Semiconductor imaging device using charge-coupling device

Claim 2

A two-dimensional, imaging device comprising a semiconductor substrate of one conductivity type, an orthogonal array of photosensitive regions of an opposite conductivity type formed on said semiconductor substrate, charge transfer channels separating columns of said orthogonal array, gate means also separating columns of said photosensitive regions for enabling a transfer of light-caused charges from said photosensitive region to said charge transfer channels, each of said charge transfer channels including electrodes for charge storage regions and electrodes for potential barrier regions, these two type of electrodes being disposed on but electrically isolated from the semiconductor substrate of said one conductivity type to form buried channel charge coupled devices, one pair of said two types of electrodes being disposed beside one photosensitive region and electrically isolated from each other, another pair of said two types of electrodes adjacent said one pair of two type electrodes being disposed beside another photosensitive region adjacent to said one photosensitive region in the same column of said orthogonal array and electrically isolated from each other, said electrode for the charge storage region of said one pair and said electrode for a potential barrier region of said other pair being electrically connected with each other, means for applying a combination of gate pulses to said gate electrodes and two phases of clock pulses to said charge shift electrodes for transferring charges from said photosensitive areas to said charge transfer channels, and means for alternately applying the two phases of the clock pulses to said charge shift electrodes for shifting the transferred charges along said columns.

Claim 3

The device of claim 1 further comprising charge to signal conversion means disposed at an end of said columns for converting light-induced charges originating in said photosensitive regions and transferred though said charge transfer channels into electrical signals.

Claim 4

The device of claim 1 further comprises means for applying one of said phases of clock pulses to every other pair of said two type of electrodes while the other phase of said clock pulses is being applied to the other pairs of said two type of electrodes.

Claim 5

The device of claim 1 further comprising isolation regions formed in said substrate to stop electrical interchange between adjacent photosensitive regions.

Claim 6

A two-dimensional image device comprising a plurality of, mutually isolated, photosensitive regions formed on a semiconductor substrate of one conductivity type, said photosensitive regions accumulating charges in response to irradiated light and being two-dimensionally arranged in rows and columns; transfer gate electrodes formed adjacent to and in parallel with said columns of said photosensitive regions; and charge shift channels adjacent to and in parallel with said transfer gate electrodes, said charge shift channels having a number of charge shift electrodes corresponding to the number of photosensitive regions; said image device being characterized in that: a. each of said charge shift electrodes includes a charge storage part and a potential barrier part; (b) said transfer gate electrodes being disposed on but electrically isolated from a semiconductor region of said one conductivity type to form surface channel charge coupled devices to enable a transfer of accumulated charges from said photosensitive regions to said charge shift channels, and said charge storage parts and said potential barrier parts of said charge shift electrodes being disposed on but isolated from a semiconductor region of the other conductivity type to form a buried channel charge coupled device to enable a shift of the transfer charges along said charge shift channels; c. one pair of said charge storage part and said potential barrier part of said charge shift electrode facing one of said photosensitive regions and being isolated from each other, and an adjacent pair formed by said charge storage part and said potential barrier part facing an adjacent one of the photosensitive regions in each column and being isolated from each other; d. said charge storage part belonging to said one pair of said charge shift electrodes being electrically connected with said potential barrier part belonging to said adjacent pair of said charge shift electrodes; e. said one photosensitive region being electrically isolated from said adjacent photosensitive region; and f. accumulated charges being transferred from said one photosensitive region to the charge storage part of said one pair facing said one photosensitive region, and from said adjacent photosensitive region to the charge storage part of said adjacent pair facing said adjacent photosensitive region.

Claim 7

A two-dimensional image device comprising a plurality of, mutually isolated, photosensitive regions formed on a semiconductor substrate of one conductivity type, said photosensitive regions accumulating charges in response to irradiated light and being two-dimensionally arranged in rows and columns; transfer gate electrodes formed adjacent to and in parallel with said columns of said photosensitive regions; and charge shift channels adjacent to and in parallel with said transfer gate electrodes, said charge shift channels having a number of charge shift electrodes corresponding to the number of photosensitive regions; said image device being characterized in that: a. each of said charge shift electrodes includes a charge storage part and a potential barrier part; (b) said transfer gate electrodes being disposed on but electrically isolated from a semiconductor region of said one conductivity type to form surface channel charge coupled devices to enable a transfer of accumulated charges from said photosensitive regions to said charge shift channels, and said charge storage parts and said potential barrier parts of said charge shift electrodes being disposed on but isolated from a semiconductor region of the other conductivity type to form a buried channel charge coupled device to enable a shift of the transfer charges along said charge shift channels; c. one pair of said charge storage part and said potential barrier part of said charge shift electrode facing one of said photosensitive regions and being isolated from each other, and an adjacent pair formed by said charge storage part and said potential barrier part facing an adjacent one of the photosensitive regions in each column and being isolated from each other; d. said charge storage part belonging to said one pair of said charge shift electrodes being electrically connected with said potential barrier part belonging to said adjacent pair of said charge shift electrodes; e. said one photosensitive region being electrically isolated from said adjacent photosensitive region; and f. accumulated charges being transferred from said one photosensitive region to the charge storage part of said one pair facing said one photosensitive region, and from said adjacent photosensitive region to the charge storage part of said adjacent pair facing said adjacent photosensitive region.

Claim 8

The two-dimensional image device as defined in claim 5, wherein the potential barrier part of said one pair and the charge storage part of said adjacent pair is connected to receive first clock pulses, and the potential barrier part of said adjacent pair and the charge storage part of said one pair is connected to receive second clock pulses, the phases of said first and second clock pulses being different from each other.

Claim 9

The device of claim 5 wherein said conversion means includes a shift register for transferring the charges transferred from said charge transfer channel, and a charge detector positioning at an end of said shift register.