Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
177 words
A method for determining the phase of a deposited material having a property of absorbing light to a given penetration depth, said material being capable of being deposited in either of two predetermined phases, comprising the steps of: (a) depositing one of said two phases of said material on a surface; (b) exposing one or more regions of said material to a beam of light of a selected wavelength; (c) detecting light having an intensity greater than a threshold intensity scattered from the exposed material to provide an electrical signal proportional to the intensity of scattered light detected above said threshold intensity; (d) applying the electrical signal to a visual display device to control the intensity of the display beam of the device; and (e) varying said threshold intensity to thereby vary the intensity of the display beam so as to provide the minimum intensity of display beam which yields a full display of the exposed material, wherein the value of the threshold intensity is a direct measure of the phase in which said material was deposited.
Claim 2
Independent Claim
177 words
A method for determining the phase of a deposited material having a property of absorbing light to a given penetration depth, said material being capable of being deposited in either of two predetermined phases, comprising the steps of: (a) depositing one of said two phases of said material on a surface; (b) exposing one or more regions of said material to a beam of light of a selected wavelength; (c) detecting light having an intensity greater than a threshold intensity scattered from the exposed material to provide an electrical signal proportional to the intensity of scattered light detected above said threshold intensity; (d) applying the electrical signal to a visual display device to control the intensity of the display beam of the device; and (e) varying said threshold intensity to thereby vary the intensity of the display beam so as to provide the minimum intensity of display beam which yields a full display of the exposed material, wherein the value of the threshold intensity is a direct measure of the phase in which said material was deposited.
Claim 3
Dependent Claim
45 words
The method of claim 1 comprising depositing said material at a first relatively low temperature, and, following said depositing step, annealing said material at a relatively high temperature, whereby the phase of said material as-deposited prior to annealing is determined by said value of intensity.
Claim 4
Dependent Claim
36 words
The method of claim 1 comprising depositing said material by low pressure chemical vapor deposition (LPCVD) of silicon in either an amorphous phase at 560° to 580° C. or crystalline phase at 600° to 620° C.
Claim 5
Dependent Claim
22 words
The method of claim 1 comprising depositing said material selected from the group consisting of chalcogenides and alloys of tellurium and selenium.
Claim 6
Dependent Claim
25 words
The method of claim 1 comprising depositing said material from the chalcogenides group consisting essentially of tellurium and selenium and binary or ternary alloys thereof.
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein the light exposing step comprises scanning the light beam of a selected surface portion of the material.
Claim 8
Dependent Claim
29 words
The method of claim 1, wherein the light exposing step comprises exposing the material to a plurality of selected spatially separated beams incident on the surface of the material.
Claim 9
Dependent Claim
22 words
The method of claim 1, wherein the wavelength of said light is selected from a wavelength within the range of 2,600-5,200 angstroms.
Claim 10
Dependent Claim
22 words
The method of claim 1 comprising depositing said material as a layer of amorphous silicon on a layer of single crystal silicon.
Claim 11
Dependent Claim
33 words
The method of claim 1 comprising depositing said material as a layer of polycrystalline silicon on a layer of single crystal silicon and annealing said polycrystalline layer prior to steps (b) to (e).