US4531173A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protective power foldback circuit for a power semiconductor
Assignee: Motorola Solutions Inc
•
Filing: 1983-11-02
•
Granted: 1985-07-23
•
Expires: 2003-11-02
Abstract
Abstract A protective power foldback circuit which protects a power semiconductor device from damage resulting from variations in load, supply voltage, and input drive power is disclosed. When the supply voltage exceeds a certain value, the drive power to the power device is reduced in an amount greater than that produced by the excess supply voltage thereby protecting the power device from the combined effects of load, supply voltage, and drive power.
Inventors
- 👤 Noriyuki Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:58
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0826; H03F; H03F1/00; H03F1/52; H03K2217/00; H03K2217/0036
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
106 words
A protective power foldback circuit for a power semiconductor device which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for comparing said reference voltage and said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal.
Claim 2
Dependent Claim
106 words
A protective power foldback circuit for a power semiconductor device which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for comparing said reference voltage and said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal.
Claim 3
Dependent Claim
18 words
A protective power foldback circuit in accordance with claim 1, wherein said power semiconductor device is a transistor.
Claim 4
Dependent Claim
20 words
A protective power foldback circuit in accordance with claim 1, wherein said reference voltage is developed across a zener diode.
Claim 5
Dependent Claim
27 words
A protective power foldback circuit in accordance with claim 1, wherein said supply voltage applied to said power semiconductor device is sampled via a resistive voltage divider.
Claim 6
Dependent Claim
45 words
A protective power foldback circuit in accordance with claim 1, wherein a transistor comparator is used to compare said reference voltage, applied at one terminal, and said sampled supply voltage, applied at a second terminal, to generate a foldback control signal at a third terminal.
Claim 7
Dependent Claim
32 words
A protective power foldback circuit in accordance with claim 1, wherein said reducing means is a driver stage with variable output power responsive to supply voltage applied to said previous active stage.
Claim 8
Dependent Claim
143 words
A protective power foldback circuit for a power semiconductor device, incorporated in an output power control loop generating a control voltage, which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for sampling the control voltage; means for summing said sampled supply voltage and said sampled control voltage in predetermined proportions; means for comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal input to the power control loop.
Claim 9
Dependent Claim
143 words
A protective power foldback circuit for a power semiconductor device, incorporated in an output power control loop generating a control voltage, which may otherwise be adversely affected by variations of load, supply voltage, and drive power thereto, comprising: means for generating a reference voltage; means for sampling the supply voltage applied to the power semiconductor device; means for sampling the control voltage; means for summing said sampled supply voltage and said sampled control voltage in predetermined proportions; means for comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and means for reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage in response to said foldback control signal input to the power control loop.
Claim 10
Dependent Claim
18 words
A protective power foldback circuit in accordance with claim 7, wherein said power semiconductor device is a transistor.
Claim 11
Dependent Claim
20 words
A protective power foldback circuit in accordance with claim 7, wherein said reference voltage is developed across a zener diode.
Claim 12
Dependent Claim
29 words
A protective power foldback circuit in accordance with claim 7, wherein said supply voltage and said control voltage are sampled in predetermined proportions and summed in a resistive network.
Claim 13
Dependent Claim
44 words
A protective power foldback circuit in accordance with claim 7, wherein a transistor comparator is used to compare said reference voltage, applied at one terminal, and said summed output, applied at a second terminal, to generate a foldback control signal at a third terminal.
Claim 14
Independent Claim
94 words
A method of protective power foldback for a power semiconductor device which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; comparing said reference voltage to said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing said drive power to said power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage.
Claim 15
Independent Claim
94 words
A method of protective power foldback for a power semiconductor device which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; comparing said reference voltage to said sampled supply voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing said drive power to said power semiconductor device by a predetermined amount greater than that produced by said excess of applied supply voltage.
Claim 16
Dependent Claim
66 words
A method of protective power foldback in accordance with claim 12 wherein comparing said reference voltage to said sampled supply voltage is further comprised of the steps: applying said reference voltage to a first terminal of a transistor comparator; applying said sampled supply voltage to a second terminal of a transistor comparator; and generating a foldback control signal at a third terminal of a transistor comparator.
Claim 17
Independent Claim
134 words
A method of protective power foldback for a power semiconductor device, incorporated in an output control loop generating a control voltage, which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; sampling the control voltage; summing said sampled supply voltage and said sampled control voltage in predetermined proportions; comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of supply voltage and in response to said foldback control signal input to the power control loop.
Claim 18
Independent Claim
134 words
A method of protective power foldback for a power semiconductor device, incorporated in an output control loop generating a control voltage, which may otherwise be adversely affected by variations in load, supply voltage, and drive power thereto comprising the steps of: generating a reference voltage; sampling the supply voltage applied to the power semiconductor device; sampling the control voltage; summing said sampled supply voltage and said sampled control voltage in predetermined proportions; comparing said summed output to said reference voltage and generating a foldback control signal in response to an excess of applied supply voltage; and reducing the drive power applied to the power semiconductor device by a predetermined amount greater than that produced by said excess of supply voltage and in response to said foldback control signal input to the power control loop.
Claim 19
Dependent Claim
64 words
A method of protective power foldback in accordance with claim 14, wherein comparing said reference voltage to said summed output is further comprised of the steps: applying said reference voltage to a first terminal of a transistor comparator; applying said summed output to a second terminal of a transistor comparator; and generating a foldback control signal at a third terminal of a transistor comparator.
References Cited (Backward Citations)
US3449680A
Cited
US3579089A
Cited
US3641451A
Cited
US3886438A
Cited
US3852669A
Cited
US4114108A
Cited
US4378580A
Cited
US4355341A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |