Memory cell having a double gate field effect transistor and a method for its operation

Claim 2

In a transistor memory cell of the type in which a semiconductor body of a first conductivity type has a boundary surface, in which a semiconductor source region of an opposite second conductivity type and a semiconductor drain region of the second conductivity type are located spaced apart in the semiconductor body at the boundary surface and adapted to receive selected operating potentials for writing, reading and erasing, in which a first gate electrode is carried insulated over a first portion of the boundary surface and thereby defines second portions of the boundary surface which extend between the first portion and the source and drain regions, the first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor, and in which selection means connected in circuit with the transistor is operable in response to selection signals to prepare the memory cell for writing, reading and erasing, the improvement wherein the selection means comprises: a second gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 3

A single transistor memory cell comprising: a semiconductor body of a first conductivity type and having a boundary surface; a semiconductor source region of an opposite second conductivity type and a semiconductor drain region of the second conductivity type located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effeotive to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 4

A single transistor memory cell comprising: a semiconductor body of a first conductivity type and having a boundary surface; a semiconductor source region of an opposite second conductivity type and a semiconductor drain region of the second conductivity type located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effeotive to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 5

The single transistor memory cell of claim 2, wherein: said first conductivity type is p-conductivity.

Claim 6

The single transistor memory cell of claim 2, wherein: said second conductivity type is n + -conductivity.

Claim 7

The single transistor memory cell of claim 2, and further comprising: polycrystalline silicon constituting said first gate electrode.

Claim 8

The single transistor memory cell of claim 2, and further comprising: polycrystalline silicon constituting said second gate electrode.

Claim 9

A single transistor memory cell comprising: a p-conductivity semiconductor body having a boundary surface; an n + -conductivity semiconductor source region and an n + -conductivity semiconductor drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 10

A single transistor memory cell comprising: a p-conductivity semiconductor body having a boundary surface; an n + -conductivity semiconductor source region and an n + -conductivity semiconductor drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 11

A single transistor memory cell comprising: a p-doped silicon body having a boundary surface; an n + -doped source region and an n + -doped drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first polycrystalline silicon gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second polycrystalline silicon gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 12

A single transistor memory cell comprising: a p-doped silicon body having a boundary surface; an n + -doped source region and an n + -doped drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a first polycrystalline silicon gate electrode carried insulated over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; and a second polycrystalline silicon gate electrode carried insulated over said first gate electrode and extending over said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 13

A single transistor memory cell comprising: a p-doped silicon body having a boundary surface; an n + -doped source region and an n + -doped drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a tunnel oxide layer carried on and covering said boundary surface, a silicon nitride layer carried on said tunnel oxide layer and an oxynitride layer carried on said silicon nitride layer; a first polycrystalline silicon gate electrode carried on said oxynitride layer over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; an insulating layer covering said first polycrystalline silicon gate electrode; and a second polycrystalline silicon gate electrode carried on said insulating layer over said first gate electrode and extending over said tunnel oxide, silicon nitride and oxynitride layers above said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 14

A single transistor memory cell comprising: a p-doped silicon body having a boundary surface; an n + -doped source region and an n + -doped drain region located spaced apart in said semiconductor body at said boundary surface and adapted to receive selected operating potentials for writing, reading and erasing; a tunnel oxide layer carried on and covering said boundary surface, a silicon nitride layer carried on said tunnel oxide layer and an oxynitride layer carried on said silicon nitride layer; a first polycrystalline silicon gate electrode carried on said oxynitride layer over a first portion of said boundary surface and thereby defining second portions of said boundary surface which extend between said first portion and said source and drain regions, said first gate electrode adapted for connection to a bit line to receive selected potentials for writing, reading and erasing, including potentials effective to produce an electrical charge shift of the threshold voltage of the transistor; an insulating layer covering said first polycrystalline silicon gate electrode; and a second polycrystalline silicon gate electrode carried on said insulating layer over said first gate electrode and extending over said tunnel oxide, silicon nitride and oxynitride layers above said second portions of said boundary surface and adapted for connection to a selection line to receive a selection potential effective to create inversion layers in said semiconductor body below said second portions of said boundary surface to effectively extend said source and drain regions towards said first gate electrode and prepare the transistor for writing, reading and erasing.

Claim 15

A semiconductor memory comprising: a plurality of memory cells arranged in an array of columns and rows; a plurality of control lines for receiving signals for effecting writing, reading and erasing, including a source line, a drain line and a bit line for each column and a selection line for each row; each of said memory cells comprising a semiconductor body of a first conductivity type including a boundary surface; a source of an opposite, second conductivity type and a drain of the second conductivity type located spaced apart in said semiconductor body at said boundary surface and connected to respective source and drain lines; a first gate connected to a respective bit line and carried insulated over said boundary surface between said source and drain to define a first portion of said boundary surface therebelow and second portions which extend between said first portion and said source and said drain; and a second gate connected to a respective selection line and carried insulated over said first gate and extending over said second portions of said boundary surface, said second gate responsive to a selection potential to effectively extend said source and said drain towards said first gate to prepare said memory cell for writing, reading and erasing.

Claim 16

A semiconductor memory comprising: a plurality of memory cells arranged in an array of columns and rows; a plurality of control lines for receiving signals for effecting writing, reading and erasing, including a source line, a drain line and a bit line for each column and a selection line for each row; each of said memory cells comprising a semiconductor body of a first conductivity type including a boundary surface; a source of an opposite, second conductivity type and a drain of the second conductivity type located spaced apart in said semiconductor body at said boundary surface and connected to respective source and drain lines; a first gate connected to a respective bit line and carried insulated over said boundary surface between said source and drain to define a first portion of said boundary surface therebelow and second portions which extend between said first portion and said source and said drain; and a second gate connected to a respective selection line and carried insulated over said first gate and extending over said second portions of said boundary surface, said second gate responsive to a selection potential to effectively extend said source and said drain towards said first gate to prepare said memory cell for writing, reading and erasing.