Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
61 words
In a solar cell having an active semiconductor layer which has a minority carrier diffusion length, L m , which is less than the solar spectrum absorption thickness, t.sub.α : The improvement of limiting said active layer to a thickness of less than L m and greater than about 0.1 t.sub.α and providing said active layer with a back surface reflector.
Claim 2
Dependent Claim
61 words
In a solar cell having an active semiconductor layer which has a minority carrier diffusion length, L m , which is less than the solar spectrum absorption thickness, t.sub.α : The improvement of limiting said active layer to a thickness of less than L m and greater than about 0.1 t.sub.α and providing said active layer with a back surface reflector.
Claim 3
Dependent Claim
12 words
The improvement of claim 1 wherein said active semiconductor layer comprises silicon.
Claim 4
Dependent Claim
20 words
The improvement of claim 2 wherein said silicon semiconductor layer is produced by deposition from a glow discharge in silane.
Claim 5
Dependent Claim
18 words
The improvement of claims 1, 2 or 3 wherein said back surface reflector comprises a layer of silver.
Claim 6
Dependent Claim
87 words
A solar cell comprising: a. an active layer of a semiconductor having an inherent minority carrier diffusion length, L m , which is less than its solar spectrum absorption thickness t.sub.α, said semiconductor layer having a thickness of less than L m and greater than about 0.1 t.sub.α ; b. a junction for maintaining separation of photogenerated charge carrier, c. a back surface reflector for said active semiconductor layer, said back surface reflector having a solar spectrum reflectivity of at least about 70%; and, d. a substrate.
Claim 7
Dependent Claim
87 words
A solar cell comprising: a. an active layer of a semiconductor having an inherent minority carrier diffusion length, L m , which is less than its solar spectrum absorption thickness t.sub.α, said semiconductor layer having a thickness of less than L m and greater than about 0.1 t.sub.α ; b. a junction for maintaining separation of photogenerated charge carrier, c. a back surface reflector for said active semiconductor layer, said back surface reflector having a solar spectrum reflectivity of at least about 70%; and, d. a substrate.
Claim 8
Dependent Claim
15 words
A solar cell of claim 5 wherein said semiconductor layer comprises a layer of silicon.
Claim 9
Dependent Claim
33 words
A solar cell of claim 6 wherein said junction comprises a Schottky barrier formed between said semiconductor layer and a metal having a thickness at which said metal is transparent to solar radiation.
Claim 10
Dependent Claim
15 words
A solar cell of claim 7 wherein said metal comprises silver, platinum, palladium or aluminum.
Claim 11
Dependent Claim
14 words
A solar cell of claim 8 additionally including an antireflection coating on said metal.
Claim 12
Dependent Claim
13 words
A solar cell of claim 6 wherein said junction comprises a p-n junction.
Claim 13
Dependent Claim
13 words
A solar cell of claim 6 wherein said junction comprises a p-i-n junction.
Claim 14
Dependent Claim
11 words
A solar cell of claim 6 wherein said substrate comprises glass.
Claim 15
Dependent Claim
13 words
A solar cell of claim 6 wherein said substrate comprises a polymeric film.
Claim 16
Dependent Claim
19 words
A solar cell of claim 4, 6, 7, 9 or 13 wherein said solar cell has a light-trapping structure.
Claim 17
Dependent Claim
13 words
A solar cell of claim 14 wherein said back surface reflector comprises silver.