US4521499A
Expired / Lapsed
US
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Highly conductive photoelectrochemical electrodes and uses thereof
Assignee: Union Oil Company of California
•
Filing: 1983-05-19
•
Granted: 1985-06-04
•
Expires: 2003-05-19
Abstract
Abstract A photoelectrode, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in photovoltaic cells, photoelectrosynthesis and photoelectrocatalysis.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:20
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; C25B11/00; C25B11/04; C25B11/051; C25B11/073; C25B11/075; C25B11/077; C25B11/091; H01M; H01M14/00; H01M14/005; H01M4/00; Y; Y02; Y02P; Y02P20/00; Y02P20/10; Y02P20/133; Y10; Y10S; Y10S204/00; Y10S204/03
Claims Analysis
Total Claims: 71
Claim 1
Independent Claim
65 words
A photoelectrode comprising a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 2
Dependent Claim
65 words
A photoelectrode comprising a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 3
Dependent Claim
17 words
The photoelectrode defined in claim 1 wherein said coating material has a resistivity less than said substrate.
Claim 4
Dependent Claim
20 words
The photoelectrode defined in claim 1 wherein said semiconductor has a band gap from about 0.5 to about 4.0 e.V.
Claim 5
Dependent Claim
23 words
The photoelectrode defined in claim 1 wherein said coating material has a resistivity less than about 10 -2 ohm-cm, measured at room temperature.
Claim 6
Dependent Claim
26 words
The photoelectrode defined in claim 1 wherein said coating material has a band gap greater than the band gap of said semiconductor material in said substrate.
Claim 7
Dependent Claim
17 words
The photoelectrode defined in claim 1 wherein said semiconductor in said substrate comprises n-type or p-type material.
Claim 8
Dependent Claim
14 words
The photoelectrode defined in claim 1 wherein said coating material is doped to degeneracy.
Claim 9
Dependent Claim
20 words
The photoelectrode defined in claim 1 wherein said layer has an average thickness from about 1 to about 20 angstroms.
Claim 10
Dependent Claim
13 words
The photoelectrode defined in claim 1 wherein said coating material is naturally degenerate.
Claim 11
Dependent Claim
24 words
The photoelectrode defined in claim 1 wherein said coating material comprises a combination of components selected from the group consisting of elements and compounds.
Claim 12
Dependent Claim
23 words
The photoelectrode defined in claim 1 wherein said coating material has a resistivity less than about 10 -3 ohm-cm, measured at room temperature.
Claim 13
Dependent Claim
49 words
The photoelectrode defined in claim 1 wherein said coating material is selected from the group consisting of Tl 2 O 3 , CdO, PbO 2 , Cr 2 O 3 , RuS 2 , Cu 2 S, PtCoO 2 , PdCoO 2 , PdRhO 2 and PdCrO 2 .
Claim 14
Dependent Claim
18 words
The photoelectrode defined in claim 1 wherein said layer has a band gap greater than about 4.0 e.V.
Claim 15
Dependent Claim
31 words
The photoelectrode defined in claim 1 wherein said coating material is selected from the group consisting of thallium (III) oxide (Tl 2 O 3 ) and lead dioxide (PbO 2 ).
Claim 16
Dependent Claim
29 words
The photoelectrode defined in claim 1 wherein said substrate comprises n-type silicon and said layer comprises an oxide of silicon having an average thickness less than about 50 angstroms.
Claim 17
Dependent Claim
12 words
The photoelectrode defined in claim 1 wherein said coating material is catalytic.
Claim 18
Dependent Claim
48 words
A photoelectrode comprising a coating material selected from the group consisting of Tl 2 O 3 , CdO, PbO 2 , Cr 2 O 3 , RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 , on a substrate containing a semiconductor.
Claim 19
Dependent Claim
48 words
A photoelectrode comprising a coating material selected from the group consisting of Tl 2 O 3 , CdO, PbO 2 , Cr 2 O 3 , RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 , on a substrate containing a semiconductor.
Claim 20
Dependent Claim
21 words
The photoelectrode defined in claim 17 wherein said coating material has a band gap from about 0.5 to about 2.35 e.V.
Claim 21
Dependent Claim
34 words
The photoelectrode defined in claim 18 wherein said semiconductor has a band gap from about 0.5 to about 4.0 e.V. and is selected from the group consisting of n-type, intrinsic or p-type semiconductor material.
Claim 22
Dependent Claim
23 words
The photoelectrode defined in claim 17 wherein said coating material has a resistivity less than about 10 -4 ohm-cm, measured at room temperature.
Claim 23
Dependent Claim
31 words
The photoelectrode defined in claim 17 wherein said coating material is selected from the group consisting of thallium (III) oxide (Tl 2 O 3 ) and lead dioxide (PbO 2 ).
Claim 24
Dependent Claim
12 words
The photoelectrode defined in claim 17 wherein said substrate comprises n-type silicon.
Claim 25
Dependent Claim
12 words
The photoelectrode defined in claim 17 wherein said coating material is catalytic.
Claim 26
Dependent Claim
16 words
A photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 27
Dependent Claim
16 words
A photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 28
Dependent Claim
12 words
The photoelectrode defined in claim 24 wherein said coating material is catalytic.
Claim 29
Dependent Claim
22 words
The photoelectrode defined in claim 24 wherein said substrate is selected from the group consisting of GaAs, InP, CdSe, GaP, and Si.
Claim 30
Dependent Claim
25 words
The photoelectrode defined in claim 24 wherein said substrate comprises a material having a band gap greater than 0 and less than about 4.0 e.V.
Claim 31
Dependent Claim
20 words
The photoelectrode defined in claim 24 wherein said semiconductor has a band gap from about 0.7 to about 2.5 e.V.
Claim 32
Dependent Claim
12 words
The photoelectrode defined in claim 24 wherein said semiconductor comprises n-type silicon.
Claim 33
Dependent Claim
34 words
The photoelectrode defined in claim 29 further comprising a layer comprising silicon dioxide having an average thickness of less than about 50 angstroms and located between said n-type silicon and said thallium (III) oxide.
Claim 34
Dependent Claim
26 words
The photoelectrode defined in claim 24 wherein said thallium (III) oxide is dispersed on said substrate to an average thickness of less than 10 5 angstroms.
Claim 35
Dependent Claim
23 words
The photoelectrode defined in claim 24 wherein said substrate has a band gap less than the band gap of said thallium (III) oxide.
Claim 36
Dependent Claim
73 words
A photoelectrode prepared by the method comprising the step of electrochemical deposition of a conductive coating material having a band gap in the range from greater than 0.5 to about 2.35 e.V. on a substrate containing semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 37
Dependent Claim
73 words
A photoelectrode prepared by the method comprising the step of electrochemical deposition of a conductive coating material having a band gap in the range from greater than 0.5 to about 2.35 e.V. on a substrate containing semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 38
Dependent Claim
16 words
The photoelectrode prepared by the method of claim 33 wherein said electrochemical deposition comprises photoelectrochemical deposition.
Claim 39
Dependent Claim
17 words
The photoelectrode prepared by the method of claim 33 wherein said electrochemical deposition comprises potentiostatic electrochemical deposition.
Claim 40
Dependent Claim
16 words
The photoelectrode prepared by the method of claim 33 wherein said electrochemical deposition comprises electroless deposition.
Claim 41
Dependent Claim
68 words
A photoelectrochemical process employing a photoelectrode comprising a conductive coating material having a band gap in the range from greater than 0.5 to about 2.5 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 42
Dependent Claim
68 words
A photoelectrochemical process employing a photoelectrode comprising a conductive coating material having a band gap in the range from greater than 0.5 to about 2.5 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
Claim 43
Dependent Claim
20 words
The process defined in claim 37 further comprising a photoelectrochemical cell having a series resistance less than about 1000 ohms.
Claim 44
Dependent Claim
12 words
The process defined in claim 37 producing electricity in a photovoltaic cell.
Claim 45
Dependent Claim
17 words
The process defined in claim 37 producing chemical products from an endoergic reaction in a photoelectrosynthetic cell.
Claim 46
Dependent Claim
13 words
The process defined in claim 40 wherein said chemical products comprise hydrogen gas.
Claim 47
Dependent Claim
17 words
The process defined in claim 40 producing chemical products from an exoergic reaction in a photoelectrocatalytic cell.
Claim 48
Dependent Claim
20 words
The process defined in claim 42 wherein said chemical products comprise at least one organic material oxidized in said process.
Claim 49
Dependent Claim
20 words
A photoelectrochemical process employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 50
Dependent Claim
20 words
A photoelectrochemical process employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 51
Dependent Claim
20 words
The process defined in claim 44 further comprising a photoelectrochemical cell having a series resistance less than about 100 ohms.
Claim 52
Dependent Claim
15 words
The process defined in claim 44 wherein said photoelectrode further comprises an n-type silicon substrate.
Claim 53
Dependent Claim
12 words
The process defined in claim 44 producing electricity in a photovoltaic cell.
Claim 54
Dependent Claim
22 words
The process defined in claim 47 wherein said photovoltaic cell comprises a redox-couple containing ions of ferrocyanate and ferricyanate in aqueous solution.
Claim 55
Dependent Claim
16 words
The process defined in claim 44 producing hydrogen gas and oxygen gas in a photoelectrosynthetic cell.
Claim 56
Dependent Claim
13 words
The process defined in claim 44 producing propylene oxide in a photoelectrocatalytic cell.
Claim 57
Dependent Claim
54 words
A photoelectrochemical cell employing a photoelectrode comprising a conductive coating material selected from the group consisting of Tl 2 O 3 , CdO, PbO 2 , Cr 2 O 3 , RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 , on a substrate containing a semiconductor material.
Claim 58
Dependent Claim
54 words
A photoelectrochemical cell employing a photoelectrode comprising a conductive coating material selected from the group consisting of Tl 2 O 3 , CdO, PbO 2 , Cr 2 O 3 , RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 , on a substrate containing a semiconductor material.
Claim 59
Dependent Claim
10 words
The cell defined in claim 51 comprising a photovoltaic cell.
Claim 60
Dependent Claim
10 words
The cell defined in claim 51 comprising a photoelectrosynthetic cell.
Claim 61
Dependent Claim
10 words
The cell defined in claim 51 comprising a photoelectrocatalytic cell.
Claim 62
Dependent Claim
15 words
The cell defined in claim 51 having a series resistance less than about 100 ohms.
Claim 63
Dependent Claim
23 words
The cell defined in claim 51 producing chemical products selected from the group consisting of hydrogen, oxygen, chlorine, bromine, iodine and propylene oxide.
Claim 64
Dependent Claim
20 words
A photoelectrochemical cell employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 65
Dependent Claim
20 words
A photoelectrochemical cell employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
Claim 66
Dependent Claim
10 words
The cell defined in claim 57 comprising a photovoltaic cell.
Claim 67
Dependent Claim
10 words
The cell defined in claim 57 comprising a photoelectrosynthetic cell.
Claim 68
Dependent Claim
10 words
The cell defined in claim 57 comprising a photoelectrocatalytic cell.
Claim 69
Dependent Claim
15 words
The cell defined in claim 57 having a series resistance less than about 100 ohms.
Claim 70
Dependent Claim
23 words
The cell defined in claim 57 producing chemical products selected from the group consisting of hydrogen, oxygen, chlorine, bromine, iodine and propylene oxide.
Claim 71
Dependent Claim
19 words
The cell defined in claim 57 further comprising a redox-couple containing ions of ferrocyanide and ferricyanide in a liquid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-03 | 1988-12-03 | 1989-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-03 | 1992-12-03 | 1993-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-03 | 1996-12-03 | 1997-06-04 | $7700.00 | Window Closed / Lapsed |