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US4514581A Expired / Lapsed US ⏱️ 0.0 years remaining

Solar cells having ultrathin active layers

Assignee: Massachusetts Institute of Technology
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Filing: 1982-11-08
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Granted: 1985-04-30
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Expires: 2002-11-08
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Abstract

Abstract Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub.α and L m wherein t.sub.α is the solar spectrum absorption length and L m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes mulitple passes through the thin semiconductor layers.

Inventors

  • 👤 John C. C. Fan
  • 👤 Carl O. Bozler

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 19:28
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10F77/40; H10F77/42; H10F77/48; H10F77/488; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/548

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 61 words
In a solar cell having an active semiconductor layer which has a minority carrier diffusion length, L m , which is less than the solar spectrum absorption thickness, t.sub.α : The improvement of limiting said active layer to a thickness of less than L m and greater than about 0.1 t.sub.α and providing said active layer with a back surface reflector.
Claim 2
Dependent Claim 61 words
In a solar cell having an active semiconductor layer which has a minority carrier diffusion length, L m , which is less than the solar spectrum absorption thickness, t.sub.α : The improvement of limiting said active layer to a thickness of less than L m and greater than about 0.1 t.sub.α and providing said active layer with a back surface reflector.
Claim 3
Dependent Claim 12 words
The improvement of claim 1 wherein said active semiconductor layer comprises silicon.
Claim 4
Dependent Claim 20 words
The improvement of claim 2 wherein said silicon semiconductor layer is produced by deposition from a glow discharge in silane.
Claim 5
Dependent Claim 18 words
The improvement of claims 1, 2 or 3 wherein said back surface reflector comprises a layer of silver.
Claim 6
Dependent Claim 87 words
A solar cell comprising: a. an active layer of a semiconductor having an inherent minority carrier diffusion length, L m , which is less than its solar spectrum absorption thickness t.sub.α, said semiconductor layer having a thickness of less than L m and greater than about 0.1 t.sub.α ; b. a junction for maintaining separation of photogenerated charge carrier, c. a back surface reflector for said active semiconductor layer, said back surface reflector having a solar spectrum reflectivity of at least about 70%; and, d. a substrate.
Claim 7
Dependent Claim 87 words
A solar cell comprising: a. an active layer of a semiconductor having an inherent minority carrier diffusion length, L m , which is less than its solar spectrum absorption thickness t.sub.α, said semiconductor layer having a thickness of less than L m and greater than about 0.1 t.sub.α ; b. a junction for maintaining separation of photogenerated charge carrier, c. a back surface reflector for said active semiconductor layer, said back surface reflector having a solar spectrum reflectivity of at least about 70%; and, d. a substrate.
Claim 8
Dependent Claim 15 words
A solar cell of claim 5 wherein said semiconductor layer comprises a layer of silicon.
Claim 9
Dependent Claim 33 words
A solar cell of claim 6 wherein said junction comprises a Schottky barrier formed between said semiconductor layer and a metal having a thickness at which said metal is transparent to solar radiation.
Claim 10
Dependent Claim 15 words
A solar cell of claim 7 wherein said metal comprises silver, platinum, palladium or aluminum.
Claim 11
Dependent Claim 14 words
A solar cell of claim 8 additionally including an antireflection coating on said metal.
Claim 12
Dependent Claim 13 words
A solar cell of claim 6 wherein said junction comprises a p-n junction.
Claim 13
Dependent Claim 13 words
A solar cell of claim 6 wherein said junction comprises a p-i-n junction.
Claim 14
Dependent Claim 11 words
A solar cell of claim 6 wherein said substrate comprises glass.
Claim 15
Dependent Claim 13 words
A solar cell of claim 6 wherein said substrate comprises a polymeric film.
Claim 16
Dependent Claim 19 words
A solar cell of claim 4, 6, 7, 9 or 13 wherein said solar cell has a light-trapping structure.
Claim 17
Dependent Claim 13 words
A solar cell of claim 14 wherein said back surface reflector comprises silver.

References Cited (Backward Citations)

DE2715471A1 Cited
US4376228A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-04-29 1988-10-29 1989-04-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-04-29 1992-10-29 1993-04-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-04-29 1996-10-29 1997-04-30 $7700.00 Window Closed / Lapsed

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