein said substrate is maintained at a temperature of from about 200° C. to 1000° C.
Claim 11
Dependent Claim
35 words
The method for forming a compound semiconductor film of claim 1, wherein said product of the reaction of said impurities and said ionized hydrogen is removed from a chamber in which the reaction takes place.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-12 | 1989-02-11 | 1989-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-12 | 1993-02-11 | 1993-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-12 | 1997-02-11 | 1997-08-13 | $7700.00 | Window Closed / Lapsed |