US4531015A
Expired / Lapsed
US
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PIN Amorphous silicon solar cell with nitrogen compensation
Assignee: Atlantic Richfield Co
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Filing: 1984-04-12
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Granted: 1985-07-23
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Expires: 2004-04-12
Abstract
Abstract A PIN amorphous silicon solar cell including a nitrogen compensated intrinsic inter-layer adjacent to the P type layer forming the light receiving face of the cell.
Inventors
- 👤 Boon Wong
- 👤 Don L. Morel
- 👤 Victor L. Grosvenor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:34
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
102 words
A solar cell comprising: a transparent front face electrode, a first layer of hydrogenated amorphous silicon contacting said front electrode, said first layer doped with an impurity of P conductivity type, a second layer of hydrogenated amorphous silicon of essentially intrinsic conductivity, said second layer doped with nitrogen in a concentration of from two atomic percent to five atomic percent; a third layer of essentially intrinsic hydrogenated amorphous silicon contacting said second layer; a fourth layer of hydrogenated amorphous silicon contacting said third layer, said fourth layer doped with an impurity of N conductivity type; and means for contacting said fourth layer.
Claim 2
Dependent Claim
102 words
A solar cell comprising: a transparent front face electrode, a first layer of hydrogenated amorphous silicon contacting said front electrode, said first layer doped with an impurity of P conductivity type, a second layer of hydrogenated amorphous silicon of essentially intrinsic conductivity, said second layer doped with nitrogen in a concentration of from two atomic percent to five atomic percent; a third layer of essentially intrinsic hydrogenated amorphous silicon contacting said second layer; a fourth layer of hydrogenated amorphous silicon contacting said third layer, said fourth layer doped with an impurity of N conductivity type; and means for contacting said fourth layer.
Claim 3
Dependent Claim
19 words
A solar cell according to claim 1 wherein said second silicon layer is from 20 to 1000 angstroms thick.
Claim 4
Dependent Claim
19 words
A solar cell according to claim 2 wherein said third silicon layer is from 4000 to 7000 angstroms thick.
Claim 5
Dependent Claim
17 words
A solar cell according to claim 1 wherein said second silicon layer is about 50 angstroms thick.
Claim 6
Dependent Claim
19 words
A solar cell according to claim 4 wherein said third silicon layer is from 4000 to 7000 angstroms thick.
Claim 7
Dependent Claim
34 words
A solar cell according to claim 1 wherein said fourth silicon layer is alloyed with nitrogen in a silicon to nitrogen atomic ratio of from about 3 to 1 to about 11 to 2.
Claim 8
Dependent Claim
72 words
In a solar cell having P, I, and N layers of hydrogenated amorphous silicon with said P layer forming a light receiving face of said cell, the improvement comprising: a fourth layer of hydrogenated amorphous silicon of essentially intrinsic conductivity, doped with nitrogen in a concentration of from two atomic percent to five atomic percent positioned between said I layer and the P layer forming the light receiving face of said cell.
Claim 9
Dependent Claim
72 words
In a solar cell having P, I, and N layers of hydrogenated amorphous silicon with said P layer forming a light receiving face of said cell, the improvement comprising: a fourth layer of hydrogenated amorphous silicon of essentially intrinsic conductivity, doped with nitrogen in a concentration of from two atomic percent to five atomic percent positioned between said I layer and the P layer forming the light receiving face of said cell.
Claim 10
Dependent Claim
19 words
The improved solar cell of claim 7 wherein said fourth silicon layer is from 20 to 1000 angstroms thick.
Claim 11
Dependent Claim
18 words
The improved solar cell of claim 8 wherein said I layer is from 4000 to 7000 angstroms thick.
Claim 12
Dependent Claim
17 words
The improved solar cell of claim 7 wherein said fourth silicon layer is about 50 angstroms thick.
Claim 13
Dependent Claim
18 words
The improved solar cell of claim 10 wherein said I layer is from 4000 to 7000 angstroms thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |