US4516179A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetic transducer head utilizing magnetoresistance effect
Assignee: Sony Corp
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Filing: 1982-08-13
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Granted: 1985-05-07
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Expires: 2002-08-13
Abstract
Abstract A magnetic transducer head utilizing magnetoresistance effect is disclosed which includes a thin film magnetoresistance effect element held between, first and second substrates, at least one of the first and second substrates being formed of an electrically conductive material, and a biasing means for the magnetoresistance effect element to satisfy a potential relation V MR -V S ≦0.2 volt, wherein V MR is a potential of the magnetoresistance effect element, and V S is a potential of the conductive substrate.
Inventors
- 👤 Shigeyoshi Imakoshi
- 👤 Yutaka Soda
- 👤 Hiroyuki Uchida
- 👤 Junkichi Sugita
- 👤 Hiroshi Takino
- 👤 Tetsuo Sekiya
- 👤 Hideo Suyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:07
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/31; G11B5/3103; G11B5/3106; G11B5/40
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A magnetic transducer head utilizing magnetoresistance effect comprising: a thin film magnetoresistance effect element held between first and second substrates, at least one of said first and second substrates being formed of a electrically conductive material, and a biasing means for said magnetoresistance effect element to satisfy a potential relation V MR -V S ≦0.2 volt, wherein V MR is a potential of said magnetoresistance effect element, and V S is a potential of said conductive substrate.
Claim 2
Dependent Claim
77 words
A magnetic transducer head utilizing magnetoresistance effect comprising: a thin film magnetoresistance effect element held between first and second substrates, at least one of said first and second substrates being formed of a electrically conductive material, and a biasing means for said magnetoresistance effect element to satisfy a potential relation V MR -V S ≦0.2 volt, wherein V MR is a potential of said magnetoresistance effect element, and V S is a potential of said conductive substrate.
Claim 3
Dependent Claim
19 words
A magnetic transducer head utilizing magnetoresistance effect according to claim 1, wherein said first substrate is made of sapphire.
Claim 4
Dependent Claim
40 words
A magnetic transducer head utilizing magnetoresistance effect according to claim 1, wherein said second substrate is made of sintered complex of alumina and titanium carbide, and said magnetoresistance effect element and said second substrate is insulated by an insulating layer.
Claim 5
Dependent Claim
34 words
A magnetic transducer head utilizing magnetoresistance effect according to claim 1, wherein said first and second substrates are made of electrically conductive magnetic ferrite, and said magnetoresistance effect element is insulated by insulating layers.
Claim 6
Dependent Claim
36 words
A magnetic transducer head utilizing magnetoresistance effect according to claim 1, wherein said biasing means is a current source to provide a current flow along a direction to satisfy said relation through said magnetoresistance effect element.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-06 | 1988-11-05 | 1989-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-06 | 1992-11-05 | 1993-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-06 | 1996-11-05 | 1997-05-07 | $7700.00 | Window Closed / Lapsed |