US4530734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low energy ion etching
Assignee: Individual
•
Filing: 1983-01-17
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Granted: 1985-07-23
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Expires: 2003-01-17
Abstract
Abstract A substrate is irradiated in a pattern with a neutron beam at energy levels well below those which produce either atomic reactions or physical disruption of the substrate structure. When etched with a suitable etchant, the irradiated portions are preferentially etched to produce a pattern corresponding to the irradiated pattern. In one embodiment of the invention, aluminosilicate crystals are irradiated with neutrons and are etched with hydrofluoric acid to produce the etched structure.
Inventors
- 👤 Walter F. Klima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:58
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; C04B41/5353; H; H10; H10P; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S148/00; Y10S148/165
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
80 words
A method for producing an etched pattern comprising: selecting a substrate which is made preferentially etchable by an etchant after irradiation by a neutron flux; irradiating said substrate with a neutron flux in said pattern; controlling said neutron flux to a value below that at which either substantial atomic reaction or physical damage is produced; and etching said substrate in said etchant having a concentration and a temperature and for a time effective to etch said pattern in said substrate.
Claim 2
Independent Claim
80 words
A method for producing an etched pattern comprising: selecting a substrate which is made preferentially etchable by an etchant after irradiation by a neutron flux; irradiating said substrate with a neutron flux in said pattern; controlling said neutron flux to a value below that at which either substantial atomic reaction or physical damage is produced; and etching said substrate in said etchant having a concentration and a temperature and for a time effective to etch said pattern in said substrate.
Claim 3
Dependent Claim
36 words
A method according to claim 1, wherein the step of selecting a substrate includes selecting a synthetic mica having from about 10 to about 65 percent aluminum and from about 20 to about 80 percent silicon.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the step of selecting a substrate includes selecting a muscovite substrate having a formula KH 2 Al 2 (SiO 4 ).
Claim 5
Dependent Claim
44 words
A method according to claim 1, wherein the step of irradiating said substrate with a neutron flux in said pattern includes moving said substrate to present portions of a surface thereof to said neutron flux whereby said pattern is traced out on said surface.
Claim 6
Dependent Claim
17 words
A method according to claim 1, wherein the step of etching includes etching with a hydrofluoric acid.
Claim 7
Independent Claim
93 words
A method for producing an etched pattern comprising: producing a substantially monochromatic neutron beam; irradiating a surface of a substrate consisting of one of muscovite or synthetic mica with said neutron beam; moving one of said substrate and said neutron beam during the step of irradiating whereby said pattern is traced out on said surface; controlling a flux of said neutron beam to a value below that which causes substantial atomic reaction or physical damage to said substrate; and etching said substrate with hydrofluoric acid whereby said pattern is etched into said surface.
Claim 8
Independent Claim
93 words
A method for producing an etched pattern comprising: producing a substantially monochromatic neutron beam; irradiating a surface of a substrate consisting of one of muscovite or synthetic mica with said neutron beam; moving one of said substrate and said neutron beam during the step of irradiating whereby said pattern is traced out on said surface; controlling a flux of said neutron beam to a value below that which causes substantial atomic reaction or physical damage to said substrate; and etching said substrate with hydrofluoric acid whereby said pattern is etched into said surface.
References Cited (Backward Citations)
US3303085A
Cited
US3612871A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |