US4514489A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photolithography process
Assignee: Motorola Solutions Inc
•
Filing: 1983-09-01
•
Granted: 1985-04-30
•
Expires: 2003-09-01
Abstract
Abstract An improved photolithography process is disclosed wherein photoresist masks are treated to reduce the sticking of photoresist to the mask. In many photolithography processes, a photoresist layer is exposed through a photoresist mask having an opaque patterned layer on a surface of the mask. To prevent adhesion of the photoresist to the mask surface when the mask and photoresist are brought into contact, the mask surface is first treated in a fluorine plasma.
Inventors
- 👤 Carlos N. Garcia
- 👤 Bryan C. Rigg
- 👤 Sally A. Tanner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:03
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
45 words
In a process for fabricating a semiconductor device including one or more photolithographic patterning steps utilizing a patterned photomask having an opaque pattern on a surface thereof, the improvement comprising: treating the surface of said photomask in a mixture of fluorinated carbon and oxygen plasma.
Claim 2
Dependent Claim
45 words
In a process for fabricating a semiconductor device including one or more photolithographic patterning steps utilizing a patterned photomask having an opaque pattern on a surface thereof, the improvement comprising: treating the surface of said photomask in a mixture of fluorinated carbon and oxygen plasma.
Claim 3
Dependent Claim
18 words
The improvement of claim 1 wherein said plasma comprises a mixture of CF 4 and O 2 .
Claim 4
Dependent Claim
26 words
The improvement of claim 1 wherein said step of treating comprises subjecting said surface to a mixture of fluorinated carbon and oxygen plasma for 2-15 minutes.
Claim 5
Dependent Claim
95 words
A process for fabricating a semiconductor device including a semiconductor wafer and a layer on said wafer to be patterned, the process comprising the steps of: providing a photomask including a transparent plate having an opaque pattern on a surface thereof; exposing said opaque pattern to a mixture of fluorocarbon and oxygen plasma; forming a layer of photoresist on said layer; contacting said photomask and said layer of photoresist; and exposing said layer of photoresist through said photomask and separating said photomask and said layer with substantially none of said layer sticking to said photomask.
Claim 6
Dependent Claim
95 words
A process for fabricating a semiconductor device including a semiconductor wafer and a layer on said wafer to be patterned, the process comprising the steps of: providing a photomask including a transparent plate having an opaque pattern on a surface thereof; exposing said opaque pattern to a mixture of fluorocarbon and oxygen plasma; forming a layer of photoresist on said layer; contacting said photomask and said layer of photoresist; and exposing said layer of photoresist through said photomask and separating said photomask and said layer with substantially none of said layer sticking to said photomask.
Claim 7
Dependent Claim
43 words
An improved photolithography process wherein the same photomask is used to sequentially process, in the same manner, a plurality of identical wafers, the improvement which comprises: treating said photomask in a mixture of fluorocarbon and oxygen plasma before contacting a layer of photoresist.
Claim 8
Dependent Claim
43 words
An improved photolithography process wherein the same photomask is used to sequentially process, in the same manner, a plurality of identical wafers, the improvement which comprises: treating said photomask in a mixture of fluorocarbon and oxygen plasma before contacting a layer of photoresist.
References Cited (Backward Citations)
US3600243A
Cited
US3892900A
Cited
JPS5382271A
Cited
JPS53117973A
Cited
JPS53122427A
Cited
JPS5588057A
Cited
JPS5599932A
Cited
JPS5632143A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-29 | 1988-10-29 | 1989-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-29 | 1992-10-29 | 1993-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-29 | 1996-10-29 | 1997-04-30 | $7700.00 | Window Closed / Lapsed |