US4510231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a magnetic bubble memory
Assignee: Hitachi Ltd
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Filing: 1983-01-31
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Granted: 1985-04-09
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Expires: 2003-01-31
Abstract
Abstract A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.
Inventors
- 👤 Masatoshi Takeshita
- 👤 Naoki Kodama
- 👤 Ryo Suzuki
- 👤 Teruaki Takeuchi
- 👤 Yutaka Sugita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:02
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/32; H01F41/34
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
157 words
A method for manufacturing a magnetic bubble memory comprising the steps of: (1) depositing a conducting film on a magnetic film capable of holding a magnetic bubble, said conducting film being suitable as a mask against ions to be implanted on said magnetic film; (2) forming a photoresist pattern of a desired pattern on said conducting film; (3) removing the exposed area of said conducting film form a pattern of conducting film and expose a patterned area of magnetic film; (4) removing said photoresist pattern; (5) covering a portin of the exposed patterned area of magnetic film and a portion of said pattern of conducting film adjacent said patterned area of magnetic film with a mask film suitable against ions to be implanted in said magnetic film; and (6) implanting ions into the uncovered patterned area of said magnetic film to form a magnetic bubble propagation pattern while using the uncovered conducting film pattern as a mask.
Claim 2
Independent Claim
157 words
A method for manufacturing a magnetic bubble memory comprising the steps of: (1) depositing a conducting film on a magnetic film capable of holding a magnetic bubble, said conducting film being suitable as a mask against ions to be implanted on said magnetic film; (2) forming a photoresist pattern of a desired pattern on said conducting film; (3) removing the exposed area of said conducting film form a pattern of conducting film and expose a patterned area of magnetic film; (4) removing said photoresist pattern; (5) covering a portin of the exposed patterned area of magnetic film and a portion of said pattern of conducting film adjacent said patterned area of magnetic film with a mask film suitable against ions to be implanted in said magnetic film; and (6) implanting ions into the uncovered patterned area of said magnetic film to form a magnetic bubble propagation pattern while using the uncovered conducting film pattern as a mask.
Claim 3
Dependent Claim
36 words
A method for manufacturing a magnetic bubble memory according to claim 1 wherein the deposition of said conducting film in said step (1) is effected after an insulative film has been deposited on said magnetic film.
Claim 4
Dependent Claim
30 words
A method for manufacturing a magnetic bubble memory according to claim 2 wherein the ion implantation in said step (6) is effected on an exposed surface of said insulative film.
Claim 5
Dependent Claim
26 words
A method for manufacturing a magnetic bubble memory according to claim 2 wherein the ion implantation in said step (6) is effected through said insulative film.
Claim 6
Dependent Claim
33 words
A method for manufacturing a magnetic bubble memory according to claim 1 wherein said conducting film is selected from a group consisting of Au/Mo dual layer, Mo/Si dual layer and Al-Cu alloy layer.
Claim 7
Dependent Claim
33 words
A method for manufacturing a magnetic bubble memory according to claim 2 wherein said conducting film is selected from a group consisting of Au/Mo dual layer, Mo/Si dual layer and Al-Cu alloy layer.
Claim 8
Dependent Claim
33 words
A method for manufacturing a magnetic bubble memory according to claim 3 wherein said conducting film is selected from a group consisting of Au/Mo dual layer, Mo/Si dual layer and Al-Cu alloy layer.
Claim 9
Dependent Claim
33 words
A method for manufacturing a magnetic bubble memory according to claim 4 wherein said conducting film is selected from a group consisting of Au/Mo dual layer, Mo/Si dual layer and Al-Cu alloy layer.
Claim 10
Dependent Claim
22 words
A method for manufacturing a magnetic bubble memory according to claim 1 wherein said magnetic film is a a magnetic garnet film.
Claim 11
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 2 wherein said magnetic film is a magnetic garnet film.
Claim 12
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 3 wherein said magnetic film is a magnetic garnet film.
Claim 13
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 4 wherein said magnetic film is a magnetic garnet film.
Claim 14
Dependent Claim
29 words
A method for manufacturing a magnetic bubble memory according to claim 9 wherein said magnetic garnet film is formed on a (111) plane of a non-magnetic single crystal substrate.
Claim 15
Dependent Claim
29 words
A method for manufacturing a magnetic bubble memory according to claim 10 wherein said magnetic garnet film is formed on a (111) plane of a non-magnetic single crystal substrate.
Claim 16
Dependent Claim
29 words
A method for manufacturing a magnetic bubble memory according to claim 11 wherein said magnetic garnet film is formed on a (111) plane of a non-magnetic single crystal substrate.
Claim 17
Dependent Claim
29 words
A method for manufacturing a magnetic bubble memory according to claim 12 wherein said magnetic garnet film is formed on a (111) plane of a non-magnetic single crystal substrate.
Claim 18
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 5 wherein said magnetic film is a magnetic garnet film.
Claim 19
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 6 wherein said magnetic film is a magnetic garnet film.
Claim 20
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 7 wherein said magnetic film is a magnetic garnet film.
Claim 21
Dependent Claim
21 words
A method for manufacturing a magnetic bubble memory according to claim 8 wherein said magnetic film is a magnetic garnet film.
Claim 22
Dependent Claim
29 words
A method for manufacturing a magnetic bubble memory according to claim 17 wherein said magnetic garnet film is formed on a (111) plane of a non-magnetic single crystal substrate.
References Cited (Backward Citations)
US4098917A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-08 | 1988-10-08 | 1989-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-08 | 1992-10-08 | 1993-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-08 | 1996-10-08 | 1997-04-09 | $7700.00 | Window Closed / Lapsed |