US4512864A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low resistance indium oxide films
Assignee: PPG Industries Ohio Inc
•
Filing: 1983-11-30
•
Granted: 1985-04-23
•
Expires: 2003-11-30
Abstract
Abstract A method for depositing an indium oxide film by magnetron sputtering is disclosed wherein the resistance of the film is lowered by maintaining the substrate at an elevated temperature during the magnetron sputtering process.
Inventors
- 👤 F. Howard Gillery
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:57
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541; C23C14/06; C23C14/08; C23C14/086; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12597
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
86 words
In a method for sputtering a metal oxide containing film onto a substrate surface from a cathode comprising a metal selected from the group consisting of indium, tin and mixtures thereof, in which a magnetic field is formed adjacent the cathode sputtering surface, the improvement which comprises maintaining the substrate at a temperature sufficiently higher than the ambient temperature during sputtering to produce a metal oxide containing film with a resistance significantly lower than that of a film similarly deposited on a substrate at ambient temperature.
Claim 2
Dependent Claim
86 words
In a method for sputtering a metal oxide containing film onto a substrate surface from a cathode comprising a metal selected from the group consisting of indium, tin and mixtures thereof, in which a magnetic field is formed adjacent the cathode sputtering surface, the improvement which comprises maintaining the substrate at a temperature sufficiently higher than the ambient temperature during sputtering to produce a metal oxide containing film with a resistance significantly lower than that of a film similarly deposited on a substrate at ambient temperature.
Claim 3
Dependent Claim
21 words
The improved method according to claim 1, wherein the substrate is maintained at a temperature of at least about 90° C.
Claim 4
Dependent Claim
21 words
The improved method according to claim 2, wherein the substrate is maintained at a temperature of at least about 200° C.
Claim 5
Dependent Claim
12 words
The improved method according to claim 3, wherein the substrate is glass.
Claim 6
Dependent Claim
22 words
The improved method according to claim 4, wherein the cathode is an alloy comprising about 90 percent indium and 10 percent tin.
Claim 7
Dependent Claim
29 words
The improved method according to claim 5, wherein the film is formed to a thickness of about 300 Angstroms and has a resistance of about 100 ohms per square.
Claim 8
Dependent Claim
32 words
The improved method according to claim 5, wherein the film is formed to a thickness exhibiting first order red interference effects and has a resistance less than about 20 ohms per square.
Claim 9
Dependent Claim
32 words
The improved method according to claim 5, wherein the film is formed to a thickness exhibiting fourth order red interference effects and has a resistance less than about 10 ohms per square.
Claim 10
Dependent Claim
19 words
The improved method according to claim 8, wherein the film has a resistance of about 5 ohms per square.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-22 | 1988-10-22 | 1989-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-22 | 1992-10-22 | 1993-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-22 | 1996-10-22 | 1997-04-23 | $7700.00 | Window Closed / Lapsed |