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US4530064A Expired / Lapsed US ⏱️ 0.0 years remaining

Exposure method utilizing an energy beam

Assignee: Toshiba Corp
•
Filing: 1982-08-24
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Granted: 1985-07-16
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Expires: 2002-08-24
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Abstract

Abstract According to the present invention, a simplified process is provided for drawing a picture pattern and an alignment pattern on a substrate at a scaling factor α by utilizing an energy beam exposure device. According to the invention, a scale conversion of 1/α is first applied to the alignment mark patterns. The parameters of the exposure device such as beam diameter, beam scanning interval, beam scanning deflection amplitude, frequency division factor, and displacement velocity are altered in accordance with the desired scaling factor α. The chip pattern data and the altered alignment mark data are then utilized together for drawing the pattern of the substrate without need for re-adjustment during the drawing process.

Inventors

  • 👤 Tadahiro Takigawa
  • 👤 Yasunobu Kawauchi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 20:12
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/302; H01J37/3023; H01J37/3026; H10; H10P; H10P95/00

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 96 words
A method for controlling the drawing of a scaled pattern on a substrate from original pattern data comprising picture data and alignment data in accordance with drawing operation parameters of an energy beam exposure device at a desired scaling factor α, comprising the steps of: altering the scale of the alignment data by a factor of 1 α to produce scaled alignment data; altering the drawing operation parameters by the factor α to produce scaled drawing operation parameters; and drawing said picture data and said scaled alignment data in accordance with said scaled drawing operation parameters.
Claim 2
Independent Claim 96 words
A method for controlling the drawing of a scaled pattern on a substrate from original pattern data comprising picture data and alignment data in accordance with drawing operation parameters of an energy beam exposure device at a desired scaling factor α, comprising the steps of: altering the scale of the alignment data by a factor of 1 α to produce scaled alignment data; altering the drawing operation parameters by the factor α to produce scaled drawing operation parameters; and drawing said picture data and said scaled alignment data in accordance with said scaled drawing operation parameters.
Claim 3
Dependent Claim 19 words
The method according to claim 1, wherein said original pattern data is provided by a computer aided design system.
Claim 4
Dependent Claim 37 words
The method according to claim 1, wherein said original pattern data is expressed in one data format and is then converted to another data format which is more suitable for operation of the energy beam exposure device.
Claim 5
Dependent Claim 40 words
The method of claim 3, wherein said one data format is PG data format whereby a rectangle is used as the unit figure and said other data format is EB format whereby a trapezoid is used as the unit figure.
Claim 6
Dependent Claim 24 words
The method according to claim 4, wherein the step of altering the alignment data involves altering alignment data expressed in said PG data format.
Claim 7
Dependent Claim 13 words
The method according to claim 1, wherein said substrate is a mask substrate.
Claim 8
Dependent Claim 14 words
The exposure method according to claim 1, wherein said substrate is a semiconductor wafer.
Claim 9
Dependent Claim 36 words
The method according to claim 1, wherein the substrate is placed on a moving table and the energy beam is scanned along the surface of said substrate for drawing the picture data and scaled alignment data.
Claim 10
Dependent Claim 25 words
The method according to claim 8, wherein said table moves continuously in one direction and said energy beam is scanned in a raster scan manner.
Claim 11
Dependent Claim 16 words
The method according to claim 1, wherein the picture data is an integrated circuit pattern data.

References Cited (Backward Citations)

US4145615A Cited
US4199689A Cited
US4280186A Cited
JPS56135929A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-07-15 1989-01-14 1989-07-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-07-15 1993-01-14 1993-07-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-07-15 1997-01-14 1997-07-16 $7700.00 Window Closed / Lapsed

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