US4509068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thyristor with controllable emitter short circuits and trigger amplification
Assignee: Siemens AG
•
Filing: 1982-08-30
•
Granted: 1985-04-02
•
Expires: 2002-08-30
Abstract
Abstract A power thyristor has controllable emitter short circuits in the form of MIS transistors which are conductive in the blocking condition of the thyristor and are switched off during the trigger operation. The ignition of the thyristor, including the control of the emitter short circuits, is accomplished in a simple manner from a gate trigger current pulse. To this end, a npn lateral transistor is integrated on the cathode side of the thyristor, the collector of the lateral transistor being connected to the gates of the MIS transistors, with its base consisting of a sub-region of the p-base and its emitter consisting of an edge region of the n-emitter of the thyristor. The gates of the MIS transistors are connected to the anode of the thyristor over a charging resistor.
Inventors
- 👤 Michael Stoisiek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:14
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/221; H10D84/00; H10D84/101; H10D84/131; H10D84/135; H10D84/138
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
145 words
A thyristor comprising a semiconductor body having an n-emitter contacted by a cathode, and an adjacent p-base, and a p-emitter contacted by an anode, and an adjacent n-base, and with a plurality of emitter short circuits disposed at a boundary surface of the semiconductor body comprising MIS transistors, each MIS transistor comprising an edge region of the n(p)-emitter, a n(p)-conductive semiconductor region inserted in the p(n)-base and conductively connected thereto, and a region of the p(n)-base covered by a gate, a lateral transistor provided at the boundary surface, said lateral transistor comprising an edge region of the n(p)-emitter, a further n(p)-conductive semiconductor region inserted in the p(n)-base and connected to the gates of the MIS transistors, and comprising a sub-region of the p(n)-base lying therebetween; said sub-region having a trigger electrode; and means for connecting the gates of the MIS transistors to a positive voltage.
Claim 2
Dependent Claim
145 words
A thyristor comprising a semiconductor body having an n-emitter contacted by a cathode, and an adjacent p-base, and a p-emitter contacted by an anode, and an adjacent n-base, and with a plurality of emitter short circuits disposed at a boundary surface of the semiconductor body comprising MIS transistors, each MIS transistor comprising an edge region of the n(p)-emitter, a n(p)-conductive semiconductor region inserted in the p(n)-base and conductively connected thereto, and a region of the p(n)-base covered by a gate, a lateral transistor provided at the boundary surface, said lateral transistor comprising an edge region of the n(p)-emitter, a further n(p)-conductive semiconductor region inserted in the p(n)-base and connected to the gates of the MIS transistors, and comprising a sub-region of the p(n)-base lying therebetween; said sub-region having a trigger electrode; and means for connecting the gates of the MIS transistors to a positive voltage.
Claim 3
Dependent Claim
21 words
The thyristor according to claim 1, including means for connecting the gates of the MIS transistors to an external voltage source.
Claim 4
Dependent Claim
19 words
The thyristor according to claim 1, including means for connecting the gates of the MIS transistors to the anode.
Claim 5
Dependent Claim
30 words
The thyristor according to claim 3, including means for connecting the gates of the MIS transistors to the anode over the series connection of a charging resistor and a diode.
Claim 6
Dependent Claim
27 words
The thyristor according to one of the claims 1 through 4, including means for connecting the gates of the MIS transistors to the cathode over a capacitor.
Claim 7
Dependent Claim
32 words
The thyristor according to one of claims 1-4, including means for connecting a further diode to the pn junction between the p(n)-base and the further n(p)-conductive semiconductor region inserted in the p(n)-base.
Claim 8
Dependent Claim
15 words
The thyristor according to claim 6, wherein said further diode is integrated in the p(n)-base.
References Cited (Backward Citations)
US4224634A
Cited
US4244000A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-01 | 1988-10-01 | 1989-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-01 | 1992-10-01 | 1993-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-01 | 1996-10-01 | 1997-04-02 | $7700.00 | Window Closed / Lapsed |