← Back to Patent Explorer
US4531173A Expired / Lapsed US ⏱️ 0.0 years remaining

Protective power foldback circuit for a power semiconductor

Assignee: Motorola Solutions Inc
•
Filing: 1983-11-02
•
Granted: 1985-07-23
•
Expires: 2003-11-02
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A protective power foldback circuit which protects a power semiconductor device from damage resulting from variations in load, supply voltage, and input drive power is disclosed. When the supply voltage exceeds a certain value, the drive power to the power device is reduced in an amount greater than that produced by the excess supply voltage thereby protecting the power device from the combined effects of load, supply voltage, and drive power.

Inventors

  • 👤 Noriyuki Yamada

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:58
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0826; H03F; H03F1/00; H03F1/52; H03K2217/00; H03K2217/0036

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 106 words
A protective power foldback circuit for a power semiconductor device which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for comparing said reference voltage and said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal.
Claim 2
Dependent Claim 106 words
A protective power foldback circuit for a power semiconductor device which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for comparing said reference voltage and said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal.
Claim 3
Dependent Claim 18 words
A protective power foldback circuit in accordance with claim 1, wherein said power semiconductor device is a transistor.
Claim 4
Dependent Claim 20 words
A protective power foldback circuit in accordance with claim 1, wherein said reference voltage is developed across a zener diode.
Claim 5
Dependent Claim 27 words
A protective power foldback circuit in accordance with claim 1, wherein said supply voltage applied to said power semiconductor device is sampled via a resistive voltage divider.
Claim 6
Dependent Claim 45 words
A protective power foldback circuit in accordance with claim 1, wherein a transistor comparator is used to compare said reference voltage, applied at one terminal, and said sampled supply voltage, applied at a second terminal, to generate a foldback control signal at a third terminal.
Claim 7
Dependent Claim 32 words
A protective power foldback circuit in accordance with claim 1, wherein said reducing means is a driver stage with variable output power responsive to supply voltage applied to said previous active stage.
Claim 8
Dependent Claim 143 words
A protective power foldback circuit for a power semiconductor device, incorporated in an output power control loop generating a control voltage, which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for sampling the control voltage; means for summing said sampled supply voltage and said sampled control voltage in predetermined proportions; means for comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal input to the power control loop.
Claim 9
Dependent Claim 143 words
A protective power foldback circuit for a power semiconductor device, incorporated in an output power control loop generating a control voltage, which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for sampling the control voltage; means for summing said sampled supply voltage and said sampled control voltage in predetermined proportions; means for comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal input to the power control loop.
Claim 10
Dependent Claim 18 words
A protective power foldback circuit in accordance with claim 7, wherein said power semiconductor device is a transistor.
Claim 11
Dependent Claim 20 words
A protective power foldback circuit in accordance with claim 7, wherein said reference voltage is developed across a zener diode.
Claim 12
Dependent Claim 29 words
A protective power foldback circuit in accordance with claim 7, wherein said supply voltage and said control voltage are sampled in predetermined proportions and summed in a resistive network.
Claim 13
Dependent Claim 44 words
A protective power foldback circuit in accordance with claim 7, wherein a transistor comparator is used to compare said reference voltage, applied at one terminal, and said summed output, applied at a second terminal, to generate a foldback control signal at a third terminal.
Claim 14
Independent Claim 94 words
A method of protective power foldback for a power semiconductor device which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; comparing said reference voltage to said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing said drive power to said power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage.
Claim 15
Independent Claim 94 words
A method of protective power foldback for a power semiconductor device which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; comparing said reference voltage to said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing said drive power to said power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage.
Claim 16
Dependent Claim 66 words
A method of protective power foldback in accordance with claim 12 wherein comparing said reference voltage to said sampled supply voltage is further comprised of the steps: applying said reference voltage to a first terminal of a transistor comparator; applying said sampled supply voltage to a second terminal of a transistor comparator; and generating a foldback control signal at a third terminal of a transistor comparator.
Claim 17
Independent Claim 134 words
A method of protective power foldback for a power semiconductor device, incorporated in an output control loop generating a control voltage, which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; sampling the control voltage; summing said sampled supply voltage and said sampled control voltage in predetermined proportions; comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of supply voltage and in response to said foldback control signal input to the power control loop.
Claim 18
Independent Claim 134 words
A method of protective power foldback for a power semiconductor device, incorporated in an output control loop generating a control voltage, which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; sampling the control voltage; summing said sampled supply voltage and said sampled control voltage in predetermined proportions; comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of supply voltage and in response to said foldback control signal input to the power control loop.
Claim 19
Dependent Claim 64 words
A method of protective power foldback in accordance with claim 14, wherein comparing said reference voltage to said summed output is further comprised of the steps: applying said reference voltage to a first terminal of a transistor comparator; applying said summed output to a second terminal of a transistor comparator; and generating a foldback control signal at a third terminal of a transistor comparator.

References Cited (Backward Citations)

US3449680A Cited
US3579089A Cited
US3641451A Cited
US3886438A Cited
US3852669A Cited
US4114108A Cited
US4378580A Cited
US4355341A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-22 1989-01-21 1989-07-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-22 1993-01-21 1993-07-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-22 1997-01-21 1997-07-23 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag