← Back to Patent Explorer
US4530825A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for the production of silicon nitride

Assignee: Kemanord AB
•
Filing: 1984-04-12
•
Granted: 1985-07-23
•
Expires: 2004-04-12
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A process for the production of silicon nitride by reaction of silicon dioxide, carbon and nitrogen at temperatures above about 1300° C. whereby a partial pressure of nitrogen above 1 bar is maintained during the reaction.

Inventors

  • 👤 Thomas Johansson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 02:48
CPC Classifications
C; C01; C01B; C01B21/00; C01B21/06; C01B21/068; C01B21/0685

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 49 words
A process for the production of silicon nitride by reaction of silicon dioxide, carbon and nitrogen under heat supply in an endothermic process at temperatures in the raw material mixture above 1300 degrees centigrade, comprising the steps of maintaining a nitrogen partial pressure above 5 bars during the reaction.
Claim 2
Dependent Claim 49 words
A process for the production of silicon nitride by reaction of silicon dioxide, carbon and nitrogen under heat supply in an endothermic process at temperatures in the raw material mixture above 1300 degrees centigrade, comprising the steps of maintaining a nitrogen partial pressure above 5 bars during the reaction.
Claim 3
Dependent Claim 57 words
A process according to claim 1 wherein in a first step a part of the silicon dioxide is reacted to carbide with carbon in a mole ratio of 3 moles for each mole of reacted silicon dioxide and in a second step the nitrogen gas is supplied to nitridate the formed carbide and the remaining silicon dioxide.
Claim 4
Dependent Claim 16 words
A process according to claim 1, characterized in that the pressure is kept above 20 bars.
Claim 5
Dependent Claim 21 words
A process according to claim 1, characterized in that the temperature is kept below the fusion temperature for the silicon dioxide.
Claim 6
Dependent Claim 30 words
A process according to claim 4, characterized in that the temperature is kept below the threshold temperature for conversion of silicon nitride to silicon carbide at the pressure in question.
Claim 7
Dependent Claim 24 words
A process according to claim 5 wherein the temperature is above 90% of the threshold temperature, in degrees centigrades, at the selected nitrogen pressure.
Claim 8
Dependent Claim 26 words
A process according to claim 1, characterized in that the mole ratio of silicon dioxide to carbon in the reactor is kept between 1.9:1 to 10:1.
Claim 9
Dependent Claim 18 words
A process according to claim 7, characterized in that the mole ratio is kept between 1.95:1 to 2.2:1.
Claim 10
Dependent Claim 54 words
A process according to claim 1, characterized in that the reaction atmosphere, containing carbon monoxide, is mixed with air in such an amount and under such conditions that the carbon monoxide is oxidized into carbon dioxide, that the carbon dioxide is removed and that the remaining gas is used for further silicon nitride manufacture.
Claim 11
Dependent Claim 43 words
A process for the production of silicon nitride comprising reacting a mixture consisting of silicon dioxide and carbon at temperatures above 1407 degrees C. with nitrogen at a partial pressure above atmospheric pressure to yield a solid product consisting essentially of silicon nitride.
Claim 12
Dependent Claim 43 words
A process for the production of silicon nitride comprising reacting a mixture consisting of silicon dioxide and carbon at temperatures above 1407 degrees C. with nitrogen at a partial pressure above atmospheric pressure to yield a solid product consisting essentially of silicon nitride.
Claim 13
Dependent Claim 28 words
A process according to claim 10 wherein the temperature is kept below the threshold temperature for conversion of silicon nitride to silicon carbide at the pressure in question.

References Cited (Backward Citations)

US1054901A Cited
US3855395A Cited
US4117095A Cited
EP0079678A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-22 1989-01-21 1989-07-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-22 1993-01-21 1993-07-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-22 1997-01-21 1997-07-23 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag