Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
298 words
A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semicondutor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electroes E j and E j+1 are separated by a first groove G j ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrodes F j and F j+1 are separated by an isolating portion H j in the non-single-crystal semiconductor laminate member Q i ; wherein a second groove O j is cut in the non-single-crystal semiconductor laminate member Q i between the second electrode F j+1 and the first electrode E j to extend into the latter; and wherein the coupling portion K j extends into the second groove O j to be coupled with the side of the first electrode E j exposed to the second groove O j .
Claim 2
Dependent Claim
298 words
A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semicondutor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the first electroes E j and E j+1 are separated by a first groove G j ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrodes F j and F j+1 are separated by an isolating portion H j in the non-single-crystal semiconductor laminate member Q i ; wherein a second groove O j is cut in the non-single-crystal semiconductor laminate member Q i between the second electrode F j+1 and the first electrode E j to extend into the latter; and wherein the coupling portion K j extends into the second groove O j to be coupled with the side of the first electrode E j exposed to the second groove O j .
Claim 3
Dependent Claim
89 words
A photoelectric conversion device according to claim 1, wherein the non-single-crystal semiconductor laminate member Q j+1 extends into the first groove G j , and wherein the width of the first groove G j is selected so that the resistance of the non-single-crystal semiconductor laminate member Q j+1 between the first electrodes E j and E j+1 in the first groove G 1 is higher than the resistance of the non-single-crystal semiconductor laminate member Q j+1 between the first electrode E j+1 and the second electrode F j+1 .
Claim 4
Dependent Claim
20 words
A photoelectric conversion device according to claim 2, wherein the first groove G j is 10 to 200 μm wide.
Claim 5
Dependent Claim
41 words
A photoelectric conversion device according to claim 1, wherein the distance between the inner side of the first groove G j and the inner side of the second groove O j is selected in the range of 10 to 150 μm.
Claim 6
Dependent Claim
61 words
A photoelectric conversion device according to claim 1, wherein the second groove O j extends into the first electrode E j with a width smaller than in the non-single-crystal semiconductor laminate member Q j , and wherein the coupling portion K j is coupled with the top of the first electrode E j exposed by the second groove O j .
Claim 7
Dependent Claim
63 words
A photoelectric conversion device according to claim 1, wherein the second groove O j extends through the first electrode E j and into the substrate with a width greater than in the first electrode E j , and wherein the coupling portion K j is coupled with the bottom of the first electrode E j exposed by the second groove O j .
Claim 8
Dependent Claim
78 words
A photoelectric conversion device according to claim 1, wherein the second groove O j extends through the first electrode E j with a width smaller than in the non-single-crystal semiconductor laminate member Q j and into the substrate with a width greater than in the first electrode E j , and wherein the coupling portion K j is coupled with the top and bottom of the first electrode E j exposed by the second groove O j .
Claim 9
Dependent Claim
18 words
A photoelectric conversion device according to claim 1, wherein the isolating portion H j is a third groove.
Claim 10
Dependent Claim
26 words
A photoelectric conversion device according to claim 8, wherein the top of the non-single-crystal semiconductor laminate member Q j exposed by the third groove is insulated.
Claim 11
Dependent Claim
21 words
A photoelectric conversion device according to claim 8, wherein the third groove extends into the non-single-crystal semiconductor layer Q j .
Claim 12
Dependent Claim
27 words
A photoelectric conversion device according to claim 10, wherein the interior surface of the non-single-crystal semiconductor laminate member Q j exposed by the third groove is insulated.