US4533450A
Expired / Lapsed
US
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Control of the hydrogen bonding in reactively sputtered amorphous silicon
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1984-09-06
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Granted: 1985-08-06
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Expires: 2004-09-06
Abstract
Abstract A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.
Inventors
- 👤 Theodore D. Moustakas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:56
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0057; H; H10; H10F; H10F71/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
75 words
A method for controlling the silicon to hydrogen bonding in sputtered amorphous silicon comprising reactively sputtering a layer of amorphous silicon in a partial pressure of hydrogen and argon while concurrently applying a predetermined positive DC voltage bias to the sputtered film to produce controlled monohydride and polyhydride bond density in sputtered amorphous silicon films, wherein a positive DC voltage bias is applied to the film to decrease the polyhydride bond density of said film.
Claim 2
Independent Claim
75 words
A method for controlling the silicon to hydrogen bonding in sputtered amorphous silicon comprising reactively sputtering a layer of amorphous silicon in a partial pressure of hydrogen and argon while concurrently applying a predetermined positive DC voltage bias to the sputtered film to produce controlled monohydride and polyhydride bond density in sputtered amorphous silicon films, wherein a positive DC voltage bias is applied to the film to decrease the polyhydride bond density of said film.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said DC bias voltage ranges from above about ground potential to about 80 volts.
Claim 4
Dependent Claim
34 words
The method of claim 1 wherein said process of sputtering is further defined as RF sputtering from a silicon cathode onto a biased anode having an anode to cathode spacing of about 4.5 cm.
Claim 5
Independent Claim
103 words
A method for producing a photoconductive amorphous silicon film having increased monohydride bond density comprising reactively sputtering a layer of amorphous siilicon onto a substrate maintained at a temperature ranging from about 200° C. to about 400° C. and also maintained at a voltage ranging from above about ground potential to about a positive 80 volts, said sputtering being accomplished in partial pressures of argon and hydrogen ranging from about 5m Torr to about 50m Torr and from about 1×10 -4 Torr to about 5×10 -3 Torr respectively and having an RF sputtering power of between about 100 watts and about 500 watts.
Claim 6
Independent Claim
103 words
A method for producing a photoconductive amorphous silicon film having increased monohydride bond density comprising reactively sputtering a layer of amorphous siilicon onto a substrate maintained at a temperature ranging from about 200° C. to about 400° C. and also maintained at a voltage ranging from above about ground potential to about a positive 80 volts, said sputtering being accomplished in partial pressures of argon and hydrogen ranging from about 5m Torr to about 50m Torr and from about 1×10 -4 Torr to about 5×10 -3 Torr respectively and having an RF sputtering power of between about 100 watts and about 500 watts.
Claim 7
Dependent Claim
23 words
The method of claim 4 wherein said partial pressure of argon ranges from between about 5 m Torr and about 20 m Torr.
Claim 8
Dependent Claim
15 words
The method of claim 5 wherein said partial pressure of argon is about 15m Torr.
Claim 9
Dependent Claim
25 words
The method of claim 4 wherein said RF sputtering power is applied to a cathode electrode having cathode to anode spacing of about 4.5 cm.
Claim 10
Dependent Claim
18 words
The method of claim 7 wherein said cathode comprises a polysilicon target being about five inches in diameter.
Claim 11
Dependent Claim
56 words
In the biased reactive sputtering of amorphous silicon hydride the method comprising applying a predetermined positive substrate bias concurrent with the reactive sputtering to produce controlled monohydride and polyhydride bond density in said amorphous silicon hydride, wherein a positive DC voltage bias is applied to the film to decrease the polyhydride bond density of said film.
Claim 12
Dependent Claim
56 words
In the biased reactive sputtering of amorphous silicon hydride the method comprising applying a predetermined positive substrate bias concurrent with the reactive sputtering to produce controlled monohydride and polyhydride bond density in said amorphous silicon hydride, wherein a positive DC voltage bias is applied to the film to decrease the polyhydride bond density of said film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-05 | 1989-02-04 | 1989-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-05 | 1993-02-04 | 1993-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-05 | 1997-02-04 | 1997-08-06 | $7700.00 | Window Closed / Lapsed |